Abstract: There is provided a light emitting diode fabricating method including: a) forming, on a substrate and via a buffer layer, an epitaxial growth layer that includes a light emitting layer, and forming one electrode on a surface of the epitaxial growth layer; b) joining a supporting substrate to the one electrode; c) removing, by etching, the substrate and the buffer layer; and d) forming another electrode at a region, other than a region where output light is taken-out, at a reverse surface opposite the surface of the epitaxial growth layer on which the one electrode is formed.

Abstract: A coplanar waveguide includes a substrate, a signal line formed on the substrate, a pair of ground conductors formed on the substrate on mutually opposite sides of the signal line, a signal line insulating film disposed between the signal line and the substrate, and a ground conductor insulating film disposed between the pair of ground conductors and the substrate. No corresponding insulating film is present on the substrate between the signal line and the ground conductors. Even if a silicon substrate is used, the attenuation characteristics of the coplanar waveguide are comparable to the attenuation characteristics of coplanar waveguides formed on compound semiconductor substrates.

Abstract: An aspect of the invention provides a heterojunction field effect transistor that comprises: a base; a first GaN channel layer formed on the base; an AlN electron supply layer formed on the first GaN layer, and a second GaN cap layer formed on the AlN layer.

Abstract: A heterojunction field effect transistor includes a laminated body. The laminated body includes a channel layer of GaN, an electron supply layer of AlN or AlxGa1-xN (0.6?x<1) formed on the channel layer, and a cap layer of GaN formed on the electron supply layer.