Abstract: A bevel/backside polymer removing method removes multi-layered bevel/backside polymers adhering to a bevel surface and a backside of a target substrate. The multi-layered bevel/backside polymers include an inorganic layer and an organic layer. The bevel/backside polymer removing method includes mechanically destroying the multi-layered bevel/backside polymers and heating residues of the multi-layered bevel/backside polymers mechanically destroyed.

Abstract: A substrate processing method includes preparing a substrate having a low-k interlayer dielectric film as a to-be-etched film and a photoresist film, formed on the low-k interlayer insulating film, serving as an etching mask with a predetermined circuit pattern; etching the low-k interlayer insulating film through the photoresist film to form grooves and/or holes in the low-k interlayer insulating film; ashing the photoresist film by using hydrogen radicals generated by bring a hydrogen-containing gas into contact with a catalyst of a high temperature; and recovering damage to the low-k interlayer insulating film due to the ashing by supplying a specific recovery gas. The method further includes recovering damage to the low-k interlayer insulating film due to the etching by supplying a specific recovery gas.

Abstract: A method for detecting an end point of a resist peeling process in which a resist is gasified to be peeled off by producing hydrogen radicals by catalytic cracking reaction where a hydrogen-containing gas contacts with a high-temperature catalyst, and contacting the produced hydrogen radicals with a resist on a substrate, includes monitoring one or more parameters indicating a state of the catalyst and detecting the end point of the resist peeling process based on variations of the monitored parameters. The hydrogen-containing gas may be a H2 gas. The parameters indicating the state of the catalyst may be one or more electrical parameters when a power is supplied to the catalyst. Further, the catalyst may be a filament made of a high melting point metal.

Abstract: A substrate processing apparatus includes a processing vessel; a mounting table for mounting the substrate thereon in the processing vessel; a gas inlet unit provided in the processing vessel; a gas supply mechanism for supplying a hydrogen-containing gas into the processing vessel through the gas inlet unit; a gas discharge port provided at the processing vessel; a gas exhaust mechanism for exhausting an inside of the processing vessel through the gas discharge port; a catalyst provided in the processing vessel; and a heating unit for heating the catalyst. Hydrogen radicals are formed in the processing vessel by a catalytic cracking reaction between the hydrogen-containing gas and the catalyst of high temperature, and the substrate is processed by the hydrogen radicals.

Abstract: A method of checking a substrate edge processing apparatus, which can accurately check the state of the substrate edge processing apparatus. The thickness of an organic film formed on a surface of a substrate is measured, and a predetermined process in which undesired substance attached to an edge of the substrate is removed is carried out on a predetermined portion of the organic film using the substrate edge processing apparatus. The film thickness of the predetermined portion is then measured. The removal amount of the organic film is calculated based on the measurement results, and the performance of the substrate edge processing apparatus is evaluated based on the calculated removal amount.

Abstract: A bevel/backside polymer removing method removes multi-layered bevel/backside polymers adhering to a bevel surface and a backside of a target substrate. The multi-layered bevel/backside polymers include an inorganic layer and an organic layer. The bevel/backside polymer removing method includes mechanically destroying the multi-layered bevel/backside polymers and heating residues of the multi-layered bevel/backside polymers mechanically destroyed.

Abstract: A substrate processing method includes preparing a substrate having a low-k interlayer dielectric film as a to-be-etched film and a photoresist film, formed on the low-k interlayer insulating film, serving as an etching mask with a predetermined circuit pattern; etching the low-k interlayer insulating film through the photoresist film to form grooves and/or holes in the low-k interlayer insulating film; ashing the photoresist film by using hydrogen radicals generated by bring a hydrogen-containing gas into contact with a catalyst of a high temperature; and recovering damage to the low-k interlayer insulating film due to the ashing by supplying a specific recovery gas. The method further includes recovering damage to the low-k interlayer insulating film due to the etching by supplying a specific recovery gas.

Abstract: A method for detecting an end point of a resist peeling process in which a resist is gasified to be peeled off by producing hydrogen radicals by catalytic cracking reaction where a hydrogen-containing gas contacts with a high-temperature catalyst, and contacting the produced hydrogen radicals with a resist on a substrate, includes monitoring one or more parameters indicating a state of the catalyst and detecting the end point of the resist peeling process based on variations of the monitored parameters. The hydrogen-containing gas may be a H2 gas. The parameters indicating the state of the catalyst may be one or more electrical parameters when a power is supplied to the catalyst. Further, the catalyst may be a filament made of a high melting point metal.

Abstract: A processing system for integrated substrate processing in a substrate processing tool. The processing system contains a substrate holder configured for supporting and controlling the temperature of the substrate, a hot filament hydrogen radical source for generating hydrogen radicals, and a controller configured for controlling the processing system. The hot filament hydrogen radical source includes a showerhead assembly containing an internal volume and a showerhead plate having gas passages facing the substrate for exposing the substrate to the hydrogen radicals, and at least one metal wire filament within the internal volume to thermally dissociate H2 gas into the hydrogen radicals.

Abstract: A method of integrated processing is provided for a substrate in the substrate processing tool. The substrate contains an etch feature in a dielectric film and an exposed metal interconnect pattern formed underneath the etch feature. The integrated process includes pretreating exposed surfaces of the etch feature and the exposed metal interconnect pattern with a flow of hydrogen radicals generated by thermal decomposition of H2 gas by a hot filament hydrogen radical source separated from the substrate by a showerhead plate containing gas passages facing the substrate. The integrated process further includes depositing a barrier metal film over the pretreated exposed surfaces, and forming a Cu metal film on the barrier metal film.