Abstract: Implementations described herein relate to display devices including a metal circuit layer embedded in a dielectric layer configured to provide optical properties. Trenches in the dielectric layer may be etched so that the thickness of the metal circuit layer may extend away from other circuit layers. In some implementations, the metal circuit layer can include thick metal routing lines to send data to pixels of the display device. The thick metal routing lines can provide high conductivity, minimal voltage drop, and signal speed that is sufficiently high to write data to many pixels over long distances. In some implementations, the dielectric layer can be configured to absorb light. Examples of such dielectric layers include carbon-doped spin-on-glass dielectric layers.

Abstract: This disclosure provides systems, methods and apparatus for forming electromechanical devices having a gap between a movable layer and a fixed layer. In one aspect, the movable layer may be supported by hinge structures, and the design of the hinge structure may be controlled to provide a desired amount of flexure, providing electromechanical devices with a desired gap height. The height of the gap may be larger than the thickness a sacrificial material used during the fabrication process. In another aspect, the design of the hinge structure may be used to control threshold voltages of electromechanical devices.

Abstract: This disclosure provides systems, methods, and apparatus for an electromechanical systems (EMS) device with one or more protrusions connected to a surface of the EMS device. In one aspect, the EMS device includes a substrate, a stationary electrode over the substrate, and a movable electrode over the stationary electrode. The movable electrode is configured to move to three or more positions across a gap by electrostatic actuation between the movable electrode and the stationary electrode. When the protrusions contact any surface of the EMS device at one of the positions across the gap, the protrusions change the stiffness of the EMS device. At least one of the surfaces in contact with the one or more protrusions is non-rigid. In some implementations, the protrusions have a height greater than about 20 nm.

Abstract: This disclosure provides systems, methods and apparatus for a thin film stack with surface-conditioning buffer layers. In one aspect, the thin film stack includes a plurality of thin film layers each having a thickness greater than about 10 nm and a plurality of surface-conditioning buffer layers each having a thickness between about 1 nm and about 10 nm. The surface-conditioning buffer layers are alternatingly disposed between the thin film layers. Each of the surface-conditioning buffer layers are formed with the same or substantially the same thickness and composition. In some implementations, the surface-conditioning buffer layers are formed by atomic layer deposition.

Abstract: This disclosure provides systems, methods, and apparatus for an electromechanical systems (EMS) device with one or more protrusions connected to a surface of the EMS device. In one aspect, the EMS device includes a substrate, a stationary electrode over the substrate, and a movable electrode over the stationary electrode. The movable electrode is configured to move to three or more positions across a gap by electrostatic actuation between the movable electrode and the stationary electrode. When the protrusions contact any surface of the EMS device at one of the positions across the gap, the protrusions change the stiffness of the EMS device. At least one of the surfaces in contact with the one or more protrusions is non-rigid. In some implementations, the protrusions have a height greater than about 20 nm.

Abstract: This disclosure provides systems, methods and apparatus for a thin film stack with surface-conditioning buffer layers. In one aspect, the thin film stack includes a plurality of thin film layers each having a thickness greater than about 10 nm and a plurality of surface-conditioning buffer layers each having a thickness between about 1 nm and about 10 nm. The surface-conditioning buffer layers are alternatingly disposed between the thin film layers. Each of the surface-conditioning buffer layers are formed with the same or substantially the same thickness and composition. In some implementations, the surface-conditioning buffer layers are formed by atomic layer deposition.