Patents by Inventor Isabelle Bisotto

Isabelle Bisotto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8852997
    Abstract: A method for purifying an n-type ZnO and/or ZnMgO substrate to reduce or eliminate the residual extrinsic impurities including introducing a reactive species having strong chemical affinity for at least one of the residual extrinsic impurities, and/or being capable of creating crystalline defects, is introduced in at least one region of the substrate, the reactive species being P, and whereby at least one getter region capable of trapping the said residual extrinsic impurities and/or in which the residual extrinsic impurities are trapped is created in the substrate; then annealing the substrate to cause diffusion of the residual extrinsic impurities towards the getter region and/or to outside the getter region. A method for preparing a p-doped ZnO and/or ZnMgO substrate comprising purifying an n-type ZnO and/or ZnMgO substrate using the above purification method in which one or more reactive species are used not limited to phosphorus alone.
    Type: Grant
    Filed: June 1, 2011
    Date of Patent: October 7, 2014
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Isabelle Bisotto, Guy Feuillet
  • Publication number: 20130137214
    Abstract: A method for purifying an n-type ZnO and/or ZnMgO substrate to reduce or eliminate the residual extrinsic impurities of the substrate with a view to p-doping of at least are part of the substrate, wherein a reactive species having strong chemical affinity for at least one of the residual extrinsic impurities, and/or being capable of creating crystalline defects, is introduced in at least one region of the substrate, the said reactive species being P, and whereby at least one region called a getter region capable of trapping the said residual extrinsic impurities and/or in which the residual extrinsic impurities are trapped is created in the substrate; annealing of the substrate is then carried out to cause diffusion of the residual extrinsic impurities towards the getter region and/or to outside the getter region, preferably towards at least one surface of the substrate.
    Type: Application
    Filed: June 1, 2011
    Publication date: May 30, 2013
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Isabelle Bisotto, Guy Feuillet