Abstract: A temperature control system is used for controlling a temperature of a control target to a target temperature that changes with lapse of time. The system includes: a first adjustment apparatus that includes a first tank that stores a first heat transfer medium, adjusts the temperature of the first heat transfer medium to a first set temperature, and supplies the temperature-adjusted first heat transfer medium; a first circulation circuit through which the first heat transfer medium flows from the first adjustment apparatus to a first flow-through path and returns to the first adjustment apparatus; an adjustment section that adjusts an amount of heat supplied from the first flow-through path to the control target; a memory that stores a relation between the lapse of time and the target temperature; and a controller.

Abstract: A temperature control system is used for controlling a temperature of a control target. The system includes: a first circulation circuit through which a first heat transfer medium circulates; a second circulation circuit that is independent of the first circulation circuit and through which a second heat transfer medium circulates; and a third circulation circuit that is independent of the first circulation circuit and the second circulation circuit and through which a third heat transfer medium circulates. The third heat transfer medium has a usable temperature range wider than usable temperature ranges of the first heat transfer medium and the second heat transfer medium.

Abstract: A temperature control system is used for controlling a temperature of a control target. The system includes: a first circulation circuit through which a first heat transfer medium circulates; a second circulation circuit that is independent of the first circulation circuit and through which a second heat transfer medium circulates; and a third circulation circuit that is independent of the first circulation circuit and the second circulation circuit and through which a third heat transfer medium circulates. The third heat transfer medium has a usable temperature range wider than usable temperature ranges of the first heat transfer medium and the second heat transfer medium.

Abstract: A cooling system includes: a first cooling apparatus electrically driven to supply a first heat transfer medium cooled to a first set temperature or lower; a plurality of second cooling apparatuses each of which includes a heat exchanger that exchanges heat between the first heat transfer medium supplied from the first cooling apparatus and a second heat transfer medium, and is electrically driven to supply a third heat transfer medium cooled to a second set temperature or lower, the second set temperature being changed individually with lapse of time; and a processor that obtains second set temperatures of the second cooling apparatuses and sets the first set temperature based on the obtained second set temperatures.

Abstract: A temperature control system is used for controlling a temperature of a control target to a target temperature that changes with lapse of time. The system includes: a first adjustment apparatus that includes a first tank that stores a first heat transfer medium, adjusts the temperature of the first heat transfer medium to a first set temperature, and supplies the temperature-adjusted first heat transfer medium; a first circulation circuit through which the first heat transfer medium flows from the first adjustment apparatus to a first flow-through path and returns to the first adjustment apparatus; an adjustment section that adjusts an amount of heat supplied from the first flow-through path to the control target; a memory that stores a relation between the lapse of time and the target temperature; and a controller.

Abstract: A cooling system includes: a first cooling apparatus electrically driven to supply a first heat transfer medium cooled to a first set temperature or lower; a plurality of second cooling apparatuses each of which includes a heat exchanger that exchanges heat between the first heat transfer medium supplied from the first cooling apparatus and a second heat transfer medium, and is electrically driven to supply a third heat transfer medium cooled to a second set temperature or lower, the second set temperature being changed individually with lapse of time; and a processor that obtains second set temperatures of the second cooling apparatuses and sets the first set temperature based on the obtained second set temperatures.

Abstract: A temperature control system is used for controlling a temperature of a control target. The system includes: a first circulation circuit through which a first heat transfer medium circulates; a second circulation circuit that is independent of the first circulation circuit and through which a second heat transfer medium circulates; and a third circulation circuit that is independent of the first circulation circuit and the second circulation circuit and through which a third heat transfer medium circulates. The third heat transfer medium has a usable temperature range wider than usable temperature ranges of the first heat transfer medium and the second heat transfer medium.

Abstract: A temperature control system is used for controlling a temperature of a control target. The system includes: a first circulation circuit through which a first heat transfer medium circulates; a second circulation circuit that is independent of the first circulation circuit and through which a second heat transfer medium circulates; and a third circulation circuit that is independent of the first circulation circuit and the second circulation circuit and through which a third heat transfer medium circulates. The third heat transfer medium has a usable temperature range wider than usable temperature ranges of the first heat transfer medium and the second heat transfer medium.

Abstract: A semiconductor memory device includes a stacked body including a first electrode layer and a second electrode layer stacked on the first electrode layer, and first and second interconnections on a first surface of the stacked body. The first and second electrode layers have first and second end surfaces respectively in the first surface. The first interconnection is electrically connected to the first electrode layer through a first region of the first end surface; and the second interconnection is electrically connected to the second electrode layer through a second region of the second end surface. The first and second interconnections extend in a first direction on the first surface. The first and second regions are arranged in a second direction crossing the first direction with a crossing angle smaller than 90 degrees. The first region and the second region each have a boundary along the second direction.

Abstract: A semiconductor memory device includes a stacked body including a first electrode layer and a second electrode layer stacked on the first electrode layer, and first and second interconnections on a first surface of the stacked body. The first and second electrode layers have first and second end surfaces respectively in the first surface. The first interconnection is electrically connected to the first electrode layer through a first region of the first end surface; and the second interconnection is electrically connected to the second electrode layer through a second region of the second end surface. The first and second interconnections extend in a first direction on the first surface. The first and second regions are arranged in a second direction crossing the first direction with a crossing angle smaller than 90 degrees. The first region and the second region each have a boundary along the second direction.

Abstract: A magnetron plasma process apparatus comprises a process chamber, an upper electrode and a lower electrode, both located within the process chamber and extending parallel to each other, a gas-supplying system for supplying a process gas into the space between the electrodes, a high-frequency power supply for generating an electric field, to thereby to form plasma from the process gas, and magnetic field generating section for generating a magnetic field which extends through the space between the electrodes. The magnetic field generating section has a pair of permanent magnets located outside the process chamber, sandwiching the space between the electrodes. The magnetic field generated by this section extends through said space, from one of the magnets to the other thereof and substantially parallel to the electrodes, and serves to achieve magnetron plasma process on an object placed on the lower electrode.

Abstract: The invention provides a novel magnetron plasma processing apparatus comprising the following, a vacuum chamber storing an etching object, the first electrode which is provided in the vacuum chamber and holds the etching object, the second electrode which is disposed in opposition from the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means which is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit which feeds power to either of these first and second electrodes and generates discharge between these parallel electrodes. Magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.

Abstract: A method of etching oxide film on a semiconductor wafer comprising pushing the wafer against the top of lower electrode while facing it to an upper electrode, decompressing to exhaust a chamber, forming electric field between the wafer and the upper electrode under decompressed state and generating the gas plasma of process gas while supplying the process gas to an oxide-film-formed surface of the wafer through the upper electrode, introducing auxiliary gas to the peripheral portion of the wafer when the gas plasma of process gas is acting on the wafer, and controlling the etching reaction of the gas plasma relative to the peripheral portion of the wafer by auxiliary gas.

Abstract: A temperature control apparatus for single wafer etching tools comprising a cathode electrode, an isolation layer, and chuck means, respectfully, which are vertically stacked to support a wafer to be etched. A layer of thermoelectric elements is disposed between the isolation layer and the chuck means. The layer of thermoelectric elements comprises a center area closed loop of connected Peltier elements and an outer area closed loop of connected Peltier elements. The center area closed loop is coupled to a power source and is arranged to correspond to the center area of the wafer. The outer area closed loop is coupled to a power source and is arranged to correspond to the outer area of the wafer. Accordingly, the temperatures associated with each of the specific areas of the wafer are individually controlled by one of the closed loops.

Abstract: A magnetron plasma processing apparatus includes, a vacuum chamber storing an etching object, a first electrode which is provided in the vacuum chamber and holds the etching object, a second electrode which is disposed in opposition from the first electrode and parallel with the first electrode. A gas-supply unit feeding etching gas to the vacuum chamber while, a magnetic-field generating means is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit feeds power to either the first or second electrodes and generates discharge between the electrodes. The magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.

Abstract: A surface processing apparatus comprises a container provided with a first electrode and a second electrode disposed opposite to the first electrode for supporting a substrate to be processed and filled with a gas at a reduced pressure, an electric field generator for generating an electric field between the first and second electrodes, and a magnetic field generator for generating a magnetic field in the vacuum container. The magnetic field generator comprises a plurality of magnet element groups arranged in a circle around the container so as to form a ring, each of the magnet element groups having an axis directed to a center of the circle and a synthetic magnetization direction and comprising one or a plurality of magnet elements having respective magnetization directions which are synthesized to be equal to the synthetic magnetization direction of the each of the magnetic element groups.

Abstract: An electrostatic chuck for electrostatically holding a wafer is provided in a vacuum chamber formed in a magnetron plasma etching apparatus. The electrostatic chuck has a base member, a first insulating layer provided on the base member and made of polyimide, a second insulation layer made of AlN, a conductive sheet provided between first and second insulation layers, and an adhesive layer made of a thermosetting resin and adhering the first insulating layer to the second insulating layer. The wafer is placed on the second insulating layer, and power is supplied from a high voltage power supply to the conductive sheet via a feeding sheet, thereby creating static electricity and hence a coulombic force for holding the wafer on the second insulating layer.

Abstract: A plasma processing apparatus has a process chamber for receiving an article to be processed, a monitoring window forming part of the peripheral wall of the process chamber, a pressure leading-out port, gates, and a plasma generating device for forming an electric field and generating plasma in the process chamber. The process chamber is defined by the peripheral wall having a circular cross section. Members forming parts of the peripheral wall each have an inner face continuous with the surface of the peripheral wall and curved substantially at the same radius of curvature as the surface of the peripheral wall.

Abstract: A surface processing device and method for forming a magnetic field having a uniform strength over a wide area of an electrode surface to generate a uniform high density plasma over the overall surface of a wafer. The device comprises a vacuum container contains a first electrode and a second electrode disposed opposite to the first electrode; a gas feeding system for feeding a predetermined gas into the vacuum container; an evacuating system for maintaining the inside of the container at a reduced pressure; an electric field generating system for generating an electric field in a region between the first and second electrodes; and a magnetic field generating system for generating a magnetic field in the vacuum container.

Abstract: A permanent magnet magnetic circuit comprises a main magnet block having a pair of opposite outer surfaces. A pair of main magnetic poles of opposite polarities are disposed on the respective outer surfaces of the main magnet block. The main magnet block is provided with a channel defined between the pair of outer surfaces and the channel has a pair of inner surfaces corresponding to the respective outer surfaces of the main magnet block. The main magnet block is also provided with a pair of oppositely polarized compensating magnetic poles arranged on the respective inner surfaces for controlling any vector of the magnetic field directed from one of the main magnetic pole to the other main magnetic pole. A pair of adjusting magnet blocks are arranged on the respective inner surfaces to adjust the magnetic field directed from one of the main magnetic poles to the other magnetic pole.