Abstract: The plasma display of the present invention is a plasma display in which a dielectric layer and stripe-shaped barrier ribs are formed on a substrate, and it is characterized in that there are inclined regions at the lengthwise direction ends of said barrier ribs and, furthermore, the height (Y) of the inclined regions and the length (X) of the base of the inclined regions are within the range 0.5≦X/Y≦100. Moreover, the method of the present invention for manufacturing a plasma display is characterized in that the aforesaid stripe-shaped barrier ribs are formed via a process in which a pattern of stripe-shaped barrier ribs having inclined regions at the ends is formed on a substrate using a barrier rib paste comprising inorganic material and organic component, and a process in which said barrier rib pattern is fired.

Abstract: An amorphous carbon material, especially for an electrode of a lithium ion secondary battery, is characterized by an interlayer spacing d(002), obtained from the X-ray diffraction line assigned to the (002) plane of the carbon, of 0.345 nm to 0.365 nm, a ratio (Ps) os the number of carbon atoms involved in the layer structure to the total number of carbon atoms of from 0.54 to 0.85, and a ratio of the total nitrogen:total carbon atoms in the amorphous carbon of 0.005:1 to 0.055:1. The amorphous carbon material is prepared by applying a heat treatment to an amorphous carbon under under vacuum or inert gas atmosphere for at least 30 minutes to provide the desired crystalline structure. The carbon material may take the form of carbon fiber material, especially short carbon fibers obtained by pulverizing larger carbon fibers. A lithium ion secondary battery containing an electrode comprising such an amorphous carbon material has a large discharge capacity and high charge-discharge cycle characteristics.

Abstract: An oxygen scavenger comprises an oxygen absorbent composition and an oxygen permeable film covering the oxygen absorbent composition and including an asymmetric porous membrane whose outer surface portion in the thickness direction of the asymmetric porous membrane is formed as a dense skin layer. Since the dense skin layer is very thin, the oxygen permeability to the oxygen absorbent composition through the oxygen permeable film can be maintained sufficiently high. At the same time, since the dense skin layer has a sufficiently high barrier property as well as a high oxygen permeability, contact of the substances stored in a container with the oxygen absorbent composition can be surely prevented. The substances stored in the container attached with the oxygen scavenger can be prevented from deterioration due to the oxygen present in the container by a high oxygen absorption ability of the scavenger, and maintained in a good or fresh condition for a long term.

Abstract: The apparatus includes a semiconductor laser diode, a mounting for the laser diode and a casing with a window through which light from the diode passes. The casing hermetically seals the diode. A magneto-optical member is provided between the end face of the laser diode and the window. The magneto-optical member has a spontaneous magnetization oriented in the direction of the light transmission and a magnetic field is applied to saturate the magneto-optical member.

Abstract: A buried layer semiconductor laser includes a mesa stripe comprised of a multi-layer structure having successively over a substrate at least a first semiconductor cladding layer of a first conductivity type, a semiconductor optical waveguide layer of said first conductivity type, a semiconductor active layer, a second semiconductor cladding layer of a second conductivity type, and a third semiconductor cladding layer of the second conductivity type. The sides of the semiconductor optical waveguide layer are covered by a first semiconductor burying layer of the second conductivity type and having a refractive index the same as or smaller than the refractive index of the optical waveguide layer. A second semiconductor burying layer of the first conductivity type covers the sides of the active layer, the second cladding layer and the third cladding layer. The lateral width of the active layer and the second cladding layer are smaller than the lateral widths of the other layers of the multi-layer structure.

Abstract: A semiconductor laser of the rib guide type having the thickness of an active layer within a stripe-shaped region thicker than that of the outside, and thus the stripe-shaped region is made to have a waveguide action and, thereby, fundamental mode laser may be achieved.

Abstract: A semiconductor laser is provided with a semiconductor substrate having a longitudinal groove formed therein. A first cladding layer is formed on the substrate by an epitaxial process which partially fills in the groove. A waveguide layer is provided atop the first cladding layer, the waveguide layer having either a plano-convex or concave-convex configuration and being thicker at its central region than at its outward edges. An active layer and a second cladding layer are laid over the waveguide layer, whereby the first and second cladding layers serve to confine the laser light within the waveguide layer.

Abstract: A semiconductor laser device in which at least one of the main surfaces of a semiconductor laser crystal body which generates heat during operation is brought into thermal contact with a silicon crystal heat-sink body.