Abstract: Approaches presented herein provide for the emission of a selected wavelength of light from a laser device, such as a transverse-coupled cavity, vertical cavity surface-emitting laser (TCC VCSEL) devices, through use of one or more mode filters. Feedback from at least one secondary cavity can be used to overcome intrinsic bandwidth limitations of a VCSEL device, where the performance can be strongly dependent on feedback parameters such as strength, phase, and time constant. The mode filter can be used to stabilize and provide controllability of the wavelength for single mode operation. The TCC VCSEL may have one or more intracavity implantations to confine current and one or more contacts configured to reduce electrical resistance.

Abstract: In one embodiment, a pluggable clock module apparatus includes a module housing, a physical interface to be plugged into a network port of a network device, and an oscillator disposed in the module housing, the oscillator being to generate a clock signal. In another embodiment, a system includes a network device including network ports and a pluggable clock module apparatus including a physical interface to be plugged into one of the network ports. The pluggable clock module apparatus is to provide the clock signal, or a network signal based on the clock signal, to the network device. The network device is to receive the clock signal, or recover the clock from the network signal, and to provide the clock signal to other devices in a network.

Abstract: An electrical component includes at least one conducting trace configured for conducting radiofrequency (RF) signals. The at least one conducting trace has a broadband conductive material applied onto one or more specific locations along the at least one conducting trace. In certain embodiments, the one or more specific locations are locations detected or anticipated to have surface roughness. In certain embodiments, the presence of the broadband conductive material improves the signal integrity of RF signals conducted along the conducting trace (compared to if the broadband conductive material was not present). Certain embodiments provide methods for fabricating such electrical components.

Abstract: Frequency comb generators are provided that include at least one of a closed loop formed of gain material, or a gain material section divided into two or more segments by one or more dividers, wherein at least one of the two or more segments is a tapered segment. A frequency comb generator is optically coupled to an output waveguide for providing frequency comb pulses generated by the frequency comb generator to one or more downstream elements.

Abstract: A frequency comb generator is provided. The frequency comb generator includes an optical cavity having gain material disposed therein; and two or more waveguide gratings formed sequentially in the optical cavity. The two or more waveguide gratings are configured to control the emission spectrum of the frequency comb generator.

Abstract: Systems and methods are described herein for an electro-absorption modulator (EAM) device. An example EAM device comprises an optical waveguide comprising a waveguide core configured to facilitate a propagation of an optical signal therethrough; a segmented traveling wave electrode structure comprising electrode segments disposed on the optical waveguide; and an electrical transmission line operatively coupled to the electrode segments via conducting bridges, wherein the electrical transmission line is configured to facilitate a propagation of an electrical signal therethrough, wherein the electrode segments are configured to overcome bandwidth and extinction ratio constraints of a lumped EAM.

Abstract: Systems, devices, and methods for transceiver resiliency in embedded optical modules are provided. An example optical device includes an optical communication medium, a primary optical component optically coupled with the optical communication medium, and a redundant optical component optically coupled with the optical communication medium. The optical device also includes an optical switching element coupled with the primary optical component and the redundant optical component. The optical switching element selectively enables operation of the primary optical component and the redundant optical component, such as in response to operational characteristics of the primary optical component. The optical device may be embedded within an optical module.

Abstract: Systems and methods herein are for dual purpose cooling for a computer module that may include a device cooling loop which may be configured to cool computing features of the computer module. The systems and methods herein may include an interconnect cooling loop, provided together with the device cooling loop, where the interconnect cooling loop may be configured to reduce, by at least a predetermined threshold, electrical resistance of interconnect features of the computer module.

Abstract: High bandwidth (e.g., >100 GHz) modulators and methods of fabricating such are provided. An EAM comprises a waveguide mesa comprising a continuous multi-quantum well (MQW) layer; a plurality of electrode segments disposed on the waveguide mesa; and a microstrip transmission line disposed on an insulating material layer and in electrical communication with the plurality of electrode segments via conducting bridges. The waveguide mesa comprises alternating active sections and passive sections. An electrode segment of the plurality of electrodes is disposed on a respective one of the active sections. Portions of the continuous MQW layer disposed in each of the active sections having an energy gap defining an active energy gap value. Portions of the continuous MQW layer disposed in each of the passive sections having an energy gap defining an passive energy gap value. The active energy gap value is less than the passive energy gap value.

Abstract: Some embodiments of the present disclosure are directed to a nanomaterial-based semiconductor device and method of manufacturing the same. Integration of nanostructures in a semiconductor layer may reduce the size of the semiconductor devices and may lower the applied voltage, thereby reducing heating of the structure. Further, the solution may simplify the manufacturing process by eliminating the need to dope the semiconductor layer and may reduce the size of the semiconductor devices. Moreover, embedding the nanostructures in the semiconductor layer may enable precise control of the doping of the semiconductor layer.

Abstract: Some embodiments of the present disclosure are directed to a laser design that provides side-mode suppression that is separately configurable from polarization-mode suppression, such that each may be independently optimized to simultaneously provide a high side-mode suppression ratio and a high polarization-mode suppression ratio. For example, a laser (e.g., a VCSEL) may include an active region configured to emit light, an aperture defining an optical axis, a first element positioned along the optical axis on a first side of the active region, and a second element positioned along the optical axis on a second side of the active region opposite the first side of the active region. The first element may be configured to increase a side-mode suppression ratio of the laser, and the second element may be configured to increase a polarization-mode suppression ratio of the laser.

Abstract: Systems and methods are described for implementing quantum key distribution (QKD) in a data center environment. An example quantum transmitter includes an on-chip semiconductor laser as a light source to generate photons, quantum state preparation circuitry configured to receive a sequence of bits, map each bit to a quantum state and a measurement basis, and encode the quantum state of each bit onto a corresponding photon to generate a qubit, and a quantum channel interface configured to transmit the qubit to a quantum receiver via a quantum communication channel. An example quantum receiver includes a quantum channel interface to receive qubits, a silicon-based single photon avalanche diode (SPAD) as a photon detector for qubit detection, and quantum state measurement circuitry that is configured to decode the state of each qubit based on a selected measurement basis.

Abstract: Approaches presented herein provide for the reduction of unwanted electrical reflections caused by impedance mismatches at an input of an optical modulator device, such as at the interface between a (radio frequency) signal source and an electro-absorption modulated laser (EML). Reflections can be reduced though use of one or more electrical filters, such as resistor-capacitor (RC) filters, that can be placed at the input of the EML device to reduce reflections through impedance matching at that location, while maintaining the efficiency and bandwidth of the modulator for high bandwidth transmission. Such a filter can be used with a single ended or differential EML device, and can be integrated on an EML chip or added as discrete components on a chip carrier on which the EML chip is supported.

Abstract: Systems and methods are directed localized heating for a modulator incorporated into an electro-absorption modulated laser (EML). A heater may be positioned proximate one or more portions of the modulator to apply heat energy to the modulator responsive to an input. The heater may be configured to apply a dissipation of heat so that the modulator operates within a selected temperature range. The modulator and/or the heater may be thermally insulated, at least in part, from a substrate associated with the EML by one or more low thermal conductivity layers arranged between the modulator and a substrate of the EML.

Abstract: Bi-directional quantum interconnects are provided that include a first communication module and a second communication module. The first communication module includes a first quantum transmitter and a first quantum receiver, and the second communication module includes a second quantum transmitter and a second quantum receiver. The example interconnect further includes a first communication medium communicably coupling the first communication module and the second communication module such that communication is provided between the first quantum transmitter and the second quantum receiver and between the second quantum transmitter and the first quantum receiver via the first communication medium. The first quantum transmitter and the second quantum transmitter generate qubits having first and second quantum characteristics, respectively, to allow for bi-directional quantum communication over a common channel.

Abstract: Methods for forming an at least partially oxidized confinement layer of a semiconductor device and corresponding semiconductor devices are provided. The method comprises forming two or more layers of a semiconductor device on a substrate. The layers include an exposed layer and a to-be-oxidized layer. The to-be-oxidized layer is disposed between the substrate and the exposed layer. The method further comprises etching, using a masking process, a pattern of holes that extend through the exposed layer at least to a first surface of the to-be-oxidized layer. Each hole of the pattern of holes extends in a direction that is transverse to a level plane that is parallel to the first surface of the to-be-oxidized layer. The method further comprises oxidizing the to-be-oxidized layer through the pattern of holes by exposing the two or more layers of the semiconductor device to an oxidizing gas to form a confinement layer.

Abstract: Systems and methods are described herein for an electro-absorption modulator (EAM) device. An example EAM device comprises an optical waveguide comprising a waveguide core configured to facilitate propagation and modulation of an optical signal therethrough; a segmented structure comprising diode segments disposed on the waveguide; and an electrical transmission line operatively coupled to the diode segments. The electrical transmission line is configured to facilitate propagation of an electrical signal therethrough. The electrical transmission line includes a first transmission line rail and a second transmission line, where a first subset of diode segments is operatively coupled to the first transmission line rail and a ground rail, and a second subset of diode segments is operatively coupled to the second transmission line and the ground rail. The diode segments from the first subset are disposed alternately with the diode segments from the second subset.

Abstract: Processes and devices for continuous compositional grading in photodetectors and electro-absorption modulators (EAM) are provided. An example photodetector includes a multi-layered structure comprising a collector region, an absorber region, a grading layer, and a peripheral layer, all aligned along a detection axis. The grading layer, positioned adjacent to the absorber region, includes multiple sub-layers that define a continuous compositional grading to facilitate smooth carrier transport and reduce recombination. Similarly, an example electro-absorption modulator (EAM) device includes a waveguide mesa formed on a semiconductor substrate, comprising a multi-quantum well (MQW) core layer, upper and lower near-core cladding layers, and upper and lower central cladding layers. The EAM device features both upper and lower grading layers, each positioned between the near-core cladding layers and the adjacent central cladding layers.

Abstract: Some embodiments of the present invention are directed to a tunnel junction for a vertical-cavity surface-emitting laser (VCSEL) that controls optical and current confinement within the VCSEL. The tunnel junction may define an electrical current injection area and an optical aperture for the VCSEL and may include a heavily p++ doped p-type material and a heavily n++ doped n-type material disposed on the p-type material. At least a portion of the outer edges of the n-type material are etched such that the n-type material has a cross-sectional area that is less than a cross-sectional area of the p-type material. By removing a portion of n-type material near the outer edge of the tunnel junction, a sloped effective refractive index is formed, and an effective area of the tunnel junction is changed, which increases the overlap of the current density and the optical field of the VCSEL.

Abstract: Some embodiments of the present invention are directed to a multi-layer oxide aperture for a VCSEL. The oxide aperture may include multiple layers having different aluminum fractions that may reduce a spectral width of the VCSEL while maintaining longitudinal confinement. The oxide aperture may be formed from a mirror layer of the VCSEL proximate an active region. The mirror layer may include first epitaxial layers closest to the active region having a first aluminum fraction selected to longitudinally confine the optical field of the VCSEL. The mirror layer may include second epitaxial layers that have a second aluminum fraction low enough to prevent substantial oxidation of the second epitaxial layers. Additionally, the mirror layer may include third epitaxial layers that have a third aluminum fraction greater than the first and second aluminum fractions. The third epitaxial layers may be oxidized to form the oxide aperture.