Patents by Inventor Ishiang Shih

Ishiang Shih has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10312882
    Abstract: In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies, one for transmitting and the other for receiving. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The invention provides tunable film bulk acoustic resonators TFBARs containing semiconducting piezoelectric layers and methods for tuning and adjusting the resonant properties. When a DC biasing voltage is varied, both the depletion region thickness and neutral region thickness associated in the semiconducting piezoelectric layers varies leading to changes in equivalent capacitances, inductance and resistances and hence the resonance properties and frequencies.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: June 4, 2019
    Inventors: Cindy X. Qiu, Ishiang Shih, Chunong Qiu, Andy Shih, Julia Qiu, Yi-Chi Shih
  • Patent number: 9929718
    Abstract: In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies one for transmit and the other for receive. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The present invention provides frequency tunable film bulk acoustic resonators (FBAR) with different structures. Thin film biasing resistors are integrated into the FBAR structure for DC biasing and RF isolation. A plurality of the present tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying DC biasing voltages to the resonators.
    Type: Grant
    Filed: September 6, 2016
    Date of Patent: March 27, 2018
    Inventors: Cindy X. Qiu, Ishiang Shih, Chunong Qiu, Andy Shih, Julia Qiu, Yi-Chi Shih
  • Publication number: 20180069528
    Abstract: In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies one for transmit and the other for receive. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The present invention provides frequency tunable film bulk acoustic resonators (FBAR) with different structures. Thin film biasing resistors are integrated into the FBAR structure for DC biasing and RF isolation. A plurality of the present tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying DC biasing voltages to the resonators.
    Type: Application
    Filed: September 6, 2016
    Publication date: March 8, 2018
    Inventors: Cindy X. Qiu, Ishiang Shih, Chunong Qiu, Andy Shih, Julia Qiu, Yi-Chi Shih
  • Patent number: 9906206
    Abstract: Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. This invention provides tunable surface acoustic wave resonators and filters utilizing semiconducting piezoelectric layers having embedded or elevated electrode doped regions. Both metallization ratio and loading mass are changed by varying a DC biasing voltage to effect a change in the resonant frequency of the tunable SAW devices.
    Type: Grant
    Filed: June 20, 2016
    Date of Patent: February 27, 2018
    Inventors: Ishiang Shih, Cindy X. Qiu, Chunong Qiu, Andy Shih, Julia Qiu, Yi-Chi Shih
  • Publication number: 20170366165
    Abstract: Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. This invention provides tunable surface acoustic wave resonators and filters utilizing semiconducting piezoelectric layers having embedded or elevated electrode doped regions. Both metallization ratio and loading mass are changed by varying a DC biasing voltage to effect a change in the resonant frequency of the tunable SAW devices.
    Type: Application
    Filed: June 20, 2016
    Publication date: December 21, 2017
    Inventors: Ishiang Shih, Cindy X. Qiu, Chunong Qiu, Andy Shih, Julia Qiu, Yi-Chi Shih
  • Patent number: 9799686
    Abstract: MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.
    Type: Grant
    Filed: September 9, 2013
    Date of Patent: October 24, 2017
    Inventors: Ishiang Shih, Cindy X. Qiu, Chunong Qiu, Yi-Chi Shih
  • Publication number: 20170085246
    Abstract: Filters and oscillators are important components for electronic systems especially those for communications. For many portable units operating at 2 GHz or less, surface acoustic wave resonators are used as filters or oscillators, the resonant frequency is determined by the electrode pitch and velocity of the surface acoustic waves. Because of the large number of frequency bands for communications, it is important to have SAW resonators where the resonant frequencies are tunable and adjustable. This invention provides tunable surface acoustic wave resonators utilizing semiconducting piezoelectric layers having embedded or elevated electrode doped regions. Both metallization ratio and loading mass are changed by varying a DC biasing voltage to effect a change in the resonant frequency. A plurality of the present tunable SAW devices may be connected into a tunable and selectable microwave filter for selecting and adjusting of the bandpass frequency or an tunable oscillator by varying the DC biasing voltages.
    Type: Application
    Filed: September 17, 2015
    Publication date: March 23, 2017
    Inventors: Ishiang Shih, Cindy X. Qiu, Chunong Qiu, Andy Shih, Julia Qiu, Yi-Chi Shih
  • Publication number: 20170025596
    Abstract: In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies, one for transmitting and the other for receiving. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The invention provides tunable film bulk acoustic resonators TFBARs containing semiconducting piezoelectric layers and methods for tuning and adjusting the resonant properties. When a DC biasing voltage is varied, both the depletion region thickness and neutral region thickness associated in the semiconducting piezoelectric layers varies leading to changes in equivalent capacitances, inductance and resistances and hence the resonance properties and frequencies.
    Type: Application
    Filed: July 22, 2015
    Publication date: January 26, 2017
    Inventors: Cindy X. Qiu, Ishiang Shih, Chunong Qiu, Andy Shih, Julia Qiu, Yi-Chi Shih
  • Publication number: 20160308067
    Abstract: A thin film transistor with a first metal oxynitride channel layer or a first metal oxide channel layer is provided to have controlled channel doping concentrations in a bottom surface region, a central channel region and a top surface region so that doping concentration ratios between the bottom surface region and the central channel region and between the top surface region and the central channel region are greater than a first threshold doping ratio and less than a second threshold doping ratio in order to retain more uniform charge carrier mobility values in the first channel layer and to improve the performance of the thin film transistor devices.
    Type: Application
    Filed: April 17, 2015
    Publication date: October 20, 2016
    Inventors: Ishiang Shih, Cindy X. Qiu, Andy Shih, Yi-Chi Shih, Chunong Qiu, Julia Qiu
  • Patent number: 9443740
    Abstract: A process for forming a T-gate with enhanced mechanical strength and a reduced gate length for high electron mobility transistors is provided. The process includes the steps of forming a stem portion cavity with rounded top edges to enhance the mechanical strength, creating an insoluble diffused feature shrinking layer to reduce the gate length, carrying out a thermal flow process to further reduce the gate length, and forming a head portion cavity with negative side wall slopes to facilitate lift-off of gate metal layers.
    Type: Grant
    Filed: May 15, 2015
    Date of Patent: September 13, 2016
    Inventors: Cindy X. Qiu, Kuang-Yu Yang, Ishiang Shih, Lu Han, Chunong Qiu, Julia Qiu, Andy Shih, Yi-Chi Shih
  • Patent number: 9440876
    Abstract: An electron definable glass or an electron sensitive glass for microstructures is provided with microstructures and optical waveguides formed therein. The microstructures are formed by electron beam irradiation in selected areas in the electron definable glass followed by a high temperature heat treatment and chemical etching, whereas the optical waveguides are formed by irradiating the electron definable glass by an electron beam followed by a low temperature heat treatment.
    Type: Grant
    Filed: May 29, 2014
    Date of Patent: September 13, 2016
    Inventors: Lu Han, Andy Shih, Yi-Chi Shih, Ishiang Shih, Cindy X. Qiu
  • Patent number: 9437626
    Abstract: MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.
    Type: Grant
    Filed: August 3, 2015
    Date of Patent: September 6, 2016
    Inventors: Ishiang Shih, Cindy X. Qiu, Chunong Qiu, Yi-Chi Shih
  • Publication number: 20160225915
    Abstract: Transistors with a first metal oxynitride channel layer and a second metal oxynitride barrier layer are provided. The first metal oxynitride channel layer is lightly doped or without intentional doping to achieve high carrier mobility. Impurity atoms are introduced into the second metal oxynitride barrier layer and the donated carriers migrate or drift into the first metal oxynitride channel layer to effect high mobility conduction between source and drain.
    Type: Application
    Filed: January 30, 2015
    Publication date: August 4, 2016
    Inventors: Cindy X. Qiu, Andy Shih, Yi-Chi Shih, Ishiang Shih, Chunong Qiu, Julia Qiu
  • Publication number: 20160126355
    Abstract: In one embodiment of the invention, a high electron mobility thin film transistor with a plurality of gate insulating layers and a metal oxynitride active channel layer is provided for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and minimize unwanted power dissipation in the backplane circuit. Another embodiment of the invention provides a high electron mobility thin film transistor structure with a plurality of metal oxynitride active channel layers and a gate insulating layer for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and to minimize unwanted power dissipation in the backplane circuit.
    Type: Application
    Filed: November 3, 2014
    Publication date: May 5, 2016
    Inventors: Ishiang Shih, Andy Shih, Cindy Qiu, Julia Qiu, Yi-Chi Shih, Chunong Qiu
  • Patent number: 9325279
    Abstract: One object of this invention is to provide a structure of integrated power transistor device having low thermal budget metal oxynitrides as the active channel on a CMOS logic and control circuit chip to form an integrated intelligent power switching module for power switching. The other object of this invention is to provide a structure of integrated power amplifier transistor device having low thermal budget metal oxynitride active channel layer on a CMOS logic and control circuit chip to form an integrated intelligent microwave power amplifier for RF power amplification.
    Type: Grant
    Filed: October 6, 2014
    Date of Patent: April 26, 2016
    Inventors: Cindy X. Qiu, Andy Shih, Yi-Chi Shih, Lu Han, Chunong Qiu, Ishiang Shih
  • Patent number: 9324884
    Abstract: Metal oxynitride diodes having at least a first metal oxynitride layer of a first conduction type and a second metal oxynitride layer of a second conduction type are provided. The first oxynitride layer is selectively doped or un-intentionally doped and have high carrier mobility. The second oxynitride layer is also selectively doped or un-intentionally doped and have high carrier mobility. A compensated oxynitride drift layer having a low carrier density may be adopted to increase the breakdown voltage of the device.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: April 26, 2016
    Inventors: Cindy X. Qiu, Andy Shih, Yi-Chi Shih, Ishiang Shih, Chunong Qiu, Julia Qiu
  • Patent number: 9324739
    Abstract: In one embodiment of the invention, a high electron mobility thin film transistor with a plurality of gate insulating layers and a metal oxynitride active channel layer is provided for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and minimize unwanted power dissipation in the backplane circuit. Another embodiment of the invention provides a high electron mobility thin film transistor structure with a plurality of metal oxynitride active channel layers and a gate insulating layer for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and to minimize unwanted power dissipation in the backplane circuit.
    Type: Grant
    Filed: November 3, 2014
    Date of Patent: April 26, 2016
    Inventors: Ishiang Shih, Andy Shih, Cindy Qiu, Julia Qiu, Yi-Chi Shih, Chunong Qiu
  • Publication number: 20160099684
    Abstract: One object of this invention is to provide a structure of integrated power transistor device having low thermal budget metal oxynitrides as the active channel on a CMOS logic and control circuit chip to form an integrated intelligent power switching module for power switching. The other object of this invention is to provide a structure of integrated power amplifier transistor device having low thermal budget metal oxynitride active channel layer on a CMOS logic and control circuit chip to form an integrated intelligent microwave power amplifier for RF power amplification.
    Type: Application
    Filed: October 6, 2014
    Publication date: April 7, 2016
    Inventors: Cindy X. Qiu, Andy Shih, Yi-Chi Shih, Lu Han, Chunong Qiu, Ishiang Shih
  • Patent number: 9276131
    Abstract: This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and stresses can be induced in the devices during the fabrication and operation. The present invention provides metal electrode with stress release structures to reduce the strain and stresses in these devices.
    Type: Grant
    Filed: May 10, 2013
    Date of Patent: March 1, 2016
    Inventors: Ishiang Shih, Cindy Xing Qiu, Chunong Qiu, Yi-Chi Shih
  • Publication number: 20160005771
    Abstract: MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.
    Type: Application
    Filed: August 3, 2015
    Publication date: January 7, 2016
    Inventors: Ishiang Shih, Cindy Xing Qiu, Chunong Qiu, Yi-Chi Shih