Abstract: When a photoresist or the like is spin-coated on a semiconductor chip comprising a seal ring is formed, striation due to corners of the seal ring is suppressed. A wiring metal layer and a contact are layered, and a seal structure (28) that surrounds an element forming region (22) on a semiconductor chip (20) is formed. A planar shape of the seal ring structure (28) has shape that is, at a basic level, a rectangle corresponding with the shape of the semiconductor chip (20), but with cutoffs present on corner parts (60) of the rectangle. Specifically, the seal ring structure (28) is disposed along a periphery of a rectangle having corner cutoffs.

Abstract: The invention provides a manufacturing method of a solid-state image sensing device where light-receiving sensitivity is improved. The manufacturing method of the solid-state image sensing device of the invention has forming an insulating film on a light-receiving region and a non-light-receiving region, forming a mask pattern for forming a lens on the insulating film on the light-receiving region and a dummy mask pattern for forming a lens on the insulating film on the non-light-receiving region, forming a plurality of convex portions on the insulating film by etching the insulating film by using the mask pattern and the dummy mask pattern as a mask, forming a first lens film on the insulating film, forming a planarizing film having a lower etching rate than the first lens film on the first lens film, etching back the first lens film and the planarizing film, and forming a second lens film on the first lens film.

Abstract: The invention provides a manufacturing method of a solid-state image sensing device where light-receiving sensitivity is improved. The manufacturing method of the solid-state image sensing device of the invention has forming an insulating film on a light-receiving region and a non-light-receiving region, forming a mask pattern for forming a lens on the insulating film on the light-receiving region and a dummy mask pattern for forming a lens on the insulating film on the non-light-receiving region, forming a plurality of convex portions on the insulating film by etching the insulating film by using the mask pattern and the dummy mask pattern as a mask, forming a first lens film on the insulating film, forming a planarizing film having a lower etching rate than the first lens film on the first lens film, etching back the first lens film and the planarizing film, and forming a second lens film on the first lens film.