Abstract: An apparatus for accumulating sheet material in a sheet handling system including a first conveyance, a second conveyance, an auxiliary conveyance and a processor to control the conveyances based upon a selected operating mode. The first conveyance receives singulated sheets and conveys the sheets to an accumulator station to produce completed collations. The second conveyance is operative to dispense completed collations from the accumulator station and, receives the completed collations from the first conveyance, in one operating mode, and from the auxiliary conveyance in another operating mode when the first conveyance is inoperative. The processor is responsive to a next collation signal, to control the conveyances based upon a selected one of the operating modes.

Abstract: An apparatus for accumulating sheet material in a sheet handling system including a first conveyance, a second conveyance, an auxiliary conveyance and a processor to control the conveyances based upon a selected operating mode. The first conveyance receives singulated sheets and conveys the sheets to an accumulator station to produce completed collations. The second conveyance is operative to dispense completed collations from the accumulator station and, receives the completed collations from the first conveyance, in one operating mode, and from the auxiliary conveyance in another operating mode when the first conveyance is inoperative. The processor is responsive to a next collation signal, to control the conveyances based upon a selected one of the operating modes.

Abstract: A method for operating a sheet handling system including the steps of: determining a location of a next collation mark on select sheets of the stack of material, selecting an operating mode based upon the proximity of the next collation mark relative to a leading or trailing edge of each of the select sheets, processing the singulated sheets in a first operating mode when the next collation mark is proximal to the leading edge of each of the select sheets, and in a second operating mode, when the next collation mark is proximal to a trailing edge of each of the select sheets. Each of the select sheets is buffered to change the spatial relationship between each of the select sheet and each completed collation of sheets along the feed path. By selectively processing the sheets based upon the location of the next collation mark, the conveyance feed path is minimized.

Abstract: A system that generates an intense hot gas stream is described to etch a polymer on a substrate used in the manufacture of semiconductor and MEMS devices with no surface damage. The etching process is particularly useful to remove a polymer from relatively high aspect Height-to-Width and Width-to-Height ratio holes that can include trenches, having relatively large aspect ratios for removal of polymers used in connection with the manufacturing of microstructures.

Abstract: A system that generates an intense hot gas stream is described to etch a polymer on a substrate used in the manufacture of semiconductor and MEMS devices with no surface damage. The etching process is particularly useful to remove a polymer from relatively high aspect Height-to-Width and Width-to-Height ratio holes that can include trenches, having relatively large aspect ratios for removal of polymers used in connection with the manufacturing of microstructures.

Abstract: A hot arc-type plasma generating system is described to etch a polymer on a substrate used in the manufacture of semiconductor devices. The etching process is particularly useful to remove a polymer from high aspect ratio holes, that can include trenches, greater than about 10 to 1 and even greater than 50 to 1.

Abstract: A technique is described for a very rapid thermal treatment of a substrate used to make semiconductor devices. The substrate is subjected to a very hot gas stream such as can be produced from an arc-type plasma generator. The substrate is then moved through the hot gas stream at a velocity selected to sufficiently heat the surface of the substrate to a high temperature at which doping and diffusion processes can be done in an efficient manner, while a thermal gradient is preserved throughout the thickness of the substrate. In this manner as the substrate moves through the hot gas stream a rapid heating of the surface is achieved and as the heated portion moves out of the gas stream, the bulk of the substrate can assist in the cooling of the heated portion. Sharply defined doping regions can be formed in the substrate. The method yields temperature heating and cooling rates of the order of 105° C.

Abstract: A hot arc-type plasma generating system is described to etch a polymer on a substrate used in the manufacture of semiconductor devices. The etching process is particularly useful to remove a polymer from high aspect ratio holes, that can include trenches, greater than about 10 to 1 and even greater than 50 to 1.

Abstract: Multiple plasma jet path sensing positions and multiple localized steering magnetic fields for each plasma jet leg in an atmospheric plasma jet control system are described for a precise control over positions of plasma jet legs as well as their directions in a vertex zone, where a hot gas stream is generated for treatment of a semiconductor device. With a plasma jet generator system in accordance with the invention precise control over the plasma jet legs enables one to virtually eliminate plasma jet path instability at the vertex region.

Abstract: In the method and apparatus of this invention a wafer for manufacturing semiconductor devices is held by a vortex-type substrate holder against a moveable frame during processing. Motion of the wafer is controlled with movement of the frame. The frame is shaped to provide a sealed chamber through which gas that is used to create the vortices is also re-captured. With such sealed chamber a higher heat conducting but more expensive gas can be recycled and used for the vortex holder and cooling of the wafer. In another technique of this invention, damage of the wafer edges from impacts with position limiters is avoided by inserting a small physical off-set of the center of mass of the wafer relative to that of the frame used to rotate the wafer. This prevents sliding of the wafer within the holder. In another feature of the invention end effects during treatment of the wafer are avoided by providing an extension around the wafer.

Abstract: Multiple plasma jet path sensing positions and multiple localized steering magnetic fields for each plasma jet leg in an atmospheric plasma jet control system are described for a precise control over positions of plasma jet legs as well as their directions in a vertex zone, where a hot gas stream is generated for treatment of a semiconductor device. With a plasma jet generator system in accordance with the invention precise control over the plasma jet legs enables one to virtually eliminate plasma jet path instability at the vertex region.

Abstract: A method for treating an article with a plasma jet is disclosed. The method involves rotating an article (30) with a surface (32) to be treated about an axis (Ha), wherein the rotation defines a rotation radius extending from the axis. The article surface is contacted with the plasma jet (10) to form a plasma jet footprint (11) having a predetermined dimension on the article surface. The plasma jet footprint is moved along the rotation radius in the radial direction according to a velocity profile along the rotation radius so as to apply heat to the article surface to obtain a desired temperature distribution profile on the article surface along the rotation radius. The method provides a means for controlling the temperature of the article uniformly in a temperature range from about 30° C. and 1200° C. to allow different treatment applications to be performed on the article.

Abstract: An apparatus for processing substrates with a plasma jet with increased throughput is described. The apparatus comprises at least two carrousels for holding a plurality of substrates. Each of the carrousels includes a rotatable angle drive having a rotation axis Da, a plurality of arms extending radially from the angle drive and a plurality of rotatable substrate holders. Each of the substrate holders is connected to one of the arms, each of the rotatable substrate holders has a rotation axis Ha positioned at a distance R from the rotation axis Da of the rotatable angle drive. The carousel angle drive provides programmable motion of the substrates being treated relative to a plasma jet generator. The plasma jet generator is movable from a first position Z.sub.1 adjacent to the first carousel to a second position Z.sub.2 adjacent to the second carousel. While the substrates on the first carousel are being treated by the plasma jet, the substrates on the second carousel can be loaded or unloaded.