Abstract: A memory circuit includes a global control circuit, a first local control circuit and a first set of word line post-decoder circuits. The global control circuit is configured to generate a first and second set of global pre-decoder signals and a first set of local address signals. The first local control circuit includes a first set of repeater circuits and a first clock pre-decoder circuit. The first set of repeater circuits is configured to generate a first set of local pre-decoder signals in response to the first set of global pre-decoder signals, and a second set of local pre-decoder signals in response to the second set of global pre-decoder signals. The first clock pre-decoder circuit is configured to generate a first and second set of clock signals. The first set of word line post-decoder circuits is configured to generate a first set of word line signals.

Abstract: A memory circuit includes a global control circuit, a first local control circuit, and a first set of word line post-decoder circuits coupled to a first set of memory cells that is configured to store a first set of data. The global control circuit is configured to generate a first and second set of global pre-decoder signals, and a first set of local address signals. The first local control circuit includes a first set of repeater circuits and a first clock pre-decoder circuit. The first set of repeater circuits is configured to generate a first and second set of local pre-decoder signals in response to the corresponding first and second set of global pre-decoder signals. The first clock pre-decoder circuit is configured to generate a first and second set of clock signals in response to the first set of local address signals and the first clock signal.

Abstract: Systems and methods are provided for a memory device including a first memory array, a local input/output (LIO) circuit, and a global input/output (GIO) circuit. The first memory array includes a memory cell and a local bit line. The LIO circuit is configured to receive a local bit line signal on the local bit line and to generate a global bit line signal on a global bit line based on the local bit line signal. The GIO circuit is coupled to the LIO circuit and is configured to receive the global bit line signal. The GIO circuit comprises a latch circuit including a global bit line signal latch that is configured to latch the global bit line signal, and a booster circuit that is configured to drive the global bit line signal in the GIO circuit based on a previous global bit line signal.

Abstract: A memory circuit includes a global control circuit, a first local control circuit, and a first set of word line post-decoder circuits coupled to a first set of memory cells that is configured to store a first set of data. The global control circuit is configured to generate a first and second set of global pre-decoder signals, and a first set of local address signals. The first local control circuit includes a first set of repeater circuits and a first clock pre-decoder circuit. The first set of repeater circuits is configured to generate a first and second set of local pre-decoder signals in response to the corresponding first and second set of global pre-decoder signals. The first clock pre-decoder circuit is configured to generate a first and second set of clock signals in response to the first set of local address signals and the first clock signal.

Abstract: The claimed subject matter relate to circuits and/or methods, which operate to introduce a variable delay in a write-assist signal to a write driver of an array of SRAM cells. Particularly, a variable delay may be introduced by way of a voltage tracking circuit, which may generate a trigger signal in response to a voltage signal from an array of access devices that replicate access devices of the array of SRAM cells.

Abstract: Briefly, embodiments of claimed subject matter relate to circuits and/or methods, which operate to introduce a variable delay in a write-assist signal to a write driver of an array of SRAM cells. In particular embodiments, a variable delay may be introduced by way of a voltage tracking circuit, which may generate a trigger signal in response to a voltage signal from an array of access devices that replicate access devices of the array of SRAM cells.