Patents by Inventor Isao Hashimoto
Isao Hashimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6635998Abstract: An ion beam processing apparatus and a method of operating an ion source therefore are provided for reducing the frequency of breakdown due to particles, and for increasing an apparatus available time by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning for the apparatus, and so on. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying an acceleration electrode with a positive potential to extract an ion beam, and a deceleration power supply for applying a deceleration electrode with a negative potential to prevent ions from flowing into the ion source.Type: GrantFiled: October 2, 2002Date of Patent: October 21, 2003Assignee: Hitachi, Ltd.Inventors: Shigeru Tanaka, Isao Hashimoto
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Patent number: 6614190Abstract: A wafer holder for holding a wafer includes a wafer holder base, a wafer fixing part, holder pins, a bearing, a housing, and a coil spring. The wafer fixing part is fixed to an outer circumference of a wafer holder. The holder pins are arranged to face the wafer fixing part. The holder pin is rotatably supported by the bearing. The holder pins are movably supported along the diameter direction of the wafer holder base by the coil spring. In the process of holding a side of the wafer with the holder pins, when force from the wafer works on the holder pins, the holder pins are rotated with a Z axis as a center, thus reducing frictional force between the holder pin and the wafer. Accordingly, it is possible to prevent particle generation from holding an implanting object.Type: GrantFiled: August 28, 2001Date of Patent: September 2, 2003Assignee: Hitachi, Ltd.Inventors: Hiroyuki Tomita, Kazuo Mera, Isao Hashimoto, Yasunori Nakano, Takayoshi Seki
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Publication number: 20030040559Abstract: The present invention provides Pigment Yellow 180 having an excellent transparency produced by using a fine slurry of 5-acetoacetylamino-benzimidazolone as a coupling component when Pigment Yellow 180 is produced by coupling reaction of 5-acetoacetylamino-benzimidazolone and diazo component obtained by diazotization of 1,2-bis(2-aminophenoxy)ethane.Type: ApplicationFiled: August 15, 2002Publication date: February 27, 2003Inventors: Isao Hashimoto, Noboru Tsuda, Hiroshi Ohsawa, Tomonori Okazaki, Manabu Shiga, Kohei Ohtsuki
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Patent number: 6521734Abstract: The invention relates to a low-density polyethylene resin for laminates, a composition thereof, and a laminate and production method therefor. The low-density polyethylene resin is one obtainable by a high pressure radical polymerization method and has a density of 0.910 to 0.935 g/cm3, a melt flow rate of 0.1 to 300 g/10 min., and a terminal vinyl group number of 0.4 or more per 1,000 carbon atoms. According to the invention, a laminate having high interlayer adhesion strength can be obtained also by low-temperature, high-speed molding so that the occurrence of smoking and odor can be prevented. Also, the resin is excellent in productivity and economics. Further, the resin is excellent in productivity and economics because it can be readily made thinner. The laminate is suitable for application to, for example, food wrapping materials, containers, etc.Type: GrantFiled: March 30, 2000Date of Patent: February 18, 2003Assignee: Japan Polyolefins Co., Ltd.Inventors: Takumi Araki, Isao Hashimoto, Toshio Taka
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Publication number: 20030030009Abstract: An ion beam processing apparatus and a method of operating an ion source therefor are provided for reducing the frequency of breakdown due to particles, and for increasing an apparatus available time by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning for the apparatus, and so on. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying an acceleration electrode with a positive potential to extract an ion beam, and a deceleration power supply for applying a deceleration electrode with a negative potential to prevent ions from flowing into the ion source.Type: ApplicationFiled: October 2, 2002Publication date: February 13, 2003Applicant: Hitachi, Ltd.Inventors: Shigeru Tanaka, Isao Hashimoto
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Patent number: 6515426Abstract: An ion beam processing apparatus and a method of operating an ion source therefore are provided for reducing the frequency of breakdown due to particles, and for increasing the time that an apparatus can be made available by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying a positive potential to the acceleration electrode in order to extract an ion beam, and a deceleration power supply for applying a negative potential to the deceleration electrode ion order to prevent ions from flowing into the ion source.Type: GrantFiled: December 13, 1999Date of Patent: February 4, 2003Assignee: Hitachi, Ltd.Inventors: Shigeru Tanaka, Isao Hashimoto
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Publication number: 20020146582Abstract: A high-quality protective film for a dry film resist is provided. A film of a polyethylene is used as the protective film, the polyethylene being prepared by pressurizing ethylene with use of an ultra-high pressure compressor and then polymerizing the ethylene at a reaction temperature of 190° to 300° C. and a reaction pressure of not lower than 167 MPa in the presence of a radical polymerization initiator, or by pressuring ethylene with use of an ultra-high pressure compressor and then polymerizing the ethylene at a reaction temperature of 190° to 300° C. in the presence of a radical polymerization initiator while allowing a radical polymerization inhibitor to be present in the reaction system.Type: ApplicationFiled: December 13, 2000Publication date: October 10, 2002Applicant: JAPAN POLYOLEFINS CO. LTD.Inventors: Katsuaki Tsutsumi, Isao Hashimoto
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Publication number: 20020105277Abstract: A wafer holder for holding a wafer includes a wafer holder base, a wafer fixing part, holder pins, a bearing, a housing, and a coil spring. The wafer fixing part is fixed to an outer circumference of a wafer holder. The holder pins are arranged to face the wafer fixing part. The holder pin is rotatably supported by the bearing. The holder pins are movably supported along the diameter direction of the wafer holder base by the coil spring. In the process of holding a side of the wafer with the holder pins, when force from the wafer works on the holder pins, the holder pins are rotated with a Z axis as a center, thus reducing frictional force between the holder pin and the wafer. Accordingly, it is possible to prevent particle generation from holding an implanting object.Type: ApplicationFiled: August 28, 2001Publication date: August 8, 2002Inventors: Hiroyuki Tomita, Kazuo Mera, Isao Hashimoto, Yasunori Nakano, Takayoshi Seki
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Patent number: 6332947Abstract: A plasma processing apparatus is provided with at least one waveguide portion for introducing microwaves, an electron heating space chamber formed on a downstream side with respect to a dielectric body in the waveguide portion, and a plasma generating space chamber coupled with the electron heating space chamber. A first static magnetic field generating device surrounds the electron heating space chamber using permanent magnets, producing a strong magnetic field exceeding an electron cyclotron resonance magnetic field strength along a propagation direction of the microwave in the electron heating space chamber and in a microwave leading-out portion of the dielectric body, and forming a cusped magnetic field.Type: GrantFiled: February 5, 1999Date of Patent: December 25, 2001Assignee: Hitachi, Ltd.Inventors: Satoshi Ichimura, Tadashi Sato, Isao Hashimoto
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Patent number: 6320321Abstract: In order to uniformly neutralize a large current and a large diameter ion beam so as to irradiate an ion beam having a reduced beam divergence on a process target, an ion beam processing apparatus comprises an ion source for producing a processing plasma, a processing chamber as a vacuum chamber for accommodating a process target, an extract electrode for extracting an ion beam so as to irradiate on said process target, an annular electrode disposed in said processing chamber for forming an annular magnetic field therein, through which said ion beam is irradiated on said process, and a wave guide for introducing microwave through an opening provided on a wall forming said processing chamber, into said annular magnetic field.Type: GrantFiled: January 2, 2001Date of Patent: November 20, 2001Assignee: Hitachi, Ltd.Inventors: Satoshi Ogura, Shotaro Ooishi, Isao Hashimoto, Satoshi Ichimura
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Publication number: 20010005119Abstract: In order to uniformly neutralize a large current and a large diameter ion beam so as to irradiate an ion beam having a reduced beam divergence on a process target, an ion beam processing apparatus comprises an ion source for producing a processing plasma, a processing chamber as a vacuum chamber for accommodating a process target, an extract electrode for extracting an ion beam so as to irradiate on said process target, an annular electrode disposed in said processing chamber for forming an annular magnetic field therein, through which said ion beam is irradiated on said process, and a wave guide for introducing microwave through an opening provided on a wall forming said processing chamber, into said annular magnetic field.Type: ApplicationFiled: January 2, 2001Publication date: June 28, 2001Applicant: Hitachi, Ltd.Inventors: Satoshi Ogura, Shotaro Ooishi, Isao Hashimoto, Satashi Ichimura
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Patent number: 6251218Abstract: The invention aims at reducing the movement of an operator to improve the operability. A vacuum chamber door is provided on the front side of a vacuum chamber, and sample holders are connected to the vacuum chamber door through a rotation shaft and a disk. An ion source is detachably mounted on the right side of the vacuum chamber, and a control panel is provided on the left side of the vacuum chamber. The vacuum chamber door is supported by a linearly reciprocally-moving mechanism so as to be drawn away from the vacuum chamber. An operation surface of the vacuum chamber door and an operation surface of the control panel are disposed substantially in a common plane.Type: GrantFiled: August 9, 1999Date of Patent: June 26, 2001Assignee: Hitachi, Ltd.Inventors: Tatsuya Fujisawa, Shotaro Ooishi, Hisao Oonuki, Isao Hashimoto
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Patent number: 6184625Abstract: In order to uniformly neutralize a large current and a large diameter ion beam so as to irradiate an ion beam having a reduced beam divergence on a process target, an ion beam processing apparatus comprises an ion source for producing a processing plasma, a processing chamber as a vacuum chamber for accommodating a process target, an extract electrode for extracting an ion beam so as to irradiate on said process target, an annular electrode disposed in said processing chamber for forming an annular magnetic field therein, through which said ion beam is irradiated on said process, and a wave guide for introducing microwave through an opening provided on a wall forming said processing chamber, into said annular magnetic field.Type: GrantFiled: June 8, 1999Date of Patent: February 6, 2001Assignee: Hitachi, Ltd.Inventors: Satoshi Ogura, Shotaro Ooishi, Isao Hashimoto, Satoshi Ichimura
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Patent number: 6104025Abstract: An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.Type: GrantFiled: May 19, 1999Date of Patent: August 15, 2000Assignee: Hitachi, Ltd.Inventors: Katsumi Tokiguchi, Takayoshi Seki, Kensuke Amemiya, Yasuo Yamashita, Kazuo Mera, Isao Hashimoto, Keiji Arimatsu
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Patent number: 6037388Abstract: A polymerization initiator composition comprising 100 parts by weight of an organic boron compound (A) and 10 to 150 parts by weight of an aprotic solvent (B) having a boiling point of 30 to 150.degree. C.; and a dental or surgical adhesive composition containing the above polymerization initiator composition.Type: GrantFiled: July 6, 1998Date of Patent: March 14, 2000Assignee: Sun Medical Co LtdInventors: Isao Hashimoto, Masami Arata, Weiping Zeng
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Patent number: 5961773Abstract: A plasma processing apparatus is provided with at least one waveguide portion for introducing microwaves, an electron heating space chamber formed on a downstream side with respect to a dielectric body in the waveguide portion, and a plasma generating space chamber coupled with the electron heating space chamber. A first static magnetic field generating device surrounds the electron heating space chamber using permanent magnets, producing a strong magnetic field exceeding an electron cyclotron resonance magnetic field strength along a propagation direction of the microwave in the electron heating space chamber and in a microwave leading-out portion of the dielectric body, and forming a cusped magnetic field.Type: GrantFiled: March 25, 1997Date of Patent: October 5, 1999Assignee: Hitachi, Ltd.Inventors: Satoshi Ichimura, Tadashi Sato, Isao Hashimoto
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Patent number: 5945681Abstract: An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.Type: GrantFiled: March 27, 1997Date of Patent: August 31, 1999Assignee: Hitachi, Ltd.Inventors: Katsumi Tokiguchi, Takayoshi Seki, Kensuke Amemiya, Yasuo Yamashita, Kazuo Mera, Isao Hashimoto, Keiji Arimatsu
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Patent number: 5944513Abstract: An apparatus for manufacturing cement clinker is disclosed in which raw material powder of cement pre-heated and partially pre-calcined by a pre-heating unit such as a suspension pre-heater (or a provided pre-calciner') is charged into a granulating furnace as to be granulated, thus-obtained granulated material is charged into a sintering furnace as to be sintered, and the sintered material is cooled and recovered by a cooling unit, the apparatus having a granulating furnace so that the granulating performance of the granulating furnace is improved.Type: GrantFiled: June 6, 1995Date of Patent: August 31, 1999Assignees: Kawasaki Jukogyo Kabushiki Kaisha, Sumitomo Cement Co., Ltd.Inventors: Norio Yokota, Nichitaka Sato, Katsuji Mukai, Toshiyuki Ishinohachi, Hideho Hayashi, Isao Hashimoto, Mikio Murao, Shozo Kanamori, Chikanori Kumagai, Tatsuya Watanabe
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Patent number: 5932883Abstract: In order to implant an ion beam on wafers with low contamination, especially in a large capacity ion implanter for implanting for a long time, a rotating holder 1 shaped like a cylinder or a circular cone is provided, and the wafers 2 are arranged inside of the rotating holder 1 so as to be fixed firmly by a centrifugal force acting on the wafers. Thereby, the wafers are implanted with low contamination, because the periphery of the wafer is not supported by any stopper which may otherwise be sputtered and cause contamination.Type: GrantFiled: July 1, 1997Date of Patent: August 3, 1999Assignee: Hitachi, Ltd.Inventors: Isao Hashimoto, Kazuo Mera
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Patent number: 5866632Abstract: A polymerization initiator composition comprising 100 parts by weight of an organic boron compound (A) and 10 to 150 parts by weight of an aprotic solvent (B) having a boiling point of 30.degree. to 150.degree. C.; and a dental or surgical adhesive composition containing the above polymerization initiator composition.Type: GrantFiled: August 8, 1996Date of Patent: February 2, 1999Assignee: Sun Medical Co., Ltd.Inventors: Isao Hashimoto, Masami Arata, Weiping Zeng