Patents by Inventor Ishibashi Shigeru

Ishibashi Shigeru has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming contact
    Patent number: 6821846
    Abstract: A method of manufacturing a contact is disclosed. A substrate is provided, and a first dielectric layer and a metal layer are formed thereon in sequence. A second dielectric layer is formed on the metal layer and the first dielectric layer. A bottom contact is formed in the second dielectric layer to electrically connect to the metal layer. A node contact is formed in the first and second dielectric layers. A capacitor is formed on the dielectric layer to electrically connect to the node contact, and a middle contact is formed on the second dielectric layer to electrically connect to the bottom contact. A third dielectric layer is formed on the capacitor, the middle contact and the second dielectric layer. A top contact is formed in the third dielectric layer to electrically connect to the middle contact.
    Type: Grant
    Filed: January 27, 2003
    Date of Patent: November 23, 2004
    Assignee: Winbond Electronics Corp.
    Inventors: Yao-Ting Shao, Ishibashi Shigeru
  • METHOD OF FORMING CONTACT
    Publication number: 20030235978
    Abstract: A method of manufacturing a contact is disclosed. A substrate is provided, and a first dielectric layer and a metal layer are formed thereon in sequence. A second dielectric layer is formed on the metal layer and the first dielectric layer. A bottom contact is formed in the second dielectric layer to electrically connect to the metal layer. A node contact is formed in the first and second dielectric layers. A capacitor is formed on the dielectric layer to electrically connect to the node contact, and a middle contact is formed on the second dielectric layer to electrically connect to the bottom contact. A third dielectric layer is formed on the capacitor, the middle contact and the second dielectric layer. A top contact is formed in the third dielectric layer to electrically connect to the middle contact.
    Type: Application
    Filed: January 27, 2003
    Publication date: December 25, 2003
    Inventors: YAO-TING SHAO, ISHIBASHI SHIGERU