Abstract: The present invention consists in a semiconductor integrated circuit device characterized in that a circuit programming wiring layer is formed on an insulating film which is provided on a semiconductor substrate, and that a light shielding protective mask material is deposited around the circuit programming wiring layer except a program part thereof, through an insulating film.

Abstract: A method and apparatus for repairing defect portions of a photomask. A complex material from which a light shading material can be deposited is applied over the photomask. A white (blank) defect region is irradiated with a continuous wave laser light beam projected in a slit-like light image to thereby convert the complex material into the shading material. After washing, a half-deposited portion formed in a peripheral portion of the light shading region is further deposited by a post-baking process. Those portions of the light shading film which depart from the desired mask pattern are removed together with black (solid) defect portion originally present in the photomask through irradiation with a pulse laser light beam. The pulse laser is constituted by a Dye-laser, while the continuous wave laser is constituted by an Ar-laser. A specific half-mirror which transmits therethrough Ar-laser light while reflecting Dye-laser light is displaceable provided.

Abstract: Manganese dioxide having high bulk density, high tap density and high activity for use in batteries can be obtained by decomposing an aqueous solution of ammonia complex of manganese at a temperature of 68.degree. C. or higher than roasting the resulting manganese carbonate in an atmosphere of oxygen and 15-85% of steam at a temperature of 275.degree. to 375.degree. C.