Abstract: A control device 100 for an internal combustion engine includes an in-cylinder oxygen concentration acquisition unit configured to acquire an in-cylinder oxygen concentration, an in-cylinder temperature acquisition unit configured to acquire an in-cylinder temperature, a target in-cylinder temperature acquisition unit configured to acquire a target in-cylinder temperature during main injection based on the in-cylinder oxygen concentration acquired by the in-cylinder oxygen concentration acquisition unit, and an in-cylinder oxygen concentration control unit configured to execute in-cylinder oxygen concentration control for controlling an in-cylinder oxygen concentration during pilot injection performed prior to the main injection based on the difference between the target in-cylinder temperature during the main injection acquired by the target in-cylinder temperature acquisition unit and the in-cylinder temperature acquired by the in-cylinder temperature acquisition unit.

Abstract: A control device 100 for an internal combustion engine includes an in-cylinder oxygen concentration acquisition unit configured to acquire an in-cylinder oxygen concentration, an in-cylinder temperature acquisition unit configured to acquire an in-cylinder temperature, a target in-cylinder temperature acquisition unit configured to acquire a target in-cylinder temperature during main injection based on the in-cylinder oxygen concentration acquired by the in-cylinder oxygen concentration acquisition unit, and an in-cylinder oxygen concentration control unit configured to execute in-cylinder oxygen concentration control for controlling an in-cylinder oxygen concentration during pilot injection performed prior to the main injection based on the difference between the target in-cylinder temperature during the main injection acquired by the target in-cylinder temperature acquisition unit and the in-cylinder temperature acquired by the in-cylinder temperature acquisition unit.

Abstract: A to-be-polished surface of a silicon wafer is rough polished while supplying to a hard polishing cloth a polishing solution in which a water-soluble polymer has been added to an alkaline aqueous solution having free abrasive grains. Thus, polishing at a high polishing rate and roll-off on an outer periphery of the wafer can be satisfied simultaneously.

Abstract: A recycling method of slurry for use in wafer polishing for reusing slurry used in a polishing process of semiconductor wafer, comprises the steps of: adding a dispersant to a recovered used-slurry to inhibit aggregation of the slurry; breaking up aggregates in such a manner that the whole of the used slurry, subjected to the dispersant addition step, is passed through a shearing force imparting device to impart shearing force to the aggregates contained in the slurry by the shearing force imparting device, thereby breaking up the aggregates; and removing foreign substances in the slurry subjected to the aggregate breakup step, by means of a foreign substances removing device. According to the method, a large amount of used-slurry can be processed in a short time.

Abstract: A processing method of a semiconductor wafer is provided. The method comprising the steps of: removing at least part of oxide film from a surface of the semiconductor wafer; removing liquid from the surface; and providing at least partial oxide film on the surface by applying an oxidizing gas wherein a gas flow of the oxidizing gas and/or an ambient gas involved by the oxidizing gas is characterized by an unsaturated vapor pressure of the liquid such that the liquid on the surface vaporizes. The above-described steps are conducted in this order.

Abstract: A recycling method of slurry for use in wafer polishing for reusing slurry used in a polishing process of semiconductor wafer, comprises the steps of: adding a dispersant to a recovered used-slurry to inhibit aggregation of the slurry; breaking up aggregates in such a manner that the whole of the used slurry, subjected to the dispersant addition step, is passed through a shearing force imparting device to impart shearing force to the aggregates contained in the slurry by the shearing force imparting device, thereby breaking up the aggregates; and removing foreign substances in the slurry subjected to the aggregate breakup step, by means of a foreign substances removing device. According to the method, a large amount of used-slurry can be processed in a short time.

Abstract: A processing method of a semiconductor wafer is provided. The method comprising the steps of: removing at least part of oxide film from a surface of the semiconductor wafer; removing liquid from the surface; and providing at least partial oxide film on the surface by applying an oxidizing gas wherein a gas flow of the oxidizing gas and/or an ambient gas involved by the oxidizing gas is characterized by an unsaturated vapor pressure of the liquid such that the liquid on the surface vaporizes. The above-described steps are conducted in this order.

Abstract: A method of recycling an abrasive slurry for recycling a slurry that: contains colloidal silica; and has been used in polishing semiconductor wafer(s) is provided. The method includes: adding a dispersant to the used slurry having been collected so as to prevent the used slurry from being gelled; irradiating ultrasound to the used slurry having been added with the dispersant so as to disperse a gelled portion and aggregated silica in the used slurry; and, by using a filter, removing a foreign substance contained in the used slurry having been irradiated with the ultrasound.

Abstract: An exhaust gas control apparatus (1) according to the invention is applied to a diesel engine (2) including a turbocharger (10). The exhaust gas control apparatus (1) includes an upstream side oxidation catalyst (13) which is provided down-stream of a turbine (10b) of the turbocharger (10); a downstream side oxidation catalyst (14) which is provided downstream of the upstream side oxidation catalyst (13); a particulate filter (15) which is provided downstream of the downstream side oxidation catalyst (13); and an injector (5) which supplies fuel required for a filter recovery process for oxidizing and removing particulate matter accumulated in the particulate filter (15). The capacity of the upstream side oxidation catalyst (13) is set such that a space velocity (SV) during idling of the internal combustion engine (2) is equal to or lower than 175,000 (l/h).

Abstract: An exhaust emission control system for an internal combustion engine includes a filter that traps particulate matters and ash and a controller that starts a filter recovery process by controlling a temperature of the filter to a target temperature to bring an inside of the filter into an oxidizing atmosphere such that the particulate matter trapped and accumulated on the filter is removed through oxidization when an estimated amount of the particulate matters trapped and accumulated on the filter exceeds a predetermined amount. The target temperature is set based on the estimated amount of the ash trapped and accumulated on the filter. Even if the amount of the accumulated particulate matter per unit volume is increased owing to accumulation of the ash on the filter, and oxidization reaction speed of the particulate matter may be reduced, thus preventing excessive temperature increase in the filter.

Abstract: An exhaust system emission control system for an internal combustion engine includes a filter that traps particulate matters and ass and a controller that starts a filter recovery process by controlling a temperature of the filter to a target temperature to bring an inside of the filter into an oxidizing atmosphere such that the particulate matter trapped and accumulated on the filter is removed through oxidization when an estimated amount of the particulate matters trapped and accumulated on the filter exceeds a predetermined amount. The target temperature is set based on the estimated amount of the ash trapped and accumulated on the filter. Even if the amount of the accumulated particulate matter per unit volume is increased owing to accumulation of the ash on the filter, and oxidization reaction speed of the particulate matter may be reduced, thus preventing excessive temperature increase in the filter.