Patents by Inventor Isamu Matsuyama

Isamu Matsuyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7994035
    Abstract: There is provided a method of fabricating a semiconductor device in which a gate electrode is formed on an oxide film, which is formed by thermal oxidation on a substrate. The fabrication method includes: a first step of forming a first oxide film on the substrate; a second step of thermally processing the first oxide film in an inactive gas atmosphere; a third step of forming a second oxide film that is obtained by etching the first oxide film, which has been thermally processed in the inactive gas, to a predetermined film thickness; and a fourth step of forming and thermally processing a gate electrode on the second oxide film.
    Type: Grant
    Filed: February 3, 2009
    Date of Patent: August 9, 2011
    Assignee: Oki Semiconductor Co., Ltd.
    Inventor: Isamu Matsuyama
  • Publication number: 20090227098
    Abstract: There is provided a method of fabricating a semiconductor device in which a gate electrode is formed on an oxide film, which is formed by thermal oxidation on a substrate. The fabrication method includes: a first step of forming a first oxide film on the substrate; a second step of thermally processing the first oxide film in an inactive gas atmosphere; a third step of forming a second oxide film that is obtained by etching the first oxide film, which has been thermally processed in the inactive gas, to a predetermined film thickness; and a fourth step of forming and thermally processing a gate electrode on the second oxide film.
    Type: Application
    Filed: February 3, 2009
    Publication date: September 10, 2009
    Applicant: OKI SEMICONDUCTOR CO., LTD.
    Inventor: Isamu Matsuyama
  • Patent number: 6037615
    Abstract: A metal-semiconductor field effect transistor includes an AlGaAs buffer layer made of Al.sub.x Ga.sub.1-x As, wherein 0<x<0.4, and a channel layer made of an n-type doped In.sub.y Ga.sub.1-y As, wherein 0<y<0.4, having a thickness equal to or less than a critical thickness for lattice-matching with GaAs. Further, a doped AlGaAs layer is interposed between the AlGaAs buffer layer and the channel layer. The doped AlGaAs layer is made of Al.sub.x Ga.sub.1-x As, wherein 0<x<0.4, is doped with Si of a concentration of 5*10.sup.17 cm.sup.-3 or more, and has a thickness which is sufficient to provide a barrier against holes caused by a donor depletion region.
    Type: Grant
    Filed: May 26, 1998
    Date of Patent: March 14, 2000
    Assignee: Oki Electric Industry Co., Ltd.
    Inventors: Isamu Matsuyama, Seiji Nishi
  • Patent number: 4656509
    Abstract: A water leakage monitoring system has a carriage remotely controlled with a driving control signal to intermittently travel along an inspection rail, a plurality of discrete monitored members disposed adjacent to the inspection rail, an industrial color television camera hung from the carriage through an attitude adjusting mechanism so as to correctly oppose and monitor water leakage through each of the monitored members through the operation of the attitude adjusting mechanism in response to an attitude control signal, and a coating composition applied to the surface of each of the monitored members which changes in color when it is wet with water leaked through the associated monitored member.
    Type: Grant
    Filed: August 20, 1984
    Date of Patent: April 7, 1987
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Isamu Matsuyama, Hiroshi Sugimoto