Patents by Inventor Isamu Ueno
Isamu Ueno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10560650Abstract: Provided is a photoelectric conversion device including: a pixel array including pixels arranged to form columns; and a readout unit including column readout circuits provided corresponding to the columns, each of the column readout circuits being configured to read out signals from the pixels in a corresponding column. Each of the column readout circuits includes a holding unit configured to hold a reference voltage supplied from a reference voltage line, an amplifier unit configured to amplify a signal output from one of the pixels based on the reference voltage held in the holding unit, and a switch unit configured to electrically disconnect the reference voltage line from the holding unit when the amplifier unit amplifies the signal. The holding unit of a first column readout circuit and the holding unit of a second column readout circuit are electrically connected to each other by a path other than the switch unit.Type: GrantFiled: April 13, 2018Date of Patent: February 11, 2020Assignee: CANON KABUSHIKI KAISHAInventor: Isamu Ueno
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Publication number: 20180309945Abstract: Provided is a photoelectric conversion device including: a pixel array including pixels arranged to form columns; and a readout unit including column readout circuits provided corresponding to the columns, each of the column readout circuits being configured to read out signals from the pixels in a corresponding column. Each of the column readout circuits includes a holding unit configured to hold a reference voltage supplied from a reference voltage line, an amplifier unit configured to amplify a signal output from one of the pixels based on the reference voltage held in the holding unit, and a switch unit configured to electrically disconnect the reference voltage line from the holding unit when the amplifier unit amplifies the signal. The holding unit of a first column readout circuit and the holding unit of a second column readout circuit are electrically connected to each other by a path other than the switch unit.Type: ApplicationFiled: April 13, 2018Publication date: October 25, 2018Inventor: Isamu Ueno
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Patent number: 9257479Abstract: A method of manufacturing an active pixel sensor having a plurality of pixels, each of the pixels having a photodiode formed by a part of a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type, and a transfer transistor for transferring a charge carrier from the photodiode, includes the steps of preparing a substrate on which the first semiconductor region of the first conductive type is formed, forming a mask to form the second semiconductor region on the substrate, forming the second semiconductor region using the mask, and forming a gate of the transferring transistor after forming the second semiconductor region. The gate of the transferring transistor overlaps the second semiconductor region in a planar view.Type: GrantFiled: December 23, 2013Date of Patent: February 9, 2016Assignee: CANON KABUSHIKI KAISHAInventors: Toru Koizumi, Shigetoshi Sugawa, Isamu Ueno, Tetsunobu Kochi, Katsuhito Sakurai, Hiroki Hiyama
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Patent number: 8883526Abstract: An image pickup device, wherein a part of the carriers overflowing from the photoelectric conversion unit for a period of photoelectrically generating and accumulating the carriers may be flowed into the floating diffusion region, and a pixel signal generating unit generating a pixel signal according to the carriers stored in the photoelectric conversion unit and the carriers having overflowed into the floating diffusion region, is provided. The expansion of a dynamic range and the improvement of an image quality can be provided by controlling a ratio of the carriers flowing into the floating diffusion region to the carriers overflowing from such a photoelectric conversion unit at high accuracy.Type: GrantFiled: December 6, 2010Date of Patent: November 11, 2014Assignee: Canon Kabushiki KaishaInventors: Akira Okita, Toru Koizumi, Isamu Ueno, Katsuhito Sakurai
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Publication number: 20140106496Abstract: A method of manufacturing an active pixel sensor having a plurality of pixels, each of the pixels having a photodiode formed by a part of a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type, and a transfer transistor for transferring a charge carrier from the photodiode, includes the steps of preparing a substrate on which the first semiconductor region of the first conductive type is formed, forming a mask to form the second semiconductor region on the substrate, forming the second semiconductor region using the mask, and forming a gate of the transferring transistor after forming the second semiconductor region. The gate of the transferring transistor overlaps the second semiconductor region in a planar view.Type: ApplicationFiled: December 23, 2013Publication date: April 17, 2014Applicant: CANON KABUSHIKI KAISHAInventors: Toru Koizumi, Shigetoshi Sugawa, Isamu Ueno, Tetsunobu Kochi, Katsuhito Sakurai, Hiroki Hiyama
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Patent number: 8421894Abstract: An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit.Type: GrantFiled: December 15, 2011Date of Patent: April 16, 2013Assignee: Canon Kabushiki KaishaInventors: Toru Koizumi, Akira Okita, Katsuhito Sakurai, Isamu Ueno
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Patent number: 8395193Abstract: A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.Type: GrantFiled: February 2, 2012Date of Patent: March 12, 2013Assignee: Canon Kabushiki KaishaInventors: Toru Koizumi, Shigetoshi Sugawa, Isamu Ueno, Tetsunobu Kochi, Katsuhito Sakurai, Hiroki Hiyama
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Publication number: 20120146100Abstract: A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.Type: ApplicationFiled: February 2, 2012Publication date: June 14, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Toru Koizumi, Shigetoshi Sugawa, Isamu Ueno, Tesunobu Kochi, Katsuhito Sakurai, Hiroki Hiyama
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Publication number: 20120086843Abstract: An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit.Type: ApplicationFiled: December 15, 2011Publication date: April 12, 2012Applicant: Canon Kabushiki KaishaInventors: Toru Koizumi, Akira Okita, Katsuhito Sakurai, Isamu Ueno
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Patent number: 8138528Abstract: A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.Type: GrantFiled: March 3, 2010Date of Patent: March 20, 2012Assignee: Canon Kabushiki KaishaInventors: Toru Koizumi, Shigetoshi Sugawa, Isamu Ueno, Tesunobu Kochi, Katsuhito Sakurai, Hiroki Hiyama
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Patent number: 8089545Abstract: A solid-state image pickup device having a pixel includes a photoelectric conversion unit generating and accumulating charge by photoelectric conversion; a charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit. A part of charge spilling from the photoelectric conversion unit is caused to flow into the charge holding unit and thereby extend the dynamic range, and at the same time, improve image quality.Type: GrantFiled: April 29, 2009Date of Patent: January 3, 2012Assignee: Canon Kabushiki KaishaInventors: Toru Koizumi, Akira Okita, Katsuhito Sakurai, Isamu Ueno
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Patent number: 7973835Abstract: This invention is to provide a solid-state image pickup apparatus including a photoelectric conversion unit (PD), transfer switch (MTX) for transferring signal charges from the photoelectric conversion unit, capacitance for holding the transferred signal charges, and amplification transistor (MSF) for outputting a signal corresponding to the signal charges held by the capacitance. The amplification transistor includes a capacitance unit (CFD) having the first capacitance value and an additive capacitance unit (Cox) for adding a capacitance to the capacitance unit to increase the first capacitance value and obtain the second capacitance value. A signal read-out from the amplification transistor has a first read-out mode in which a signal is read out while keeping the signal charges held by the capacitance unit and additive capacitance unit, and a second read-out mode in which a signal is read out while keeping the signal charges held by the capacitance unit.Type: GrantFiled: October 19, 2004Date of Patent: July 5, 2011Assignee: Canon Kabushiki KaishaInventors: Katsuhito Sakurai, Shigetoshi Sugawa, Hideyuki Arai, Isamu Ueno, Katsuhisa Ogawa, Toru Koizumi, Tetsunobu Kochi, Hiroki Hiyama
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Publication number: 20110074993Abstract: An image pickup device, wherein a part of the carriers overflowing from the photoelectric conversion unit for a period of photoelectrically generating and accumulating the carriers may be flowed into the floating diffusion region, and a pixel signal generating unit generating a pixel signal according to the carriers stored in the photoelectric conversion unit and the carriers having overflowed into the floating diffusion region, is provided. The expansion of a dynamic range and the improvement of an image quality can be provided by controlling a ratio of the carriers flowing into the floating diffusion region to the carriers overflowing from such a photoelectric conversion unit at high accuracy.Type: ApplicationFiled: December 6, 2010Publication date: March 31, 2011Applicant: CANON KABUSHIKI KAISHAInventors: AKIRA OKITA, TORU KOIZUMI, ISAMU UENO, KATSUHITO SAKURAI
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Patent number: 7872286Abstract: An image pickup device, wherein a part of the carriers overflowing from the photoelectric conversion unit for a period of photoelectrically generating and accumulating the carriers may be flowed into the floating diffusion region, and a pixel signal generating unit generating a pixel signal according to the carriers stored in the photoelectric conversion unit and the carriers having overflowed into the floating diffusion region, is provided. The expansion of a dynamic range and the improvement of an image quality can be provided by controlling a ratio of the carriers flowing into the floating diffusion region to the carriers overflowing from such a photoelectric conversion unit at high accuracy.Type: GrantFiled: January 6, 2006Date of Patent: January 18, 2011Assignee: Canon Kabushiki KaishaInventors: Akira Okita, Toru Koizumi, Isamu Ueno, Katsuhito Sakurai
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Publication number: 20100155787Abstract: A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.Type: ApplicationFiled: March 3, 2010Publication date: June 24, 2010Applicant: CANON KABUSHIKI KAISHAInventors: Toru Koizumi, Shigetoshi Sugawa, Isamu Ueno, Tesunobu Kochi, Katsuhito Sakurai, Hiroki Hiyama
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Patent number: 7724292Abstract: An image pickup apparatus having a plurality of pixels; and a color filter array of four colors disposed on the plurality of pixels, wherein the color filter away has a periodicity of two rows×two columns, and colors of four color filters in a periodical unit of two rows×two columns are all different.Type: GrantFiled: June 23, 2006Date of Patent: May 25, 2010Assignee: Canon Kabushiki KaishaInventors: Isamu Ueno, Shigetoshi Sugawa, Katsuhisa Ogawa, Toru Koizumi, Tetsunobu Kochi, Katsuhito Sakurai, Hiroki Hiyama
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Patent number: 7705373Abstract: A MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, a third semiconductor region of the first conductivity type disposed at a light incident side of the second semiconductor region, and a transfer MOS transistor having the second semiconductor region, a fourth semiconductor region of the second conductivity type, and a gate electrode disposed on an insulating film on the first semiconductor region between the photoelectric conversion unit and the fourth semiconductor region to transfer a charge carrier from the second semiconductor region to the fourth semiconductor region. The photoelectric conversion unit and the transfer MOS transistor are disposed on a substrate.Type: GrantFiled: July 5, 2007Date of Patent: April 27, 2010Assignee: Canon Kabushiki KaishaInventors: Toru Koizumi, Shigetoshi Sugawa, Isamu Ueno, Tesunobu Kochi, Katsuhito Sakurai, Hiroki Hiyama
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Publication number: 20090213260Abstract: An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit.Type: ApplicationFiled: April 29, 2009Publication date: August 27, 2009Applicant: Canon Kabushiki KaishaInventors: TORU KOIZUMI, Akira Okita, Katsuhito Sakurai, Isamu Ueno
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Patent number: 7538810Abstract: An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit.Type: GrantFiled: January 13, 2006Date of Patent: May 26, 2009Assignee: Canon Kabushiki KaishaInventors: Toru Koizumi, Akira Okita, Katsuhito Sakurai, Isamu Ueno
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Patent number: 7466003Abstract: A solid state image pickup device that can properly widen a dynamic range is provided. Carriers that have overflowed from photodiodes (1003a to 1003c) to lateral overflow regions (1010a to 1010c) and carriers accumulated in the photodiodes (1003a and 1003b) are transferred to FD regions (1005a to 1005c). Signals based on those carriers are added and held in a signal level holding capacitor (Cs) and read out therefrom, thereby widening the dynamic range.Type: GrantFiled: January 10, 2006Date of Patent: December 16, 2008Assignee: Canon Kabushiki KaishaInventors: Isamu Ueno, Toru Koizumi, Akira Okita, Katsuhito Sakurai