Abstract: A method for making a solid state cathode comprises the following steps: forming an alkali free first solution comprising at least one transition metal and at least two ligands; spraying this solution onto a substrate that is heated to about 100 to 400° C. to form a first solid film containing the transition metal(s) on the substrate; forming a second solution comprising at least one alkali metal, at least one transition metal, and at least two ligands; spraying the second solution onto the first solid film on the substrate that is heated to about 100 to 400° C. to form a second solid film containing the alkali metal and at least one transition metal; and, heating to about 300 to 1000° C. in a selected atmosphere to react the first and second films to form a homogeneous cathode film. The cathode may be incorporated into a lithium or sodium ion battery.

Abstract: A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.

Abstract: A method for making ion conducting films includes the use of primary inorganic chemicals, which are preferably water soluble; formulating the solution with appropriate solvent, preferably deionized water; and spray depositing the solid electrolyte matrix on a heated substrate, preferably at 100 to 400° C. using a spray deposition system. In the case of lithium, the deposition step is then followed by lithiation or addition of lithium, then thermal processing, at temperatures preferably ranging between 100 and 500° C., to obtain a high lithium ion conducting inorganic solid state electrolyte. The method may be used for other ionic conductors to make electrolytes for various applications. The electrolyte may be incorporated into a lithium ion battery.

Abstract: A method for making ion conducting films includes the use of primary inorganic chemicals, which are preferably water soluble; formulating the solution with appropriate solvent, preferably deionized water; and spray depositing the solid electrolyte matrix on a heated substrate, preferably at 100 to 400° C. using a spray deposition system. In the case of lithium, the deposition step is then followed by lithiation or addition of lithium, then thermal processing, at temperatures preferably ranging between 100 and 500° C., to obtain a high lithium ion conducting inorganic solid state electrolyte. The method may be used for other ionic conductors to make electrolytes for various applications. The electrolyte may be incorporated into a lithium ion battery.

Abstract: A method for making ion conducting films includes the use of primary inorganic chemicals, which are preferably water soluble; formulating the solution with appropriate solvent, preferably deionized water; and spray depositing the solid electrolyte matrix on a heated substrate, preferably at 100 to 400° C. using a spray deposition system. In the case of lithium, the deposition step is then followed by lithiation or addition of lithium, then thermal processing, at temperatures preferably ranging between 100 and 500° C., to obtain a high lithium ion conducting inorganic solid state electrolyte. The method may be used for other ionic conductors to make electrolytes for various applications. The electrolyte may be incorporated into a lithium ion battery.

Abstract: An apparatus for depositing a solid film onto a substrate from a reagent solution includes reservoirs of reagent solutions maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solutions. The chilled solutions are dispensed through showerheads, one at a time, onto a substrate. One of the showerheads includes a nebulizer so that the reagent solution is delivered as a fine mist, whereas the other showerhead delivers reagent as a flowing stream. A heater disposed beneath the substrate maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solutions may be initiated. Each reagent solution contains at least one metal and either S or Se, or both. At least one of the reagent solutions contains Cu. The apparatus and its associated method of use are particularly suited to forming films of Cu-containing compound semiconductors.

Abstract: An apparatus for depositing a solid film onto a substrate from a reagent solution includes reservoirs of reagent solutions maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solutions. The chilled solutions are dispensed through showerheads, one at a time, onto a substrate. One of the showerheads includes a nebulizer so that the reagent solution is delivered as a fine mist, whereas the other showerhead delivers reagent as a flowing stream. A heater disposed beneath the substrate maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solutions may be initiated. Each reagent solution contains at least one metal and either S or Se, or both. At least one of the reagent solutions contains Cu. The apparatus and its associated method of use are particularly suited to forming films of Cu-containing compound semiconductors.

Abstract: A method for depositing a solid film of ZnO onto a substrate from a reagent solution includes a reservoir of reagent solution maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solution. The reagent solution contains a source of Zn, a source of 0, and multiple ligands to further control solution stability and shelf life. The chilled solution is dispensed through a showerhead onto a substrate. The substrate is positioned in a holder that has a raised structure peripheral to the substrate to retain or impound a controlled volume (or depth) of reagent solution over the exposed surface of the substrate. The reagent solution is periodically or continuously replenished from the showerhead so that only the part of the solution directly adjacent to the substrate is heated. A heater is disposed beneath the substrate and maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solution may be initiated.

Abstract: An apparatus for depositing a solid film onto a substrate from a reagent solution includes reservoirs of reagent solutions maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solutions. The chilled solutions are dispensed through showerheads, one at a time, onto a substrate. One of the showerheads includes a nebulizer so that the reagent solution is delivered as a fine mist, whereas the other showerhead delivers reagent as a flowing stream. A heater disposed beneath the substrate maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solutions may be initiated. Each reagent solution contains at least one metal and either S or Se, or both. At least one of the reagent solutions contains Cu. The apparatus and its associated method of use are particularly suited to forming films of Cu-containing compound semiconductors.

Abstract: An apparatus for depositing a solid film onto a substrate from a reagent solution includes a reservoir of solution maintained at a low temperature to inhibit homogeneous reactions. The solution contains multiple ligands to control temperature stability and shelf life. The chilled solution is periodically dispensed onto a substrate positioned in a holder having a raised peripheral structure that retains a controlled volume of solution over the substrate. The solution is periodically replenished so that only the part of the solution directly adjacent to the substrate is heated. A heater maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the solution may be initiated. The apparatus may also dispense excess chilled solution to cool various components within the apparatus and minimize nucleation of solids in areas other than on the substrate. The apparatus is particularly suited to forming films of II-VI semiconductors.

Abstract: A method of forming one or more inductors on a substrate is disclosed. The method includes forming a first dielectric material over the substrate, forming a trench in the first dielectric material, and substantially filling the trench with copper to form the one or more inductors. The first dielectric material is removed and a second dielectric material is formed over the copper. The second dielectric material is removed from an uppermost portion of the copper, thus leaving a portion of the second dielectric material on the sidewalls of the copper.

Abstract: An apparatus for depositing a solid film onto a substrate from a reagent solution includes a reservoir of solution maintained at a low temperature to inhibit homogeneous reactions. The solution contains multiple ligands to control temperature stability and shelf life. The chilled solution is periodically dispensed onto a substrate positioned in a holder having a raised peripheral structure that retains a controlled volume of solution over the substrate. The solution is periodically replenished so that only the part of the solution directly adjacent to the substrate is heated. A heater maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the solution may be initiated. The apparatus may also dispense excess chilled solution to cool various components within the apparatus and minimize nucleation of solids in areas other than on the substrate. The apparatus is particularly suited to forming films of II-VI semiconductors.

Abstract: An apparatus for depositing a solid film onto a substrate from a reagent solution includes a reservoir of reagent solution maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solution. The reagent solution contains multiple ligands to further control temperature stability and shelf life. The chilled solution is dispensed through a showerhead onto a substrate. The substrate is positioned in a holder that has a raised structure peripheral to the substrate to retain or impound a controlled volume (or depth) of reagent solution over the exposed surface of the substrate. The reagent solution is periodically or continuously replenished from the showerhead so that only the part of the solution directly adjacent to the substrate is heated. A heater is disposed beneath the substrate and maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solution may be initiated.

Abstract: A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.

Abstract: A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.

Abstract: An apparatus for depositing a solid film onto a substrate from a reagent solution includes a reservoir of reagent solution maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solution. The reagent solution contains multiple ligands to further control temperature stability and shelf life. The chilled solution is dispensed through a showerhead onto a substrate. The substrate is positioned in a holder that has a raised structure peripheral to the substrate to retain or impound a controlled volume (or depth) of reagent solution over the exposed surface of the substrate. The reagent solution is periodically or continuously replenished from the showerhead so that only the part of the solution directly adjacent to the substrate is heated. A heater is disposed beneath the substrate and maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solution may be initiated.

Abstract: A method for depositing a solid film of ZnO onto a substrate from a reagent solution includes a reservoir of reagent solution maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solution. The reagent solution contains a source of Zn, a source of O, and multiple ligands to further control solution stability and shelf life. The chilled solution is dispensed through a showerhead onto a substrate. The substrate is positioned in a holder that has a raised structure peripheral to the substrate to retain or impound a controlled volume (or depth) of reagent solution over the exposed surface of the substrate. The reagent solution is periodically or continuously replenished from the showerhead so that only the part of the solution directly adjacent to the substrate is heated. A heater is disposed beneath the substrate and maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solution may be initiated.

Abstract: A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.

Abstract: A method of forming one or more inductors on a substrate is disclosed. The method includes forming a first dielectric material over the substrate, forming a trench in the first dielectric material, and substantially filling the trench with copper to form the one or more inductors. The first dielectric material is removed and a second dielectric material is formed over the copper. The second dielectric material is removed from an uppermost portion of the copper, thus leaving a portion of the second dielectric material on the sidewalls of the copper.

Abstract: A mask layer having four mask films used in the fabrication of an interconnect structure of a semiconductor device. The first mask film and the third mask film have substantially equal etch rates. The second mask film and the fourth have substantially equal etch rates film, and different from that of the etch rate of the first and third mask films. A via is etched to the first mask film. Then a trench is etched to the third mask film of the mask layer. The via and trench are then etched in a dielectric material. The second, third and fourth mask films are removed and the first mask film remains a passivation layer for the dielectric material. A conductive metal is deposited in the via and trench.