Abstract: An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.

Abstract: An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.

Abstract: An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.

Abstract: An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.

Abstract: An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.

Abstract: An electron source capable of suppressing consumption of an electron emission material is provide. The present invention provides an electron source including: an electron emission material; and, an electron emission-suppressing material covering a side surface of the electron emission material, wherein a work function of the electron emission-suppressing material is higher than that of the electron emission material, and a thermal emissivity of the electron emission-suppressing material is lower than that of the electron emission material.

Abstract: The present invention is to provide hollow particles with a low degree of agglomeration and having a high roundness, and a process for producing them. Hollow particles comprising a silicon compound, having an average particle size of from 5 to 65 nm and an average roundness of at least 0.90, and having a shell comprising the silicon compound and having a thickness of from 1 to 20 nm. Further, a method for producing hollow particles, which comprises adding sulfuric acid to a liquid containing spherical organic polymer-silicon compound composite particles having a core comprising an organic polymer and a shell comprising a silicon compound in a medium containing at least 95 mass % of water, followed by heating to carbonize the organic polymer thereby to convert it to a carbide, and subjecting the carbide to decomposition using a liquid oxidizing agent other than sulfuric acid.

Abstract: The present invention is to provide hollow particles with a low degree of agglomeration and having a high roundness, and a process for producing them. Hollow particles comprising a silicon compound, having an average particle size of from 5 to 65 nm and an average roundness of at least 0.90, and having a shell comprising the silicon compound and having a thickness of from 1 to 20 nm. Further, a method for producing hollow particles, which comprises adding sulfuric acid to a liquid containing spherical organic polymer-silicon compound composite particles having a core comprising an organic polymer and a shell comprising a silicon compound in a medium containing at least 95 mass % of water, followed by heating to carbonize the organic polymer thereby to convert it to a carbide, and subjecting the carbide to decomposition using a liquid oxidizing agent other than sulfuric acid.

Abstract: An organic polymer-silicon compound composite particle comprising (a) a core composed of an organic polymer particle containing polyvinyl acetate as a principal component and (b) a shell containing a silicon compound, an average particle size of the organic polymer-silicon compound composite particle being 5 to 150 nm.

Abstract: The present invention is to provide hollow particles with a low degree of agglomeration and having a high roundness, and a process for producing them. Hollow particles comprising a silicon compound, having an average particle size of from 5 to 65 nm and an average roundness of at least 0.90, and having a shell comprising the silicon compound and having a thickness of from 1 to 20 nm. Further, a method for producing hollow particles, which comprises adding sulfuric acid to a liquid containing spherical organic polymer-silicon compound composite particles having a core comprising an organic polymer and a shell comprising a silicon compound in a medium containing at least 95 mass % of water, followed by heating to carbonize the organic polymer thereby to convert it to a carbide, and subjecting the carbide to decomposition using a liquid oxidizing agent other than sulfuric acid.

Abstract: A module is provided that has high reliability in the junction between a ceramic circuit board and a heat sink, undergoes small changes in shape and warp of a module structure comprising a ceramic circuit board and a metal heat sink event under a temperature history during power module assembly and power module actual use, eliminates an unfavorableness during power module assembly, and maintains high reliability over a long period of time. A module structure characterized in that in a module member formed by bonding the ceramic circuit board to the metal heat sink via a metal plate (A) the main component of which is aluminum, the metal plate (A) has a thickness of 400 ?m or more and 1,200 ?m or less.

Abstract: A module is provided that has high reliability in the junction between a ceramic circuit board and a heat sink, undergoes small changes in shape and warp of a module structure comprising a ceramic circuit board and a metal heat sink event under a temperature history during power module assembly and power module actual use, eliminates an unfavorableness during power module assembly, and maintains high reliability over a long period of time. A module structure characterized in that in a module member formed by bonding the ceramic circuit board to the metal heat sink via a metal plate (A) the main component of which is aluminum, the metal plate (A) has a thickness of 400 ?m or more and 1,200 ?m or less.

Abstract: A circuit substrate which has a ceramic substrate and an Al circuit comprising Al or an Al alloy bonded to said ceramic substrate via a layer comprising Al and Cu.

Abstract: A circuit substrate which has a ceramic substrate and an Al circuit comprising Al or an Al alloy bonded to said ceramic substrate via a layer comprising Al and Cu.