Abstract: A first bond portion is formed on a first electrode, and for a wire extended from the first bond portion, a tip of a capillary is pressed against a bump formed on a second electrode, to form a second bond portion to which a shape of a pressing surface at the tip of the capillary is transferred. A base end of the second bond portion from which the wire starts becoming thinner is located on the inside of the bump from an end of a bonding surface by 10% or more of the length of the bonding surface, and the wire is cut with the capillary.

Abstract: Light from a semiconductor light-emitting element travels in all directions. Thus, light that travels in the directions other than a lighting direction cannot be used effectively. Means for forming a semiconductor light-emitting element having tilted side surfaces, and forming a reflective layer on the tilted side surfaces has been proposed. However, since the tilted surfaces are formed by an etching method or the like, it takes a long time to form the tilted surfaces, and it is difficult to control the tilted surfaces. As a solution to these problems, semiconductor light-emitting elements are placed on a submount substrate and sealed with a sealant, and then a groove is formed in a portion between adjoining ones of the semiconductor light-emitting elements. The grooves formed are filled with a reflective material, and a light-emitting surface is polished. Then, the submount substrate is divided into individual semiconductor light-emitting devices.

Abstract: A light emitting device 1 includes a wiring substrate 4 on which a light emitting element 2 is mounted, a sealing section 5 containing a phosphor and sealing the light emitting element 2, a light diffusion section 7 provided on the sealing section 5 and containing particles for diffusing light emitted from the light emitting element 2, and a light reflection section 6 provided so as to cover part of the sealing section 5 other than a top surface of the sealing section 5 and reflecting light emitted from the light emitting element 2. In the light diffusion section 7, silicone dioxide which is a diffusing material is contained in a transparent medium which is a base material. In the light reflection section 6, titanium dioxide which is a reflective material is contained in a transparent medium which is a base material.

Abstract: Light from a semiconductor light-emitting element travels in all directions. Thus, light that travels in the directions other than a lighting direction cannot be used effectively. Means for forming a semiconductor light-emitting element having tilted side surfaces, and forming a reflective layer on the tilted side surfaces has been proposed. However, since the tilted surfaces are formed by an etching method or the like, it takes a long time to form the tilted surfaces, and it is difficult to control the tilted surfaces. As a solution to these problems, semiconductor light-emitting elements are placed on a submount substrate and sealed with a sealant, and then a groove is formed in a portion between adjoining ones of the semiconductor light-emitting elements. The grooves formed are filled with a reflective material, and a light-emitting surface is polished. Then, the submount substrate is divided into individual semiconductor light-emitting devices.

Abstract: The object of the present invention is to provide a method for production of a photoresist resin which enables to reduce the amount of solvent used, to remove effectively impurities such as low molecular components and metal components and to prepare easily a resin having a narrow molecular weight distribution. The present invention is a method for production of a photoresist resin by polymerizing a polymerizable compound in the presence of a solvent and the method comprises (1) a resin solution preparation process in which a resin solution containing a photoreist resin is prepared, and (2) a purification process in which the resin solution is purified using a ultrafilter membrane.

Abstract: There is provided a method for forming wiring or an electrode by coating a substrate with a composition comprising (A) a complex of an amine compound and a hydrogenated aluminum compound and (B) a titanium compound or a composition comprising the complex and (C) metal particles and subjecting the obtained coating film to heating and/or a light treatment. By the method, a film can be formed that uses a conductive film forming composition with which wiring and an electrode that can be suitably used for electronic devices can be formed easily and inexpensively.

Abstract: There is provided a method for forming wiring or an electrode by coating a substrate with a composition comprising (A) a complex of an amine compound and a hydrogenated aluminum compound and (B) a titanium compound or a composition comprising the complex and (C) metal particles and subjecting the obtained coating film to heating and/or a light treatment. By the method, a film can be formed that uses a conductive film forming composition with which wiring and an electrode that can be suitably used for electronic devices can be formed easily and inexpensively.

Abstract: There is provided a method for forming wiring or an electrode by coating a substrate with a composition comprising (A) a complex of an amine compound and a hydrogenated aluminum compound and (B) a titanium compound or a composition comprising the complex and (C) metal particles and subjecting the obtained coating film to heating and/or a light treatment. By the method, a film can be formed that uses a conductive film forming composition with which wiring and an electrode that can be suitably used for electronic devices can be formed easily and inexpensively.

Abstract: A composition for forming a coating film, comprising a reaction product of a tantalum alkoxide and at least one compound selected from carbamic acid, carboxylic acid and carboxylic anhydride and a solvent. A tantalum oxide film is obtained by forming a coating film of this composition and thermally and/or optically treating the coating film. This tantalum oxide film has a large dielectric constant and a small leak current.

Abstract: A composition for forming a high-quality tantalum film which is advantageously used as an capacitor insulating film and a process for forming the high-quality tantalum film. The composition for forming a tantalum oxide film, which comprises at least one tantalum compound selected from the group consisting of a reaction product of a compound capable of reacting with a tantalum alkoxide and a tantalum alkoxide and a hydrolyzate of the reaction product, and a solvent, and the process for forming the tantalum oxide film by applying this composition to a substrate and heating it.

Abstract: There is provided a method for forming wiring or an electrode by coating a substrate with a composition comprising (A) a complex of an amine compound and a hydrogenated aluminum compound and (B) a titanium compound or a composition comprising the complex and (C) metal particles and subjecting the obtained coating film to heating and/or a light treatment. By the method, a film can be formed that uses a conductive film forming composition with which wiring and an electrode that can be suitably used for electronic devices can be formed easily and inexpensively.

Abstract: A composition for forming a high-quality tantalum film which is advantageously used as an capacitor insulating film and a process for forming the high-quality tantalum film. The composition for forming a tantalum oxide film, which comprises at least one tantalum compound selected from the group consisting of a reaction product of a compound capable of reacting with a tantalum alkoxide and a tantalum alkoxide and a hydrolyzate of the reaction product, and a solvent, and the process for forming the tantalum oxide film by applying this composition to a substrate and heating it.