Abstract: A device that can accurately detect clogging of a filter and that has a simple structure is provided. A device for measuring clogging of a filter in an air conditioner (2) having a blower (30) that blows gas (40), (42) through a duct (10) and a filter (20) that is provided in the duct (10) and filters dust floating in the gas, comprises a device (26) for measuring a sound pressure that is provided in the duct (10), a data processor (70) that extracts data on the sound pressure at a specific frequency from the data on the sound pressure that have been measured by means of the device (26) for measuring a sound pressure, and an estimating device (70) that estimates clogging of the filter based on the data on the sound pressure at the specific frequency that have been extracted by means of the data processor (70).

Abstract: A device that can accurately detect clogging of a filter and that has a simple structure is provided. A device for measuring clogging of a filter in an air conditioner (2) having a blower (30) that blows gas (40), (42) through a duct (10) and a filter (20) that is provided in the duct (10) and filters dust floating in the gas, comprises a device (26) for measuring a sound pressure that is provided in the duct (10), a data processor (70) that extracts data on the sound pressure at a specific frequency from the data on the sound pressure that have been measured by means of the device (26) for measuring a sound pressure, and an estimating device (70) that estimates clogging of the filter based on the data on the sound pressure at the specific frequency that have been extracted by means of the data processor (70).

Abstract: An apparatus for manufacturing semiconductors is provided by which adhesion of moisture to a wafer in an EFEM is easily prevented. The apparatus 1 for manufacturing the semiconductors comprises processing equipment 30 that processes a wafer 90, a FOUP 40 that supplies the wafer 90 and that houses the wafer 90 that has been processed, an EFEM 10 that transfers the wafer 90 between the FOUP 40 and the processing equipment 30, a fan and filter unit 20 that sends an airflow 72 from above to the EFEM 10, an ultrasonic oscillator 52 that generates high-frequency power, and a vibrator 54 that generates ultrasonic waves 80 by using the high-frequency power that is generated by the ultrasonic oscillator 52 and that applies the ultrasonic waves 80 to the wafer 90 that is transported in the EFEM 10 and that has been processed.

Abstract: A manufacturing apparatus for a semiconductor device comprises: a clean room for installing a plurality of semiconductor manufacturing and processing apparatuses; an external air cleaning device connected to a supply port of the clean room for supplying a cleaned-up outside air into the clean room; a common air duct section installed in the clean room; a first air cleaning and ventilating means connected to said common air duct section for cleaning and ventilating a part of the cleaned-up outside air to the common air duct section; individual air duct section branched off from the common air duct section and connected to each of said semiconductor manufacturing and processing apparatuses; and a second air cleaning and ventilating means interposed between the individual air duct section and each of the semiconductor manufacturing and processing apparatuses for cleaning and ventilating the air to be supplied to each of the semiconductor manufacturing and processing apparatuses.

Abstract: A manufacturing apparatus for a semiconductor device comprises: a clean room for installing a plurality of semiconductor manufacturing and processing apparatuses; an external air cleaning device connected to a supply port of the clean room for supplying a cleaned-up outside air into the clean room; a common air duct section installed in the clean room; a first air cleaning and ventilating means connected to said common air duct section for cleaning and ventilating a part of the cleaned-up outside air to the common air duct section; individual air duct section branched off from the common air duct section and connected to each of said semiconductor manufacturing and processing apparatuses; and a second air cleaning and ventilating means interposed between the individual air duct section and each of the semiconductor manufacturing and processing apparatuses for cleaning and ventilating the air to be supplied to each of the semiconductor manufacturing and processing apparatuses.

Abstract: A manufacturing apparatus for a semiconductor device comprises: a clean room for installing a plurality of semiconductor manufacturing and processing apparatuses; an external air cleaning device connected to a supply port of the clean room for supplying a cleaned-up outside air into the clean room; a common air duct section installed in the clean room; a first air cleaning and ventilating means connected to said common air duct section for cleaning and ventilating a part of the cleaned-up outside air to the common air duct section; individual air duct section branched off from the common air duct section and connected to each of said semiconductor manufacturing and processing apparatuses; and a second air cleaning and ventilating means interposed between the individual air duct section and each of the semiconductor manufacturing and processing apparatuses for cleaning and ventilating the air to be supplied to each of the semiconductor manufacturing and processing apparatuses.

Abstract: A manufacturing apparatus for a semiconductor device comprises: a clean room for installing a plurality of semiconductor manufacturing and processing apparatuses; an external air cleaning device connected to a supply port of the clean room for supplying a cleaned-up outside air into the clean room; a common air duct section installed in the clean room; a first air cleaning and ventilating means connected to said common air duct section for cleaning and ventilating a part of the cleaned-up outside air to the common air duct section; individual air duct section branched off from the common air duct section and connected to each of said semiconductor manufacturing and processing apparatuses; and a second air cleaning and ventilating means interposed between the individual air duct section and each of the semiconductor manufacturing and processing apparatuses for cleaning and ventilating the air to be supplied to each of the semiconductor manufacturing and processing apparatuses.

Abstract: The present invention provides a method for plasma control, in which an electric field is generated in the direction perpendicular to the surface of an object to be processed in plasma atmosphere generated in a processing chamber and another electric field is generated in the direction parallel to the surface, and the direction of ion or electron in plasma atmosphere is controlled by controlling the composite electric field composed of both the electric fields. The invention provides also an apparatus for plasma control provided with a perpendicular electric field generating means for generating an electric field in the direction perpendicular to the surface of the object, and a parallel electric field generating means for generating an electric field in the direction parallel to the surface of the object.

Abstract: The present invention provides a method for plasma control, in which an electric field is generated in the direction perpendicular to the surface of an object to be processed in plasma atmosphere generated in a processing chamber and another electric field is generated in the direction parallel to the surface, and the direction of ion or electron in plasma atmosphere is controlled by controlling the composite electric field composed of both the electric fields. The invention provides also an apparatus for plasma control provided with a perpendicular electric field generating means for generating an electric field in the direction perpendicular to the surface of the object, and a parallel electric field generating means for generating an electric field in the direction parallel to the surface of the object.

Abstract: A plasma treatment method and system allowing the plasma intensity to be controllably distributed perpendicularly to the inner wall and ensuring effective and uniform treatment in the case of executing plasma cleaning, plasma CVD, RIE or the like. In the plasma treatment where plasma is generated within a chamber 1 for plasma treatment, magnetic field 31 is applied perpendicularly to the inner wall of the chamber to produce plasma whose intensity is directed perpendicularly to the inner wall of the chamber or in parallel with the surface to be treated. Further, the magnetic filed 31 rendered into a revolving field 32 may be applied to rotate the plasma to accomplish a uniform and effective treatment.