Abstract: A semiconductor device, including a conductive plate having a front surface that includes a plurality of bonding regions and a plurality of non-bonding regions in peripheries of the bonding regions, a plurality of semiconductor elements mounted on the conductive plate in the bonding regions, and a resin encapsulating therein at least the plurality of semiconductor elements and the front surface of the conductive plate. The conductive plate has, at the front surface thereof in the non-bonding regions, a plurality of holes.

Abstract: A radiation imaging device capable of reducing the number of measurement times of calibration data used in pile up correction while maintaining the accuracy of the pile up correction. The radiation imaging device has a photon counting type detector to output an electric signal corresponding to energy of an incident radiation photon. The radiation imaging device includes: an extraction unit that extracts a component by the number of pile ups from a material spectrum, as a photon energy spectrum, obtained by detecting a radioactive ray transmitted through a calibration member, formed by combining plural basal substances having different radiation attenuation coefficients, with the photon counting type detector; and a synthesis unit that generates a calibrated equivalent spectrum, as a photon energy spectrum to be collated with an imaging spectrum obtained by imaging a subject by synthesizing the components by the number of pile ups based on the imaging spectrum.

Abstract: The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus including at least an n type semiconductor layer and a p+ type semiconductor layer, wherein the n type semiconductor layer includes a crystalline oxide semiconductor (gallium oxide, for example) containing a metal of Group 13 of the periodic table as a main component, and the p+ type semiconductor layer includes a crystalline oxide semiconductor (iridium oxide, for example) containing a metal of Group 9 of the periodic table as a main component.

Abstract: A request processing apparatus includes a selecting section and an outputting section. The selecting section selects, from multiple pieces of photo data obtained through shooting during an event, one or more pieces of photo data consistent with a request accepted before or during the event. The outputting section outputs the one or more pieces of photo data selected by the selecting section.

Abstract: A light source device, a projector, and a chromaticity adjustment method, which are resistant to a change in the color of emitted light even if used for a long period of time, includes: an excitation light source that emits excitation light; a phosphor wheel that is irradiated with excitation light to convert a part of excitation light into fluorescent light and that emits mixed color light including the fluorescent light and a remaining part of excitation light; motor that rotates phosphor wheel; and an adjustment unit that adjusts the rotational frequency of motor so that the chromaticity of mixed color light emitted from phosphor wheel becomes a predetermined value.

Abstract: A light source device includes: a fluorescent rod that contains a fluorescent substance; at least one light-guide element including a first end face, a second end face having a smaller area than that of the first end face, and a side surface portion that reflects incident light from the first end face to condense on the second end face, the second end face being optically joined to a surface of the fluorescent rod except for the emission surface; a plurality of excitation light sources arranged to face the first end face of the light-guide element; and a dichroic film provided on the surface of the fluorescent rod expect for the emission surface and having the properties of transmitting excitation light and reflecting fluorescent light.

Abstract: An erasing unit according to an embodiment of the present disclosure is a unit that performs erasing of information written on a reversible recording medium. This erasing unit includes: a light source section including one or a plurality of laser devices; and a controller that controls the light source section to cause the light source section to emit a smaller number of laser light beams having emission wavelengths than the number of the recording layers included in the reversible recording medium.

Abstract: A semiconductor device including at least one inversion channel region includes an oxide semiconductor film containing a crystal that has a corundum structure at the inversion channel region.

Abstract: A layered structure includes an oxide semiconductor film containing as a major component gallium oxide or a mixed crystal thereof, and an oxide film containing at least one element selected from elements of Group 15 in the periodic table and arranged on the oxide semiconductor film.

Abstract: A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

Abstract: A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; one or more p-type semiconductors; an electrode, the one or more p-type semiconductors that are provided between the n-type semiconductor layer and the electrode, and at least a part of the one or more p-type semiconductors is protruded in the electrode.

Abstract: A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; an electrode; two or more p-type semiconductors that is provided between the n-type semiconductor layer and the electrode, the n-type semiconductor layer containing gallium, a number of the two or more p-type semiconductors that is equal to or more than three, and the two or more p-type semiconductors that are embedded in the n-type semiconductor layer.

Abstract: A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; an electrode; two or more p-type semiconductors provided between the n-type semiconductor layer and the electrode, the n-type semiconductor layer containing a corundum-structured crystallin oxide semiconductor as a major component, a number of the two or more p-type semiconductor that is equal to or more than three, and the two or more p-type semiconductors that are embedded in the n-type semiconductor layer.

Abstract: A product design system according to an embodiment of the present disclosure includes a first transmitting section that uses a look-up table to convert second design image data for which image correction is completed into third design image data of a color space that is represented with a thermochromic material, and transmits the third design image data derived from the conversion to an external apparatus, and a second transmitting section that transmits a decorating request based on fourth design image data that is profile-transformed from the second design image data to a decorating apparatus.

Abstract: An object of this invention is to create an actuator in which the amount of deformation is maintained and no displacement in the reverse direction occurs, even when a constant voltage is continuously applied for a long period of time. As a means for achieving the above object, the invention provides a conductive thin film comprising a polymer gel containing at least one organic molecule selected from the group consisting of electron-donating organic molecules and electron-withdrawing organic molecules, a nano-carbon material, an ionic liquid, and a polymer.

Abstract: The disclosure provides a film forming method that enables to obtain an epitaxial film with reduced defects such as dislocations due to a reduced facet growth industrially advantageously, even if the epitaxial film has a corundum structure. When forming an epitaxial film on a crystal-growth surface of a corundum-structured crystal substrate directly or via another layer, using the crystal substrate having an uneven portion on the crystal-growth surface of the crystal substrate, generating and floating atomized droplets by atomizing a raw material solution including a metal; carrying the floated atomized droplets onto a surface of the crystal substrate by using a carrier gas; and causing a thermal reaction of the atomized droplets in a condition of a supply rate limiting state.

Abstract: A reversible recording medium according to an embodiment of the present disclosure includes a first layer that reversibly changes between an achromatic state and a transparent state, and a second layer that reversibly changes between a chromatic state and a transparent state.

Abstract: As an aspect of an embodiment, a crystal contains a metal oxide containing Ga and Mn and having a corundum structure.

Abstract: A directional coupler includes: a hollow coaxial line including a central conductor forming a main line and an outer conductor surrounding the central conductor and having an opening formed therein; a dielectric substrate covering the opening and provided with film-shaped ground conductors, wherein a film-shaped ground conductor covers a rear surface of the dielectric substrate facing the central conductor via the opening and a film-shaped ground conductor covers a front surface of the dielectric substrate, respectively, and are grounded; and a coupling line provided on the rear surface of the dielectric substrate in a region surrounded by the ground conductor formed on the rear surface and serving as an auxiliary line, wherein the ground conductor formed on the front surface is provided with a conductor-removed portion in which a portion of a conductor film in a region facing the coupling line via the dielectric substrate is removed.

Abstract: The disclosure provides a crystalline oxide film that has reduced defects such as dislocations due to a reduced facet growth. Also, the disclosure provides a crystalline oxide film that is useful for semiconductor devices and has an enhanced crystal quality. A crystalline oxide film, including: an epitaxial layer having a corundum structure, the lateral growth area is substantially free from a facet growth area, a growth direction of the lateral growth area that is c-axis direction or substantially c-axis direction, the lateral growth area including a dislocation line extending to the c-axis direction or substantially c-axis direction, a first crystal oxide and a second crystal oxide bonded to each other, that are crystal-grown in a direction parallel or approximately parallel to the x-axis.