Abstract: According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.

Abstract: The present invention relates to techniques, including methods and devices, for optical technology. In particular, the present invention provides methods, devices, and structures for optical devices, and in particular, photo diodes, commonly called photo sensors.

Abstract: N-polar transistor structures have relied on the use of dry etch processes that use plasmas generated from gaseous species to remove III-N layers as commercially viable wet etchants do not exist. The present disclosure reports on methods for the fabrication of N-polar III-N transistors using wet etches along with transistor structures that are enabled by the availability of wet-etches.