Patents by Inventor Isao Sakai
Isao Sakai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10621373Abstract: A mobile storage device includes first and second memory regions in one or more semiconductor memory devices, a positioning system configured to generate positional information indicating a position of the mobile storage device, and a controller. The controller is configured to allow access to the first memory region and prohibit access to the second memory region when the positional information indicates that the position of the mobile storage device is within a first area, and prohibit access to the first memory region and allow access to the second memory region when the positional information indicates that the position of the memory storage device is within a second area, which is different from and does not overlap with the first area.Type: GrantFiled: February 21, 2017Date of Patent: April 14, 2020Assignee: Toshiba Memory CorporationInventors: Makoto Iwai, Teruji Yamakawa, Isao Sakai, Koki Kanda
-
Publication number: 20170262647Abstract: A mobile storage device includes first and second memory regions in one or more semiconductor memory devices, a positioning system configured to generate positional information indicating a position of the mobile storage device, and a controller. The controller is configured to allow access to the first memory region and prohibit access to the second memory region when the positional information indicates that the position of the mobile storage device is within a first area, and prohibit access to the first memory region and allow access to the second memory region when the positional information indicates that the position of the memory storage device is within a second area, which is different from and does not overlap with the first area.Type: ApplicationFiled: February 21, 2017Publication date: September 14, 2017Inventors: Makoto IWAI, Teruji YAMAKAWA, Isao SAKAI, Koki KANDA
-
Publication number: 20160062435Abstract: A memory system includes a nonvolatile memory, a thermoelectric device configured to generate power from heat, a main power supply for the nonvolatile memory, a backup power supply for the nonvolatile memory, the backup power supply including a capacitor, and a power supply controller configured to supply the power generated by the thermoelectric device to the capacitor to charge the capacitor.Type: ApplicationFiled: March 3, 2015Publication date: March 3, 2016Inventors: Nobuyuki ARAKAWA, Isao SAKAI, Tomoki TANAKA
-
Patent number: 7501207Abstract: The present invention provides a hydrogen absorbing alloy containing as a principal phase at least one phase selected from the group consisting of a second phase having a rhombohedral crystal structure and a first phase having a crystal structure of a hexagonal system excluding a phase having a CaCu5 type structure, wherein a content of a phase having a crystal structure of AB2 type is not higher than 10% by volume including 0% by volume and the hydrogen absorbing alloy has a composition represented by general formula (1) given below: R1-a-bMgaTbNiZ-X-Y-?M1XM2YMn???(1).Type: GrantFiled: April 25, 2007Date of Patent: March 10, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Isao Sakai, Tatsuoki Kohno, Shirou Takeno, Takamichi Inaba, Hideki Yoshida, Masaaki Yamamoto, Hirotaka Hayashida, Shusuke Inada, Hiroshi Kitayama, Motoya Kanda, Fumiyuki Kawashima, Takao Sawa
-
Patent number: 7300720Abstract: The present invention provides a hydrogen absorbing alloy containing as a principal phase at least one phase selected from the group consisting of a second phase having a rhombohedral crystal structure and a first phase having a crystal structure of a hexagonal system excluding a phase having a CaCu5 type structure, wherein a content of a phase having a crystal structure of AB2 type is not higher than 10% by volume including 0% by volume and the hydrogen absorbing alloy has a composition represented by general formula (1) given below: R1-a-bMgaTbNiZ-X-Y-?M1XM2YMn?.Type: GrantFiled: December 1, 2005Date of Patent: November 27, 2007Assignee: Kabushiki Kaisha ToshibaInventors: Isao Sakai, Tatsuoki Kohno, Shirou Takeno, Takamichi Inaba, Hideki Yoshida, Masaaki Yamamoto, Hirotaka Hayashida, Shusuke Inada, Hiroshi Kitayama, Motoya Kanda, Fumiyuki Kawashima, Takao Sawa
-
Publication number: 20070259264Abstract: The present invention provides a hydrogen absorbing alloy containing as a principal phase at least one phase selected from the group consisting of a second phase having a rhombohedral crystal structure and a first phase having a crystal structure of a hexagonal system excluding a phase having a CaCu5 type structure, wherein a content of a phase having a crystal structure of AB2 type is not higher than 10% by volume including 0% by volume and the hydrogen absorbing alloy has a composition represented by general formula (1) given below: R1-a-bMgaTbNiZ-X-Y-?M1XM2YMn???(1)Type: ApplicationFiled: April 25, 2007Publication date: November 8, 2007Inventors: Isao Sakai, Tatsuoki Kohno, Shirou Takeno, Takamichi Inaba, Hideki Yoshida, Masaaki Yamamoto, Hirotaka Hayashida, Shusuke Inada, Hiroshi Kitayama, Motoya Kanda, Fumiyuki Kawashima, Takao Sawa
-
Publication number: 20070190417Abstract: The present invention provides a hydrogen absorbing alloy containing as a principal phase at least one phase selected from the group consisting of a second phase having a rhombohedral crystal structure and a first phase having a crystal structure of a hexagonal system excluding a phase having a CaCu5 type structure, wherein a content of a phase having a crystal structure of AB2 type is not higher than 10% by volume including 0% by volume and the hydrogen absorbing alloy has a composition represented by general formula (1) given below: R1-a-bMgaTbNiZ-X-Y-?M1XM2YMn???(1)Type: ApplicationFiled: April 25, 2007Publication date: August 16, 2007Inventors: Isao Sakai, Tatsuoki Kohno, Shirou Takeno, Takamichi Inaba, Hideki Yoshida, Masaaki Yamamoto, Hirotaka Hayashida, Shusuke Inada, Hiroshi Kitayama, Motoya Kanda, Fumiyuki Kawashima, Takao Sawa
-
Publication number: 20060254678Abstract: The present invention provides a hydrogen absorbing alloy containing as a principal phase at least one phase selected from the group consisting of a second phase having a rhombohedral crystal structure and a first phase having a crystal structure of a hexagonal system excluding a phase having a CaCu5 type structure, wherein a content of a phase having a crystal structure of AB2 type is not higher than 10% by volume including 0% by volume and the hydrogen absorbing alloy has a composition represented by general formula (1) given below: R1-a-bMgaTbNiZ-X-Y-?M1XM2YMn???(1)Type: ApplicationFiled: December 1, 2005Publication date: November 16, 2006Inventors: Isao Sakai, Tatsuoki Kohno, Shirou Takeno, Takamichi Inaba, Hideki Yoshida, Masaaki Yamamoto, Hirotaka Hayashida, Shusuke Inada, Hiroshi Kitayama, Motoya Kanda, Fumiyuki Kawashima, Takao Sawa
-
Patent number: 7005212Abstract: The present invention provides a hydrogen absorbing alloy containing as a principal phase at least one phase selected from the group consisting of a second phase having a rhombohedral crystal structure and a first phase having a crystal structure of a hexagonal system excluding a phase having a CaCu5 type structure, wherein a content of a phase having a crystal structure of AB2 type is not higher than 10% by volume including 0% by volume and the hydrogen absorbing alloy has a composition represented by general formula (1) given below: R1-a-bMgaTbNiZ-X-Y-?M1XM2YMn?.Type: GrantFiled: June 27, 2002Date of Patent: February 28, 2006Assignee: Kabushiki Kaisha ToshibaInventors: Isao Sakai, Tatsuoki Kohno, Shirou Takeno, Takamichi Inaba, Hideki Yoshida, Masaaki Yamamoto, Hirotaka Hayashida, Shusuke Inada, Hiroshi Kitayama, Motoya Kanda, Fumiyuki Kawashima, Takao Sawa
-
Patent number: 6703164Abstract: There is provided a hydrogen-absorbing alloy comprising, as a principal phase, at least one kind of phase selected from the group consisting of a first phase having a hexagonal crystal system (excluding a phase having a CaCu5 type crystal structure) and a second phase having a rhombohedral crystal system, the hydrogen-absorbing alloy having a composition represented by the following general formula (1): R1-a-bMgaTbNiZ-X-Y-&agr;M1XM2YMn&agr; (1) wherein R is at least one kind of element selected from rare earth elements (which include Y), T is at least one element selected from the group consisting of Ca, Ti, Zr and Hf, M1 is at least one element selected from the group consisting of Co and Fe, M2 is at least one element selected from the group consisting of Al, Ga, Zn, Sn, Cu, Si, B, Nb, W, Mo, V, Cr, Ta, Li, P and S, and the atomic ratios of a, b, X, Y, &agr; and Z are respectively a number satisfying the conditions of: 0.15≦a≦0.37, 0≦b≦0.3, 0≦X≦1.3, 0≦Y≦0.Type: GrantFiled: June 4, 2001Date of Patent: March 9, 2004Assignee: Kabushiki Kaisha ToshibaInventors: Hirotaka Hayashida, Masaaki Yamamoto, Hiroshi Kitayama, Shusuke Inada, Isao Sakai, Tatsuoki Kono, Hideki Yoshida, Takamichi Inaba, Motoya Kanda
-
Publication number: 20030096164Abstract: The present invention provides a hydrogen absorbing alloy containing as a principal phase at least one phase selected from the group consisting of a second phase having a rhombohedral crystal structure and a first phase having a crystal structure of a hexagonal system excluding a phase having a CaCu5 type structure, wherein a content of a phase having a crystal structure of AB2 type is not higher than 10% by volume including 0% by volume and the hydrogen absorbing alloy has a composition represented by general formula (1) given below:Type: ApplicationFiled: June 27, 2002Publication date: May 22, 2003Inventors: Isao Sakai, Tatsuoki Kohno, Shirou Takeno, Takamichi Inaba, Hideki Yoshida, Masaaki Yamamoto, Hirotaka Hayashida, Shusuke Inada, Hiroshi Kitayama, Motoya Kanda, Fumiyuki Kawashima, Takao Sawa
-
Publication number: 20010041292Abstract: There is provided a hydrogen-absorbing alloy comprising, as a principal phase, at least one kind of phase selected from the group consisting of a first phase having a hexagonal crystal system (excluding a phase having a CaCu5 type crystal structure) and a second phase having a rhombohedral crystal system, the hydrogen-absorbing alloy having a composition represented by the following general formula (1):Type: ApplicationFiled: June 4, 2001Publication date: November 15, 2001Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hirotaka Hayashida, Masaaki Yamamoto, Hiroshi Kitayama, Shusuke Inada, Isao Sakai, Tatsuoki Kono, Hideki Yoshida, Takamichi Inaba, Motoya Kanda
-
Patent number: 6268084Abstract: There is provided a hydrogen-absorbing alloy comprising, as a principal phase, at least one kind of phase selected from the group consisting of a first phase having a hexagonal crystal system (excluding a phase having a CaCu5 type crystal structure) and a second phase having a rhombohedral crystal system, the hydrogen-absorbing alloy having a composition represented by the following general formula (1): R1−a−bMgaTbNiZ−X−Y−&agr;M1XM2YMn60 (1) wherein R is at least one kind of element selected from rare earth elements (which include Y), T is at least one element selected from the group consisting of Ca, Ti, Zr and Hf, M1 is at least one element selected from the group consisting of Co and Fe, M2 is at least one element selected from the group consisting of Al, Ga, Zn, Sn, Cu, Si, B, Nb, W, Mo, V, Cr, Ta, Li, P and S, and the atomic ratios of a, b, X, Y, &agr; and Z are respectively a number satisfying the conditions of: 0.15≦a≦0.37, 0≦b≦0.3, 0≦X≦1.Type: GrantFiled: December 30, 1999Date of Patent: July 31, 2001Assignee: Kabushiki Kaisha ToshibaInventors: Hirotaka Hayashida, Masaaki Yamamoto, Hiroshi Kitayama, Shusuke Inada, Isao Sakai, Tatsuoki Kono, Hideki Yoshida, Takamichi Inaba, Motoya Kanda
-
Patent number: 6248475Abstract: There is provided a nickel-hydrogen secondary battery which comprises a negative electrode comprising a hydrogen-absorbing alloy represented by the following general formula (A), a positive electrode, and an alkaline electrolyte, and which meets the conditions represented by the formulas (1) and (2), (R1-xMgx)NiyAz (A) wherein R is at least one element selected from rare earth elements (including yttrium), Ca, Zr and Ti, A is at least one element selected from Co, Mn, Fe, V, Cr, Nb, Al, Ga, Zn, Sn, Cu, Si, P and B, and x, y and z are atomic ratio individually defined as 0<x<1, 0≦z≦1.5, 2.5≦y+z<4.5, 3.2≦P≦5.0 (1) 0.9≦Q≦0.2P+0.7 (2) wherein P is a quantity (g) of the hydrogen-absorbing alloy per theoretical capacity 1 Ah of the positive electrode, and Q is a quantity (mL) of the alkaline electrolyte per theoretical capacity 1 Ah of the positive electrode.Type: GrantFiled: November 27, 1998Date of Patent: June 19, 2001Assignee: Kabushiki Kaisha ToshibaInventors: Hirotaka Hayashida, Masaaki Yamamoto, Hiroshi Kitayama, Shusuke Inada, Isao Sakai, Tatsuoki Kono, Hideki Yoshida, Takamichi Inaba, Motoya Kanda
-
Patent number: 6214492Abstract: There is provided a hydrogen-absorbing alloy comprising at least one crystal phase consisting essentially of at least one unit cell which has a laminate structure comprising at least one A2B4 subcell and at least one AB5 subcell, and the aforementioned at least one unit cell satisfying the following formula (1), 0.5<X<1 (1) wherein A is at least one kind of element which is capable of generating heat of formation &Dgr;H (kJ/mol) of less than 20 kJ/mol at the occasion of generating a hydride from one mole of hydrogen at a temperature of 25° C., B is at least one kind of element which is capable of generating heat of formation &Dgr;H (kJ/mol) of not less than 20 kJ/mol at the occasion of generating a hydride from one mole of hydrogen at a temperature of 25° C., and X is a ratio in number of the aforementioned at least one A2B4 subcell to the aforementioned at least one AB5 subcell.Type: GrantFiled: March 17, 1999Date of Patent: April 10, 2001Assignee: Kabushiki Kaisha ToshibaInventors: Tatsuoki Kono, Isao Sakai, Hideki Yoshida, Takamichi Inaba, Masaaki Yamamoto, Shiro Takeno
-
Patent number: 6200705Abstract: A nickel-hydrogen secondary battery having a negative electrode comprising a hydrogen-absorbing alloy containing magnesium, a rare earth element and nickel as essential elements, which is capable of suppressing the self-discharge being occurred under the condition of high temperature storage, or the like. This secondary battery comprises a negative electrode containing a hydrogen-absorbing alloy, a positive electrode containing nickel hydroxide, a separator comprising a non-woven fabric, and an alkaline electrolyte. The hydrogen-absorbing alloy is represented by (R1−xMgx)NiyAz (wherein R is at least one element selected from rare earth elements (including yttrium), Ca, Zr and Ti, A is at least one element selected from Co, Mn, Fe, V, Cr, Nb, Al, Ga, Zn, Sn, Cu, Si, P and B), and x, y and z are atomic ratio individually defined as 0<x<1, 0≦z≦1.5, 2.5≦y+z<4.5).Type: GrantFiled: November 27, 1998Date of Patent: March 13, 2001Assignee: Kabushiki Kaisha ToshibaInventors: Hirotaka Hayashida, Hiroshi Kitayama, Masaaki Yamamoto, Shusuke Inada, Isao Sakai, Tatsuoki Kono, Hideki Yoshida, Takamichi Inaba, Motoya Kanda
-
Patent number: 6130006Abstract: There is provided a hydrogen-absorbing alloy which contains an alloy ingot manufactured by means of a casting or sintering method or a pulverized product of the alloy ingot, and the alloy ingot being represented by the following general formula (1),(Mg.sub.1-a-b R1.sub.a M1.sub.b)Ni.sub.z (1)wherein R1 is at least one element selected from rare earth elements (including Y), M1 is at least one element selected from elements having a larger electronegativity than that of Mg (excluding the elements of R1, Cr, Mn, Fe, Co, Cu, Zn and Ni), and a, b and z are respectively a number satisfying conditions 0.1.ltoreq.a.ltoreq.0.8, 0<b.ltoreq.0.9, 1-a-b>0, and 3.ltoreq.z.ltoreq.3.8.Type: GrantFiled: June 16, 1998Date of Patent: October 10, 2000Assignee: Kabushiki Kaisha ToshibaInventors: Tatsuoki Kohno, Isao Sakai, Masaaki Yamamoto, Motoya Kanda, Hideki Yoshida, Fumiyuki Kawashima, Takao Sawa, Takamichi Inaba, Shusuke Inada, Hirotaka Hayashida, Hiroshi Kitayama
-
Patent number: 6066415Abstract: A hydrogen absorbing electrode containing a hydrogen absorbing alloy consisting mainly of AB.sub.3 type crystal-structure phase and represented by the following formula (I) is providedR(Ni.sub.1-x M.sub.x).sub.z (I)wherein R is at least one element selected from rare earth elements (including Y), M is at least one element selected from the group consisting of Al, Ga, Zn, Sn, Cu, Si, Ag, In, Ti, Zr, Hf, V, Nb, Ta, Cr, Fe, Mn, Mo and W, and x and z are respectively a number satisfying conditions 0.01.ltoreq.x.ltoreq.0.2, and 2.5<z<3.25.Type: GrantFiled: September 11, 1997Date of Patent: May 23, 2000Assignee: Kabushiki Kaisha ToshibaInventors: Isao Sakai, Hideki Yoshida, Masaaki Yamamoto, Motoya Kanda
-
Patent number: 5739600Abstract: Provided is an underwater magnetrostrictive vibration device with reduced signal attenuation and improved in efficiency and sound quality, which has been low due to external noise disturbance.Type: GrantFiled: March 19, 1996Date of Patent: April 14, 1998Assignee: Kabushiki Kaisha ToshibaInventors: Tadahiko Kobayashi, Isao Sakai, Kiyohisa Hinohara
-
Patent number: 5527398Abstract: The magnetostriction alloys of the present invention are composed basically of Tb--Dy-iron which is partially substituted by at least one element selected from the group consisting of Y, La, Ce, Pr, Nd and Sm, and have been grown in the direction of face index <110> or contain Mn and M element (at least one metallic element selected from the group consisting of C, Mg, Al, Si, Ca, Zr, Y, Ga and B. The magnetostrictive alloy may be formed by melting the constituent materials by high frequency induction dissolution. The molten materials are cast in a heated mold having a temperature gradient. The solidified material may be further treated by hot working.Type: GrantFiled: October 22, 1993Date of Patent: June 18, 1996Assignee: Kabushiki Kaisha ToshibaInventors: Tomomi Funayama, Tadahiko Kobayashi, Isao Sakai, Masashi Sahashi