Abstract: Provided is a warp knitting machine capable of irregularities conforming to a pattern in a warp knitted fabric. The warp knitting machine according to an embodiment is a double raschel machine, and includes at least one guide bar GB5 between a pair of jacquard bars at a front side (JB3, JB4), and a pair of jacquard bars at a back side (JB6, JB7).

Abstract: Provided is a warp knitting machine capable of irregularities conforming to a pattern in a warp knitted fabric. The warp knitting machine according to an embodiment is a double raschel machine, and includes at least one guide bar GB5 between a pair of jacquard bars at a front side (JB3, JB4), and a pair of jacquard bars at a back side (JB6, JB7).

Abstract: A cold-shrinkable type rubber insulation sleeve includes a reinforced insulation sleeve, a semiconductive stress-relief cone, an internal semiconductive layer, and an external semiconductive layer. The reinforced insulation sleeve, the semiconductive stress-relief cone, and the internal semiconductive layer are formed by molding, and the external semiconductive layer is formed by coating.

Abstract: A cold-shrinkable type rubber insulation sleeve includes a reinforced insulation sleeve, a semiconductive stress-relief cone, an internal semiconductive layer, and an external semiconductive layer. The reinforced insulation sleeve, the semiconductive stress-relief cone, and the internal semiconductive layer are formed by molding, and the external semiconductive layer is formed by coating.

Abstract: A cold-shrinkable type rubber insulation sleeve includes a reinforced insulation sleeve, a semiconductive stress-relief cone, an internal semiconductive layer, and an external semiconductive layer. The reinforced insulation sleeve, the semiconductive stress-relief cone, and the internal semiconductive layer are formed by molding, and the external semiconductive layer is formed by coating.

Abstract: A cold-shrinkable type rubber sleeve includes an internal semiconductive layer made of a rubber material, a reinforced insulation layer, an external semiconductive layer, and a stress-relief cone at each end of the reinforced insulation layer, and two edge-cut sections. Each edge-cut section is prepared near each of the stress-relief cones by edge-cutting the external semiconductive layer in a direction of a length of the cold-shrinkable type rubber sleeve. The internal semiconductive layer, the reinforced insulation layer, the external semiconductive layer, and the stress-relief cones are molded into one piece that is cylindrical.

Abstract: A method of diametrally expanding an elastic tube (6), which includes the steps of inserting a distal end portion of a expansion member (1) into an elastic tube (6), the expansion member (1) being provided at least at a surface thereof with a solidified layer of a low melting point material, and the distal end portion (4) of the expansion member (1) being tapered, a tip end of which having a diameter which is equal to or smaller than an inner diameter of the elastic tube (6), and moving the elastic tube (6) over the solidified layer to diametrally expand the elastic tube (6), the surface of the solidified layer being made into a low frictional surface due to a melting of the low melting point material.