Abstract: A film forming apparatus includes a substrate holding unit holding substrates at intervals; a reaction chamber accommodating the substrate holding unit; a raw material gas supply pipe supplying a raw material gas of a thin film to the substrate; a support unit supporting the reaction chamber; a heating unit being disposed outside the reaction chamber and heating the substrates; a protection pipe including one end portion fixed to the support unit, being extended along an arrangement direction of the substrates between the substrate holding unit and the reaction chamber, and including a temperature measuring unit inserted therein; and a protrusion portion being provided on at least one of an outer surface of the protection pipe and an inner surface of the reaction chamber, and providing a gap between the outer surface of the protection pipe and the inner surface of the reaction chamber.

Abstract: A film forming apparatus includes a substrate holding unit holding substrates at intervals; a reaction chamber accommodating the substrate holding unit; a raw material gas supply pipe supplying a raw material gas of a thin film to the substrate; a support unit supporting the reaction chamber; a heating unit being disposed outside the reaction chamber and heating the substrates; a protection pipe including one end portion fixed to the support unit, being extended along an arrangement direction of the substrates between the substrate holding unit and the reaction chamber, and including a temperature measuring unit inserted therein; and a protrusion portion being provided on at least one of an outer surface of the protection pipe and an inner surface of the reaction chamber, and providing a gap between the outer surface of the protection pipe and the inner surface of the reaction chamber.