Abstract: Provided is a throttle device including a total of two throttle units in each two cylinders in an engine 1, each of the throttle units having a unit body having intake air passages corresponding to four cylinders of the engine, a throttle shaft rotatably supported by the unit body, throttle valves secured to the throttle shaft to open and close the intake air passages for the cylinders, a motor, and a deceleration mechanism decelerating rotation of a drive shaft of the motor and transmitting the decelerated rotation to the throttle shaft, in which a deceleration ratio of the deceleration mechanism provided in a first throttle unit and a deceleration ratio of the deceleration mechanism provided in a second throttle unit out of the two throttle units are different from each other.

Abstract: Provided is a throttle device including a total of two throttle units in two cylinders in an engine, each of the throttle units having a throttle shaft, throttle valves, and a motor driving and rotating the throttle shaft, in which a return spring provided in a first throttle unit and a return spring provided in a second throttle unit out of the two throttle units are components of the same type and have mutually different installation forms in the throttle units such that biasing torques at the same degree of opening of the throttle valves differ from each other, thereby enabling performances of responding to a change in rotation speed to be different from each other.

Abstract: Provided is a throttle device including a total of two throttle units in an engine for each two cylinders, each of the throttle units having a unit body having intake air passages corresponding to the four cylinders of the engine, a throttle shaft rotatably supported by the unit body, throttle valves secured to the throttle shaft to open and close the intake air passages for the cylinders, and a motor driving and rotating the throttle shaft, in which a first motor provided in a first throttle unit and a second motor provided in a second throttle unit out of the two throttle units have mutually different responsivities to a change in rotation speed.

Abstract: Provided is a throttle device including a total of two throttle units in two cylinders in an engine, each of the throttle units having a throttle shaft, throttle valves, and a motor driving and rotating the throttle shaft, in which a return spring provided in a first throttle unit and a return spring provided in a second throttle unit out of the two throttle units are components of the same type and have mutually different installation forms in the throttle units such that biasing torques at the same degree of opening of the throttle valves differ from each other, thereby enabling performances of responding to a change in rotation speed to be different from each other.

Abstract: Provided is a throttle device including a total of two throttle units in each two cylinders in an engine 1, each of the throttle units having a unit body having intake air passages corresponding to four cylinders of the engine, a throttle shaft rotatably supported by the unit body, throttle valves secured to the throttle shaft to open and close the intake air passages for the cylinders, a motor, and a deceleration mechanism decelerating rotation of a drive shaft of the motor and transmitting the decelerated rotation to the throttle shaft, in which a deceleration ratio of the deceleration mechanism provided in a first throttle unit and a deceleration ratio of the deceleration mechanism provided in a second throttle unit out of the two throttle units are different from each other.

Abstract: Provided is a throttle device including a total of two throttle units in an engine for each two cylinders, each of the throttle units having a unit body having intake air passages corresponding to the four cylinders of the engine, a throttle shaft rotatably supported by the unit body, throttle valves secured to the throttle shaft to open and close the intake air passages for the cylinders, and a motor driving and rotating the throttle shaft, in which a first motor provided in a first throttle unit and a second motor provided in a second throttle unit out of the two throttle units have mutually different responsivities to a change in rotation speed.

Abstract: A method for producing a compound semiconductor layer comprises dissolving a metal feedstock comprising at least one of a group I-B element and a group III-B element, in a metal state, in a mixed solvent comprising an organic compound containing a chalcogen element and a Lewis base organic compound to produce a solution for forming a semiconductor; forming a coat using the solution for forming a semiconductor; and heat-treating the coat.

Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers.

Abstract: It is aimed to provide a photoelectric conversion device having high adhesion between a light-absorbing layer and an electrode layer as well as high photoelectric conversion efficiency. A photoelectric conversion device comprises a light-absorbing layer including a chalcopyrite-based compound semiconductor and oxygen. The light-absorbing layer includes voids therein. An atomic concentration of oxygen in the vicinity of the voids is higher than an average atomic concentration of oxygen in the light-absorbing layer.

Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers.

Abstract: It is aimed to provide a photoelectric conversion device having improved conversion efficiency, and a method for manufacturing the photoelectric conversion device. For achieving this object, a photoelectric conversion device including a first semiconductor layer and a second semiconductor layer is employed. In the photoelectric conversion device, the first semiconductor layer includes one principal surface on which a plurality of projections are scattered, includes a I-III-VI group compound semiconductor, and has a first conductivity type. The second semiconductor layer is disposed on the one principal surface, has a thickness in a normal direction of the one principal surface, and has a second conductivity type different from the first conductivity type. Further, a first distance along which each of the projections is projected in the normal direction is longer than a second distance along which the second semiconductor layer is provided in the normal direction.

Abstract: A method for manufacturing a semiconductor layer according to an embodiment of the present invention comprises preparing a first compound, preparing a second compound, making a semiconductor layer forming solution, and forming a semiconductor layer including a group compound by using this semiconductor layer forming solution. The first compound contains a first chalcogen-element-containing organic compound, a first Lewis base, a I-B group element, and a first III-B group element. The second compound contains an organic ligand and a second III-B group element. The semiconductor layer forming solution contains the first compound, the second compound, and an organic solvent.

Abstract: It is an object of the present invention to provide a method for manufacturing a semiconductor layer, a method for manufacturing a photoelectric conversion device, and a semiconductor layer forming solution which are able to easily manufacture a good semiconductor layer having a desired thickness. To accomplish this object, a starting solution containing a metallic element, a chalcogen organic compound and a Lewis base organic compound is initially produced. Next, heating the starting solution produces fine particles. The fine particles contain a metal chalcogenide which is a compound of the metallic element and a chalcogen element included in the chalcogen organic compound. A semiconductor layer is formed by using a semiconductor layer forming solution in which the fine particles are dispersed.

Abstract: The production method of a photoelectric conversion device comprises adding a chalcogenide powder of a group-IIIB element to an organic solvent including a single source precursor containing a group-IB element, a group-IIIB element, and a chalcogen element to prepare a solution for forming a semiconductor, and forming a semiconductor containing a group-I-III-VI compound by use of the solution for forming a semiconductor.

Abstract: A method for producing a compound semiconductor layer comprises dissolving a metal feedstock comprising at least one of a group I-B element and a group III-B element, in a metal state, in a mixed solvent comprising an organic compound containing a chalcogen element and a Lewis base organic compound to produce a solution for forming a semiconductor; forming a coat using the solution for forming a semiconductor; and heat-treating the coat.

Abstract: The production method of a photoelectric conversion device comprises the steps of adding a chalcogenide powder of a group-IIIB element to an organic solvent including a single source precursor containing a group-IB element, a group-IIIB element, and a chalcogen element to prepare a solution for forming a semiconductor, and forming a semiconductor containing a group-I-III-VI compound by use of the solution for forming a semiconductor.

Abstract: The invention relates to a cemented carbide material having a hard phase including tungsten carbide (WC) grains having an average grain size of 0.3 microns or less and also including cobalt (Co) as a bonding phase. The material also includes cobalt tungsten carbide grains that have a smaller average grain size than that of the tungsten carbide grains. The cemented carbide material has use, among others, in making cutting tools.

Abstract: When a first article is to be delivered to a customer and a second article is to be collected from the customer, first rack components required for delivery of the first article and second rack components not required for delivery of the first article, yet required for collecting the second article, are specified. Delivery procedure and collection procedure of the articles using the specified first rack components and second rack components are instructed to a worksite. Accordingly, delivery and collection of the articles can be carried out by making efficient use of the rack components commonly used for the first article and the second article.

Abstract: A throttle assembly for intake air protects a link mechanism for interlocking throttles with each other from water and mud and maintains the throttle operability in a satisfactory state. The throttle assembly for intake air includes a plurality of throttle devices for injecting fuel into intake air to generate an air-fuel mixture; a link mechanism for connecting driving portions of the throttle devices with each other, a link mechanism housing chamber defined by an outer wall member for forming a link mechanism housing chamber and housing the link mechanism, and seal members provided at the connected or mated portions of the outer wall member and a different member or the connected or mated portions of a plurality of outer wall configuring members which configure the outer wall member.

Abstract: A throttle assembly for intake air protects a link mechanism for interlocking throttles with each other from water and mud and maintains the throttle operability in a satisfactory state. The throttle assembly for intake air includes a plurality of throttle devices for injecting fuel into intake air to generate an air-fuel mixture; a power transmission mechanism for interlocking the driving portions of the throttle devices with each other, a power transmission mechanism housing chamber defined by an outer wall member for forming a power transmission mechanism housing chamber and housing the power transmission mechanism, and seal means provided to the connected or mated portions of the outer wall member and a different member or the connected or mated portions of a plurality of outer wall configuring members which configure the outer wall member.