Abstract: A circuit having an amplifier, comprising: a depletion mode transistor having a source electrode coupled to a reference potential; a drain electrode coupled to a potential more positive than the reference potential; and a gate electrode for coupling to an input signal. The circuit includes a bias circuit, comprising: a current source; and biasing circuitry coupled to the current source and between the potential more positive than the reference potential and a potential more negative than the reference potential. A control circuit is connected to the current source for controlling the amount of current produced by the current source to the biasing circuitry.

Abstract: A Field Effect Transistor (FET) having a substrate; a plurality of active regions disposed on the substrate; and a laterally extending finger-like control electrode disposed on a portion of a surface of the substrate. The active regions are laterally spaced one from the other successively along the laterally extending finger-like control electrode. The laterally extending finger-like control electrode controls a flow of carriers through each one of the plurality of active regions between a source electrode and a drain electrode.

Abstract: A circuit having an amplifier, comprising: a depletion mode transistor having a source electrode coupled to a reference potential; a drain electrode coupled to a potential more positive than the reference potential; and a gate electrode for coupling to an input signal. The circuit includes a bias circuit, comprising: a current source; and biasing circuitry coupled to the current source and between the potential more positive than the reference potential and a potential more negative than the reference potential. A control circuit is connected to the current source for controlling the amount of current produced by the current source to the biasing circuitry.

Abstract: A Field Effect Transistor (FET) having a substrate; a plurality of active regions disposed on the substrate; and a laterally extending finger-like control electrode disposed on a portion of a surface of the substrate. The active regions are laterally spaced one from the other successively along the laterally extending finger-like control electrode. The laterally extending finger-like control electrode controls a flow of comers through each one of the plurality of active regions between a source electrode and a drain electrode.

Abstract: A circuit having an amplifier, comprising: a depletion mode transistor having a source electrode coupled to a reference potential; a drain electrode coupled to a potential more positive than the reference potential; and a gate electrode for coupling to an input signal. The circuit includes a bias circuit, comprising: a current source; and biasing circuitry coupled to the current source and between the potential more positive than the reference potential and a potential more negative than the reference potential. A control circuit is connected to the current source for controlling the amount of current produced by the current source to the biasing circuitry.

Abstract: A microwave amplifier having a field effect transistor formed on an upper surface of a substrate. A de-Q'ing section connected to the field effect transistor includes: a de-Q'ing resistive via that passes through the substrate; and a de-Q'ing capacitor having one plate thereof connected a ground plane conductor through the de-Q'ing resistive via.

Abstract: A high power RF connector receptacle having a solderable pin, an outer connector receptacle shell and a high breakdown voltage dielectric such as Silicon Carbide. The connector receptacle can be completed as a stepped process where the Silicon Carbide substrate can be mounted to the package, the pin can be dropped into place and soldered, and then the outer shell can be soldered onto the SiC substrate. Alternatively, the SiC, pin and outer shell can be assembled as a subassembly and then soldered to the package. The combination of SiC and solder gives a hermetic seal to the package. In addition, the SiC has an extraordinarily high dielectric breakdown voltage for high power connections.

Abstract: A Field Effect Transistor (FET) having a plurality of FET cells having a plurality of source pads, a plurality of drain pads, and a plurality of gate electrodes disposed on a surface of a substrate; each one of the FET cells having a corresponding one of the gate electrodes disposed between one of the source pads and one of the drain pads. The FET includes; a gate contact connected to the gate electrode of each one of the FET cells; a drain contact connected to the drain pad of each one of the FET cells; and a source contact connected to source pad of each one of the FET cells. The cells are disposed in a loop configuration.

Abstract: A Field Effect Transistor (FET) having: a plurality of FET cells having a plurality of source pads, a plurality of drain pads, and a plurality of gate electrodes disposed on a surface of a substrate; each one of the FET cells having a corresponding one of the gate electrodes disposed between one of the source pads and one of the drain pads; a gate contact connected to the gate electrodes of each one of the FET cells; a drain contact connected to the drain pad of each one of the FET cells; and a source contact connected to source pad of each one of the FET cells. The cells are disposed on a surface in a two-dimensional array.

Abstract: A high power RF connector receptacle having a solder able pin, an outer connector receptacle shell and a high breakdown voltage dielectric such as Silicon Carbide. The connector receptacle can be completed as a stepped process where the Silicon Carbide substrate can be mounted to the package, the pin can be dropped into place and soldered, and then the outer shell can be soldered onto the SiC substrate. Alternatively, the SiC, pin and outer shell can be assembled as a subassembly and then soldered to the package. The combination of SiC and solder gives a hermetic seal to the package.

Abstract: A Microwave Monolithic Integrated Circuit (MMIC) having an integrated high power load. The MMIC includes a microwave transmission line and a resistive load coupled to a terminating end of the microwave transmission line. The resistive load comprises a hollow resistive material disposed on sidewalls of a via passing through a substrate, the resistive material having an upper portion electrically connected to a terminating end of a strip conductor of the microwave transmission line strip conductor and a lower portion electrically connected to the ground plane.

Abstract: A Field Effect Transistor (FET) having a plurality of FET cells having a plurality of source pads, a plurality of drain pads, and a plurality of gate electrodes disposed on a surface of a substrate; each one of the FET cells having a corresponding one of the gate electrodes disposed between one of the source pads and one of the drain pads. The FET includes; a gate contact connected to the gate electrode of each one of the FET cells; a drain contact connected to the drain pad of each one of the FET cells; and a source contact connected to source pad of each one of the FET cells. The cells are disposed in a loop configuration.

Abstract: A Field Effect Transistor (FET) having: a plurality of FET cells having a plurality of source pads, a plurality of drain pads, and a plurality of gate electrodes disposed on a surface of a substrate; each one of the FET cells having a corresponding one of the gate electrodes disposed between one of the source pads and one of the drain pads; a gate contact connected to the gate electrodes of each one of the FET cells; a drain contact connected to the drain pad of each one of the FET cells; and a source contact connected to source pad of each one of the FET cells. The cells are disposed on a surface in a two-dimensional array.

Abstract: A circuit having an amplifier, comprising: a depletion mode transistor having a source electrode coupled to a reference potential; a drain electrode coupled to a potential more positive than the reference potential; and a gate electrode for coupling to an input signal. The circuit includes a bias circuit, comprising: a current source; and biasing circuitry coupled to the current source and between the potential more positive than the reference potential and a potential more negative than the reference potential. A control circuit is connected to the current source for controlling the amount of current produced by the current source to the biasing circuitry.

Abstract: A radio frequency modulator system having a radio frequency amplifier controlled by a pulse modulator. The pulse modulator includes: a first switching circuit response to an input pulse for coupling a dc voltage relative to a reference potential to the output electrode when the radio frequency signal is to be amplified by the radio frequency amplifier and for decoupling the dc voltage from the output electrode when the radio frequency signal is to be decoupled from the output electrode wherein charge is stored in the storage element when the dc voltage is coupled to the output electrode; and: a second switching circuit responsive to the input pulse for discharging the stored charge when the dc voltage is decoupled from the output electrode.

Abstract: A radio frequency modulator system having a radio frequency amplifier controlled by a pulse modulator. The pulse modulator includes: a first switching circuit response to an input pulse for coupling a dc voltage relative to a reference potential to the output electrode when the radio frequency signal is to be amplified by the radio frequency amplifier and for decoupling the dc voltage from the output electrode when the radio frequency signal is to be decoupled from the output electrode wherein charge is stored in the storage element when the dc voltage is coupled to the output electrode; and: a second switching circuit responsive to the input pulse for discharging the stored charge when the dc voltage is decoupled from the output electrode.