Abstract: A mask pattern correction method capable of preventing a position of a pattern from deviating by deformation of a mask due to gravity, a mask production method, a mask, and a production method of a semiconductor device capable of forming a fine pattern with high accuracy are provided.

Abstract: Based on design data 151 and mask characteristic data 152 indicating at least the characteristics of a complementary stencil mask, generating alignment marks, designing membrane shapes, performing PUF division and boundary processing, complementarily dividing the mask, stitching, arranging complementary patterns, verifying pattern shapes, making corrections in the membrane, configuring the mask, verifying exposure, making corrections by inverting the mask, verifying the results of correction, converting the data, and thereby generating the drawing membrane data and drawing pattern data.

Abstract: A complementary division condition determining method and program and a complementary division method able to propose the optimum complementary division conditions for suppressing pattern displacement and mask destruction, wherein an internal stress of a mask is determined based on a displacement of a peripheral mark in a case when forming an opening in the mask and this value is used for first analysis (step ST12), pattern displacement and stress concentration occurring due to openings of split patterns are analyzed based on a first analysis model in a first analysis (step ST13), and a displacement due to external force of the membrane between the split patterns is analyzed in a second analysis (step ST14).

Abstract: A mask pattern correction method capable of preventing a position of a pattern from deviating by deformation of a mask due to gravity, a mask production method, a mask, and a production method of a semiconductor device capable of forming a fine pattern with high accuracy are provided.

Abstract: A stencil mask is disclosed which can be produced by performing pattern correction in a practically applicable comparatively short period of time. When stencil mask pattern data are corrected by a stress analysis, displacement amounts are calculated for those of stencil hole patterns which have a size equal to or greater than a predetermined size. As a result, stencil mask pattern data having corrected patterns are obtained in a comparatively short period of time which can be applied industrially. By producing a stencil mask based on the patterns, a stencil mask in which a desired pattern is formed is obtained.

Abstract: A complementary division condition determining method and program and a complementary division method able to propose the optimum complementary division conditions for suppressing pattern displacement and mask destruction, wherein an internal stress of a mask is determined based on a displacement of a peripheral mark in a case when forming an opening in the mask and this value is used for first analysis (step ST12), pattern displacement and stress concentration occurring due to openings of split patterns are analyzed based on a first analysis model in a first analysis (step ST13), and a displacement due to external force of the membrane between the split patterns is analyzed in a second analysis (step ST14). The order of the first and second analyses is not important.

Abstract: A stencil mask is disclosed which can be produced by performing pattern correction in a practically applicable comparatively short period of time. When stencil mask pattern data are corrected by a stress analysis, displacement amounts are calculated for those of stencil hole patterns which have a size equal to or greater than a predetermined size. As a result, stencil mask pattern data having corrected patterns are obtained in a comparatively short period of time which can be applied industrially. By producing a stencil mask based on the patterns, a stencil mask in which a desired pattern is formed is obtained.

Abstract: An object of the present invention is to accurately verify errors, etc., in programs when corrections of mask data are carried out by the programs. In order to correct the mask data based on predetermined conditions, a method for mask data verification according to the present invention comprises the steps of preparing corrected mask data by using a plurality of programs each of which has a different algorithm, comparing each of corrected mask data which is prepared in the previous step and as a result of the comparison, if there are differences among the corrected mask data, extracting errors which cause problems as mask data from the differences.

Abstract: A stencil mask is disclosed which can be produced by performing pattern correction in a practically applicable comparatively short period of time. When stencil mask pattern data are corrected by a stress analysis, displacement amounts are calculated for those of stencil hole patterns which have a size equal to or greater than a predetermined size. As a result, stencil mask pattern data having corrected patterns are obtained in a comparatively short period of time which can be applied industrially. By producing a stencil mask based on the patterns, a stencil mask in which a desired pattern is formed is obtained.

Abstract: The invention provides a method and an apparatus for producing an exposure mask by which an exposure mask can be produced in a reduced production period and with a high degree of reliability. Data division which does not have an influence on a pattern of an exposure mask is indicated, and indication data which include a predetermined index code is retrieved from layout data to produce a file. Then, the layout data are divided in accordance with the file, and for each of the divided layout data, a corresponding one of processes is selectively performed in accordance with a condition. EB files produced by such processes are unified in accordance with the file to produce a plotting job.

Abstract: An object of the present invention is to accurately verify errors, etc. in programs when corrections of mask data are carried out by the programs. In order to correct the mask data based on predetermined conditions, a method for mask data verification according to the present invention comprises the steps of preparing corrected mask data by using a plurality of programs each of which has a different algorism, comparing each of corrected mask data which is prepared in the previous step and as a result of the comparison, if there are differences among the corrected mask data, extracting errors which cause troubles as mask data from the differences.