Abstract: The present invention provides a method for producing a bonded wafer comprising at least an ion implantation process where at least either hydrogen ions or rare gas ions are implanted into a first wafer from its surface to form a micro bubble layer (implanted layer) in the first wafer, a bonding process where the surface subjected to the ion implantation of the first wafer is bonded to a surface of a second wafer, and a delamination process where the first wafer is delaminated at the micro bubble layer, wherein the ion implantation process is performed in divided multiple steps, and a bonded wafer. Thus, there are provided a method for producing a bonded wafer, which is for reducing micro-voids generated in the ion implantation and delamination method and a bonded wafer free from micro-voids.

Abstract: A method for manufacturing a bonded wafer, in which when a bonded wafer is manufactured using an ion implantation separation method, impurities attached in the ion implantation step can be removed effectively, and less failure called a void is generated on the bonding surface. Impurities such as particles or organic substances attached in ion implantation step (c) are removed using a physical removal method (d). The surface of a first wafer (1) subjected to impurities removal is closely contacted onto the surface of a second wafer (2) for heat treatment (e). The first wafer is separated in a thin-film form at a micro bubble layer (f).

Abstract: A method for manufacturing a bonded wafer, in which when a bonded wafer is manufactured using an ion implantation separation method, impurities attached in the ion implantation step can be removed effectively, and less failure called a void is generated on the bonding surface.

Abstract: In a method for producing a bonded wafer comprising an ion implantation step where at least either hydrogen ions or rare gas ions are implanted into a first wafer from its surface to form a micro bubble layer (implanted layer) in the first wafer, a bonding step wherein the surface subjected to the ion implantation of the first wafer is bonded to a surface of a second wafer, and a delamination step where the bonded first wafer and second wafer are subjected to a heat treatment to delaminate the first wafer at the micro bubble layer, wherein the ion implantation is performed while temperature of the first wafer is maintained at a temperature lower than 20° C. in the ion implantation step.

Abstract: There is disclosed a method of fabricating an SOI wafer wherein an oxide film is formed on at least one of two single crystal silicon wafers; hydrogen ions or rare gas ions are implanted into the upper surface of one of the two silicon wafers in order to form an ion implanted layer; the ion-implanted surface is brought into close contact with the surface of the other silicon wafer via the oxide film; heat treatment is performed to separate a thin film from the silicon wafer with using the ion implanted layer as a delaminating plane to fabricate the SOI wafer having an SOI layer; and then an epitaxial layer is grown on the SOI layer to form a thick SOI layer. There is provided an SOI wafer which has a thick SOI layer with good thickness uniformity and good crystallinity and which is useful for a bipolar device or a power device.

Abstract: The object of the invention is to provide a bonded wafer in which an inferior bonding state of the bonded wafer attained by a hydrogen ion delamination method is reduced, no separation or no void is found at the connecting interface under a superior production characteristic and in a low cost. In a method for manufacturing a bonded wafer by a hydrogen ion delamination method, carbon concentration at a close contacted surface where both wafers are closely contacted from each other is 3-1014 atoms/cm2 or less.

Abstract: There is disclosed a method of fabricating an SOI wafer in which a bond wafer to form a SOI layer and a base wafer to be a supporting substrate are prepared; an oxide film is formed on at least the bond wafer; hydrogen ions or rare gas ions are implanted in the bond wafer via the oxide film in order to form a fine bubble layer (enclosed layer) within the bond wafer; the ion-implanted surface is brought into close contact with the surface of the base wafer; and then heat treatment is performed to separate a thin film from the bond wafer with using the fine bubble layer as a delaminating plane to fabricate the SOI wafer having an SOI layer; and wherein deviation in the thickness of the oxide film formed on the bond wafer is controlled to be smaller than the deviation in the ion implantation depth, and the SOI wafer fabricated thereby. There is provided an SOI wafer which has an SOI layer having improved thickness uniformity.

Abstract: There is disclosed a method of fabricating an SOI wafer wherein an oxide film is formed on at least one of two single crystal silicon wafers; hydrogen ions or rare gas ions are implanted into the upper surface of one of the two silicon wafers in order to form an ion implanted layer; the ion-implanted surface is brought into close contact with the surface of the other silicon wafer via the oxide film; heat treatment is performed to separate a thin film from the silicon wafer with using the ion implanted layer as a delaminating plane to fabricate the SOI wafer having an SOI layer; and then an epitaxial layer is grown on the SOI layer to form a thick SOI layer. There is provided an SOI wafer which has a thick SOI layer with good thickness uniformity and good crystallinity and which is useful for a bipolar device or a power device.

Abstract: There is disclosed a method of fabricating an SOI wafer in which a bond wafer to form a SOI layer and a base wafer to be a supporting substrate are prepared; an oxide film is formed on at least the bond wafer; hydrogen ions or rare gas ions are implanted in the bond wafer via the oxide film in order to form a fine bubble layer (enclosed layer) within the bond wafer; the ion-implanted surface is brought into close contact with the surface of the base wafer; and then heat treatment is performed to separate a thin film from the bond wafer with using the fine bubble layer as a delaminating plane to fabricate the SOI wafer having an SOI layer; and wherein deviation in the thickness of the oxide film formed on the bond wafer is controlled to be smaller than the deviation in the ion implantation depth, and the SOI wafer fabricated thereby. There is provided an SOI wafer which has an SOI layer having improved thickness uniformity.

Abstract: There is disclosed a method of fabricating an SOI wafer in which a bond wafer to form a SOI layer and a base wafer to be a supporting substrate are prepared; an oxide film is formed on at least the bond wafer; hydrogen ions or rare gas ions are implanted in the bond wafer via the oxide film in order to form a fine bubble layer (enclosed layer) within the bond wafer; the ion-implanted surface is brought into close contact with the surface of the base wafer; and then heat treatment is performed to separate a thin film from the bond wafer using the fine bubble layer as a delaminating plane to fabricate the SOI wafer having an SOI layer; and wherein deviation in the thickness of the oxide film formed on the bond wafer is controlled to be smaller than the deviation in the ion implantation depth, and the SOI wafer fabricated thereby. There is provided an SOI wafer which has an SOI layer having improved thickness uniformity.