Patents by Inventor Isamu Niki
Isamu Niki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8344403Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.Type: GrantFiled: June 30, 2010Date of Patent: January 1, 2013Assignee: Nichia CorporationInventors: Isamu Niki, Motokazu Yamada, Masahiko Sano, Shuji Shioji
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Patent number: 8344402Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.Type: GrantFiled: June 30, 2010Date of Patent: January 1, 2013Assignee: Nichia CorporationInventors: Isamu Niki, Motokazu Yamada, Masahiko Sano, Shuji Shioji
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Patent number: 8299486Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.Type: GrantFiled: June 30, 2010Date of Patent: October 30, 2012Assignee: Nichia CorporationInventors: Isamu Niki, Motokazu Yamada, Masahiko Sano, Shuji Shioji
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Patent number: 8227280Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.Type: GrantFiled: June 30, 2010Date of Patent: July 24, 2012Assignee: Nichia CorporationInventors: Isamu Niki, Motokazu Yamada, Masahiko Sano, Shuji Shioji
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Patent number: 8148744Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.Type: GrantFiled: June 30, 2010Date of Patent: April 3, 2012Assignee: Nichia CorporationInventors: Isamu Niki, Motokazu Yamada, Masahiko Sano, Shuji Shioji
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Publication number: 20100264446Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.Type: ApplicationFiled: June 30, 2010Publication date: October 21, 2010Applicant: Nichia CorporationInventors: Isamu NIKI, Motokazu Yamada, Masahiko Sano, Shuji Shioji
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Publication number: 20100266815Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.Type: ApplicationFiled: June 30, 2010Publication date: October 21, 2010Applicant: Nichia CorporationInventors: Isamu NIKI, Motokazu Yamada, Masahiko Sano, Shuji Shioji
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Publication number: 20100267181Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.Type: ApplicationFiled: June 30, 2010Publication date: October 21, 2010Applicant: Nichia CorporationInventors: Isamu NIKI, Motokazu Yamada, Masahiko Sano, Shuji Shioji
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Publication number: 20100264447Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.Type: ApplicationFiled: June 30, 2010Publication date: October 21, 2010Applicant: Nichia CorporationInventors: Isamu NIKI, Motokazu Yamada, Masahiko Sano, Shuji Shioji
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Publication number: 20100264445Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.Type: ApplicationFiled: June 30, 2010Publication date: October 21, 2010Applicant: Nichia CorporationInventors: Isamu NIKI, Motokazu Yamada, Masahiko Sano, Shuji Shioji
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Patent number: 7804101Abstract: A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.Type: GrantFiled: July 23, 2004Date of Patent: September 28, 2010Assignee: Nichia CorporationInventors: Isamu Niki, Motokazu Yamada, Masahiko Sano, Shuji Shioji
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Patent number: 7745245Abstract: At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.Type: GrantFiled: January 30, 2008Date of Patent: June 29, 2010Assignee: Nichia CorporationInventors: Isamu Niki, Motokazu Yamada, Masahiko Sano, Shuji Shioji
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Patent number: 7635875Abstract: At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.Type: GrantFiled: January 30, 2008Date of Patent: December 22, 2009Assignee: Nichia CorporationInventors: Isamu Niki, Motokazu Yamada, Masahiko Sano, Shuji Shioji
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Publication number: 20090042328Abstract: At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.Type: ApplicationFiled: January 30, 2008Publication date: February 12, 2009Applicant: Nichia CorporationInventors: Isamu NIKI, Motokazu Yamada, Masahiko Sano, Shuji Shioji
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Publication number: 20080303043Abstract: At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.Type: ApplicationFiled: January 30, 2008Publication date: December 11, 2008Applicant: Nichia CorporationInventors: Isamu NIKI, Motokazu Yamada, Masahiko Sano, Shuji Shioji
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Patent number: 7348600Abstract: The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the same active layer. Recesses 106 are formed by etching in the first electrically conductive (n) type semiconductor layer 102 formed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. For instance, the plane orientation of the A plane is exposed. An active layer is grown and joined on the plane of this plane orientation, on the bottom of the recess and the C-plane upper surface of a non-recess portion. The second electrically conductive (p) type semiconductor layer is formed on the inner surface of the recess.Type: GrantFiled: October 20, 2003Date of Patent: March 25, 2008Assignees: Nichia Corporation, California Institute of TechnologyInventors: Yukio Narukawa, Isamu Niki, Axel Scherer, Koichi Okamoto, Yoichi Kawakami, Mitsuru Funato, Shigeo Fujita
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Publication number: 20050082544Abstract: The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the same active layer. Recesses 106 are formed by etching in the first electrically conductive (n) type semiconductor layer 102 formed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. For instance, the plane orientation of the A plane is exposed. An active layer is grown and joined on the plane of this plane orientation, on the bottom of the recess and the C-plane upper surface of a non-recess portion. The second electrically conductive (p) type semiconductor layer is formed on the inner surface of the recess.Type: ApplicationFiled: October 20, 2003Publication date: April 21, 2005Inventors: Yukio Narukawa, Isamu Niki, Axel Scherer, Koichi Okamoto, Yoichi Kawakami, Mitsuru Funato, Shigeo Fujita
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Patent number: 6876009Abstract: The luminous efficiency of a nitride semiconductor device comprising a gallium nitride-based semiconductor layer formed on a dissimilar substrate is improved. An n-type layer formed on the substrate with a buffer layer interposed between them comprises a portion of recess-and-projection shape in section as viewed in the longitudinal direction. Active layers are formed on at least two side faces of the projection with the recess located between them. A p-type layer is formed within the recess. An insulating layer is formed on the top face of the projection, and on the bottom face of the recess. The n-type layer is provided with an n-electrode while the p-type layer is provided with a p-electrode contact layer. As viewed from the p-type layer formed within the recess in the gallium nitride-based semiconductor layer, the active layer and the n-type layer are located in an opposite relation to each other.Type: GrantFiled: December 9, 2002Date of Patent: April 5, 2005Assignee: Nichia CorporationInventors: Yukio Narukawa, Isamu Niki, Axel Scherer, Koichi Okamoto, Yoichi Kawakami, Mitsuru Funato, Shigeo Fujita
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Patent number: 6870191Abstract: A high external quantum efficiency is stably secured in a semiconductor light emitting device. At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.Type: GrantFiled: July 24, 2002Date of Patent: March 22, 2005Assignee: Nichia CorporationInventors: Isamu Niki, Motokazu Yamada, Masahiko Sano, Shuji Shioji
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Publication number: 20050001227Abstract: A high external quantum efficiency is stably secured in a semiconductor light emitting device. At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.Type: ApplicationFiled: July 23, 2004Publication date: January 6, 2005Applicant: Nichia CorporationInventors: Isamu Niki, Motokazu Yamada, Masahiko Sano, Shuji Shioji