Abstract: A piezoelectric material for a combustion pressure sensor, a method for producing the piezoelectric material, and a combustion pressure sensor using the piezoelectric material are provided. The piezoelectric material of the present invention includes a single crystal containing Ca, Ta, an element M (M is Al or Ga), Si, and O, the single crystal has the same crystal structure as the crystal structure of langasite represented by La3Ga5SiO14, and at least the content of the element M is insufficient for the stoichiometric composition represented by Ca3TaM3Si2O14. Preferably, in a case where the element M is Ga, each content of the Ca and the Si is excessive for the stoichiometric composition, and in a case where the element M is Al, the content of the Ca is excessive for the stoichiometric composition, and the content of the Ta is insufficient for the stoichiometric composition.

Abstract: The present invention makes it possible to, even when a stainless steel is adopted in a diaphragm: prevent the diaphragm and a strain sensor from exfoliating from each other; be hardly susceptible to the influence of temperature in an operating environment; not allow the sensitivity of a pressure sensor to be dominated only by the mechanical characteristic of a material constituting the diaphragm; and increase the degree of freedom in design of members constituting the pressure sensor.

Abstract: An Object of the invention is to obtain an all solid lithium battery having an excellent output performance. To achieve the object, a sulfide based solid electrolyte is used as an electrolyte; an oxide containing lithium, a metal element that acts as a redox couple, and a metal element that forms an electron-insulating oxide is used as a cathode active material; and the concentration of the metal element that forms the electron-insulating oxide on the surface of the cathode active material (oxide) that is in contact with the sulfide solid electrolyte is made high.

Abstract: A piezoelectric material for a combustion pressure sensor, a method for producing the piezoelectric material, and a combustion pressure sensor using the piezoelectric material are provided. The piezoelectric material of the present invention includes a single crystal containing Ca, Ta, an element M (M is Al or Ga), Si, and O, the single crystal has the same crystal structure as the crystal structure of langasite represented by La3Ga5SiO14, and at least the content of the element M is insufficient for the stoichiometric composition represented by Ca3TaM3Si2O14. Preferably, in a case where the element M is Ga, each content of the Ca and the Si is excessive for the stoichiometric composition, and in a case where the element M is Al, the content of the Ca is excessive for the stoichiometric composition, and the content of the Ta is insufficient for the stoichiometric composition.

Abstract: There is provided a pressure sensor which includes: a diaphragm having an inside surface facing to a fluid-tight space, the diaphragm including a diaphragm film that is part of the inside surface and deformable in response to a pressure application, and a diaphragm film support that is part of the inside surface and constitutes a periphery of the diaphragm film; a strain sensor bonded to the inside surface so as to lie partially on the periphery and having plural strain gauges thereon; and a depression formed on the inside surface, when defining an x-direction oriented from center of the inside surface to a position bonded of the strain sensor and a y-direction perpendicular to the x-direction on the inside surface, the depression extending a certain length in the y-direction, the depression being adjacent to or a certain distance apart from an edge of the strain sensor in the y-direction.

Abstract: The present invention makes it possible to, even when a stainless steel is adopted in a diaphragm: prevent the diaphragm and a strain sensor from exfoliating from each other; be hardly susceptible to the influence of temperature in an operating environment; not allow the sensitivity of a pressure sensor to be dominated only by the mechanical characteristic of a material constituting the diaphragm; and increase the degree of freedom in design of members constituting the pressure sensor.

Abstract: There is provided a pressure sensor which includes: a diaphragm having an inside surface facing to a fluid-tight space, the diaphragm including a diaphragm film that is part of the inside surface and deformable in response to a pressure application, and a diaphragm film support that is part of the inside surface and constitutes a periphery of the diaphragm film; a strain sensor bonded to the inside surface so as to lie partially on the periphery and having plural strain gauges thereon; and a depression formed on the inside surface, when defining an x-direction oriented from center of the inside surface to a position bonded of the strain sensor and a y-direction perpendicular to the x-direction on the inside surface, the depression extending a certain length in the y-direction, the depression being adjacent to or a certain distance apart from an edge of the strain sensor in the y-direction.

Abstract: An Object of the invention is to obtain an all solid lithium battery having an excellent output performance. To achieve the object, a sulfide based solid electrolyte is used as an electrolyte; an oxide containing lithium, a metal element that acts as a redox couple, and a metal element that forms an electron-insulating oxide is used as a cathode active material; and the concentration of the metal element that forms the electron-insulating oxide on the surface of the cathode active material (oxide) that is in contact with the sulfide solid electrolyte is made high.

Abstract: A zinc oxide semiconductor has a zinc oxide-based laminated structure including two layers of a zinc oxide layer with a lattice volume of Va and a donor concentration of Na, and a zinc oxide or zinc oxide solid solution layer with a lattice volume of Vb and a donor concentration of Nb. The relationships of Va<Vb and Na>Nb are satisfied. The layer with the lattice volume Va serves as a charge-supplying layer and the layer with the lattice volume Vb serves as a charge-receiving layer in the laminated structure. The charge is transferred from the layer serving as the charge-supplying layer to the layer serving as the charge-receiving layer even when no external electric field is applied to the laminated structure. A charge depletion layer is formed in the charge-supplying layer due to charge transfer from the charge-supplying layer to the charge-receiving layer.

Abstract: The present invention can provide an Mg-containing ZnO mixed single crystal wherein the mixed single crystal comprises an Mg-containing ZnO semiconductor having a bandgap (Eg) of 3.30<Eg?3.54 eV, and has a film thickness of 5 ?m or less. The present invention can provide a method for producing an Mg-containing ZnO mixed single crystal by liquid phase epitaxial growth, wherein the method comprises: mixing and melting ZnO and MgO as solutes and PbO and Bi2O3 (or PbF2 and PbO) as solvents; and putting a substrate into direct contact with the obtained melt solution, thereby growing the Mg-containing ZnO mixed single crystal on the substrate.

Abstract: A ZnO single crystal can be grown on a seed crystal substrate using a liquid phase epitaxial growth method by mixing and melting ZnO as a solute and a solvent, bringing the crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. A self-supporting Mg-containing ZnO mixed single crystal wafer can be obtained as follows. A Mg-containing ZnO mixed single crystal is grown using a liquid phase epitaxial growth method by mixing and melting ZnO and MgO forming a solute and a solvent, then bringing a seed crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. Then, the self-supporting Mg-containing ZnO mixed single crystal wafer is obtained by removing the substrate by polishing or etching, and polishing or etching a surface, on the side of ?c plane, of the single crystal grown by the liquid phase epitaxial growth method.

Abstract: The present invention can provide an Mg-containing ZnO mixed single crystal wherein the mixed single crystal comprises an Mg-containing ZnO semiconductor having a bandgap (Eg) of 3.30?Eg?3.54 eV, and has a film thickness of 5 ?m or less. The present invention can provide a method for producing an Mg-containing ZnO mixed single crystal by liquid phase epitaxial growth, wherein the method comprises: mixing and melting ZnO and MgO as solutes and PbO and Bi2O3 (or PbF2 and PbO) as solvents; and putting a substrate into direct contact with the obtained melt solution, thereby growing the Mg-containing ZnO mixed single crystal on the substrate.

Abstract: An acceleration sensor device comprising: an acceleration sensor chip comprising a mass portion, a support frame and flexible arms having piezo-resistors on their top surfaces; and an upper regulation plate having an IC circuit, which is larger in area than the support frame, bonded to a top surface of the support frame; wherein the acceleration sensor chip and the upper regulation plate are placed in a protection case with a lid. The regulation plate protrudes from outside walls of the support frame to partition the space accommodating the chip in the protection case by the protrusion and to prevent air circulation above and below the regulation plate, so that a temperature rise due to the IC circuit among the piezo-resistors provided on the top surfaces of the flexible arms is kept uniform to reduce offset voltage.

Abstract: A fall detecting method and a device for detecting a fall with high accuracy even when an object touches a human or a thing while falling. The fall detecting device has an output detecting part for generating an acceleration detection output after comparing the magnitude of acceleration detected by a three-axis acceleration sensor with a certain threshold, an output interruption correcting part for generating an output interruption corrected acceleration output which is corrected for an interruption when a fall acceleration output recovers within a first predetermined time after the fall acceleration output interrupts, and an output continuation time judging part for generating a fall judgment output when the output interruption corrected acceleration output continues for a second predetermined time longer than the first predetermined time.

Abstract: The present invention relates to a zinc oxide phosphor characterized by emitting visible light with a broad emission spectrum close to white, and a process for producing the same. A powder prepared by adding a plurality of additives to zinc oxide and heat-treating the resulting mixture is further hydrogenated to improve the luminous efficiency of the zinc oxide phosphor. The zinc oxide phosphor providing a broad emission spectrum covering a wavelength range over substantially the entire visible region can be applied to a white diode, a white vacuum fluorescent display, and a fluorescent paint.

Abstract: An acceleration sensor device comprising: an acceleration sensor chip comprising a mass portion, a support frame and flexible arms having piezo-resistors on their top surfaces; and an upper regulation plate having an IC circuit, which is larger in area than the support frame, bonded to a top surface of the support frame; wherein the acceleration sensor chip and the upper regulation plate are placed in a protection case with a lid. The regulation plate protrudes from outside walls of the support frame to partition the space accommodating the chip in the protection case by the protrusion and to prevent air circulation above and below the regulation plate, so that a temperature rise due to the IC circuit among the piezo-resistors provided on the top surfaces of the flexible arms is kept uniform to reduce offset voltage.

Abstract: A fall detecting method and a device for detecting a fall with high accuracy even when an object touches a human or a thing while falling. The fall detecting device comprises output detecting means for generating an acceleration detection output after comparing the magnitude of acceleration detected by a three-axis acceleration sensor with a certain threshold, output interruption correcting means for generating an output interruption corrected acceleration output which is corrected for an interruption when a fall acceleration output recovers within a first predetermined time after the fall acceleration output interrupts, and output continuation time judging means for generating a fall judgment output when the output interruption corrected acceleration output continues for a second predetermined time longer than the first predetermined time.

Abstract: Disclosed are a zinc oxide resistor structure, and methods of forming a glass layer and a resistor, which are required for producing the resistor structure. The zinc oxide resistor comprises zinc oxide grains and an oxide glass layer which contains bismuth and boron and intervenes between the zinc oxide grains. The oxide glass layer residing between the zinc oxide grains changes the electric properties between the grains to achieve a higher resistance and a non-ohmic characteristic of a voltage-dependent resistance value in the resistor. This non-ohmic characteristic can be applied, particularly, to a non-ohmic device to be compatible with a low-voltage operation. Differently from conventional resistors, the oxide glass layer intervening between the zinc oxide grains can achieve an enhanced mechanical strength of a junction in the device.

Abstract: The present invention relates to a zinc oxide phosphor characterized by emitting visible light with a broad emission spectrum close to white, and a process for producing the same. A powder prepared by adding a plurality of additives to zinc oxide and heat-treating the resulting mixture is further hydrogenated to improve the luminous efficiency of the zinc oxide phosphor. The zinc oxide phosphor providing a broad emission spectrum covering a wavelength range over substantially the entire visible region can be applied to a white diode, a white vacuum fluorescent display, and a fluorescent paint.

Abstract: A semiconductor acceleration sensor is disclosed which has a small difference in acceleration detection sensitivity among X, Y, and Z axes and a high detection sensitivity. The acceleration sensor has a mass portion in its center, a support frame surrounding the mass portion, and a plurality of flexible arms connecting the mass portion and the support frame. The flexible arm has wider portions on both ends and a narrower portion between the wider portions. Piezo resistors are restrictedly provided within a top surface region of the wider portion of the flexible arm, and through holes connecting metal wires and the piezo resistors are disposed on the mass portion/support frame. The plurality of flexible arms are symmetric with respect to the center of the mass portion, and each of the flexible arms is symmetric with respect to the center line of the flexible arm.