Abstract: The etching method of one embodiment includes a first step of generating a plasma of a first processing gas containing a fluorocarbon gas and a hydrofluorocarbon gas in a processing container of a plasma processing apparatus, and a second step of generating a plasma of a second processing gas containing a hydrofluorocarbon gas and a nitrogen gas in the processing container. In the method, sequences each including the first step and the second step are performed. The plasma is continuously generated over the execution period for the first step and the execution period for the second step. In the second step, a ratio of the flow rate of a hydrogen gas to the flow rate of the second processing gas is set to be small in a period immediately before the execution period for the first step and a period immediately after the execution period for the first step.

Abstract: The etching method of one embodiment includes a first step of generating a plasma of a first processing gas containing a fluorocarbon gas and a hydrofluorocarbon gas in a processing container of a plasma processing apparatus, and a second step of generating a plasma of a second processing gas containing a hydrofluorocarbon gas and a nitrogen gas in the processing container. In the method, sequences each including the first step and the second step are performed. The plasma is continuously generated over the execution period for the first step and the execution period for the second step. In the second step, a ratio of the flow rate of a hydrogen gas to the flow rate of the second processing gas is set to be small in a period immediately before the execution period for the first step and a period immediately after the execution period for the first step.

Abstract: A thermal processing unit of the invention includes a substrate-holder which can support a plurality of substrates in such a manner that the plurality of substrates are arranged at a predetermined pitch, and a chamber vessel for housing the substrate-holder. The inside of the chamber vessel may be made a vacuum. A gas-introducing slit having a small conductance is provided in one part of a peripheral area of the plurality of substrates held by the substrate-holder. The gas-introducing slit extends in a direction in which the plurality of substrates are arranged and supplies a processing gas for a thermal process into the chamber vessel. A gas-absorbing opening having a large conductance is provided in another part of the peripheral area of the plurality of substrates held by the substrate-holder. The gas-absorbing opening extends in the direction in which the plurality of substrates are arranged. The substrate-holder may be loaded into and unloaded out of the chamber vessel by a loading mechanism.