Abstract: An optical sensor is described herein. By way of example, the optical sensor comprises a first light filter on a first light-receiving surface of an image sensor, and a second light filter on a second light-receiving surface of the image sensor. The second light-receiving surface is on an opposite side of the image sensor from the first light-receiving surface. The characteristics of the first light filter are different than characteristics of the second light filter.

Abstract: An optical sensor is described herein. By way of example, the optical sensor comprises a first light filter on a first light-receiving surface of an image sensor, and a second light filter on a second light-receiving surface of the image sensor. The second light-receiving surface is on an opposite side of the image sensor from the first light-receiving surface. The characteristics of the first light filter are different than characteristics of the second light filter.

Abstract: A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.

Abstract: A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.

Abstract: A photoelectric converter device comprises a semiconductor substrate including a photoelectric converter element formed on its surface, a visible light filter arranged to at least partially cover the surface of the semiconductor substrate, and a support member attached to the surface of the semiconductor substrate. The photoelectric converter device further comprises, in an internal portion, a resin layer which absorbs infrared light. With this arrangement, undesirable influences of infrared light can be reduced.

Abstract: A method for manufacturing a semiconductor integrated device includes steps of forming an integrated circuit element on a semiconductor substrate, forming internal wiring, forming a groove along a scribe line on a back surface of the semiconductor substrate to expose a portion of the internal wiring, forming a metal film covering at least the groove, patterning the metal film to form external wiring and removing the metal film at a bottom portion of the groove, forming a protection film covering the external wiring and the bottom portion of the groove, and separating the semiconductor substrate along the scribe line.

Abstract: A photoelectric converter device comprises a semiconductor substrate including a photoelectric converter element formed on its surface, a visible light filter arranged to at least partially cover the surface of the semiconductor substrate, and a support member attached to the surface of the semiconductor substrate. The photoelectric converter device further comprises, in an internal portion, a resin layer which absorbs infrared light. With this arrangement, undesirable influences of infrared light can be reduced.

Abstract: A plurality of channel separting regions are formed on a substrate with a space therebetween to segment an channel region. A first insulating layer is formed on the substrate, and a polycrystalline silicon layer is formed thereon and is then subject to patterning so as to provide a plurality of first transfer electrodes in the direction crossing the channel separating region. A second insulating layer is formed on the first transfer electrode and on the substrate having been exposed by the patterning, and a second transfer electrodes are formed at a position between the first transfer electrodes on the second insulating layer. By setting the thickness of each transfer electrodes and the each insulating layer to a predetermined value, the interference of the visible light is controlled, and the transparency rate of the visible light is improved.