Abstract: The invention relates to a process for fabricating a monocrystalline Si-micromechanical element integrated with a CMOS circuit element within the CMOS technology, wherein a domain of second conducting property is formed within a substrate of first conducting property, here the second conducting property is reverse with respect to the first conducting property, then simultaneously with or immediately after this a domain of monocrystalline Si is formed within the substrate for fabricating a micromechanical element. After this, a CMOS circuit element is fabricated within the substrate through the known steps of CMOS technology and then the circuit element, as well as a portion of said domain for fabricating the micromechanical element that will carry the micromechanical element after its fabrication are covered with a protecting layer.

Abstract: In general, the invention relates to receptors capable of the efficient recognition and binding of target molecules, said receptors being composed of flagellin proteins which comprise the flagellar filaments of bacteria. More closely, the invention relates to modified flagellins or flagellin fragments useful as receptors, and filamentous receptor-structures comprising them. Moreover, the invention relates to procedures for their preparation and their uses. Flagellin-based receptors can be produced easily and inexpensively by bacteria, and purified with an ease without lysing the cells. Moreover, flagellins, due to their polymerization ability, can be used to build various filamentous structures. Starting from flagellin receptors of the invention filaments of desired length and construction can be prepared with a very high binding site density on their surface. These supramolecular objects may serve as basic recognition units for biological sensors and diagnostic kits.

Abstract: The present invention relates generally to a photodetector, and more particularly to a photodetector formed by a static induction transistor. The present invention includes the following constituent elements:In the photodetector formed by a static induction transistor, an n.sup.+ -type buried layer is provided, as a drain or source region of the photodetector, for limiting the thickness of a high resistivity i-type layer between a p.sup.+ -type region forming a gate and a substrate. Letting the wavelength of light incident to the surface of the photodetector and an absorption coefficient for the incident light be represented by .lambda..sub.i and .alpha..sub.i (.lambda..sub.i), respectively, the distance between the in junction of the abrupt pin junction and the surface of the photodetector x.sub.i is ##EQU1## the ratio between the area A(.lambda..sub.i) of each gate portion for selectively detecting light of the specified wavelength .lambda..sub.i and the total area A.sub.

Abstract: This invention relates to a method of manufacturing recessed gate type SIT, comprising the steps of recess etching of a high resistivity epitaxial layer on a semiconductor substrate serving as a drain or source, adding an impurity on the bottom to form a gate, and providing a surface main electrode on the surface of the high resistance epitaxial layer. When a gate region is cut by etching, a recessed part is produced to form a concave portion wider than an etching mask. This etching mask is used without modification as a mask at the time of doping by ion implantation. This not only enables to omit some steps but forms a surface main electrode portion and a gate region in a self-aligning fashion to obtain a static induction transistor which has a well controlled characteristic.