Patents by Inventor Ishverlal K. Naik

Ishverlal K. Naik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4521443
    Abstract: A method for fabricating optical waveguides and other optical devices. Nitrogen ions are implanted by ion bombardment in a substrate composed of silicon dioxide. Damage to the atomic structure caused by the bombardment is removed by annealing to obtain a low-loss device. The chemical interaction of the nitrogen ions with the silicon dioxide creates an implanted region having an increased index of refraction, which implanted region retains the increased refractive index after annealing.
    Type: Grant
    Filed: May 7, 1984
    Date of Patent: June 4, 1985
    Assignee: Northrop Corporation
    Inventors: Ishverlal K. Naik, Ronald G. Eguchi