Abstract: A manufacturing method of a semiconductor device includes the steps of: preparing a lead frame; mounting a plurality of semiconductor chips on the lead frame; and sealing one portion of the lead frame with a sealing resin. The resin-sealing step includes the step of: disposing the lead frame, molds having main surfaces on which cavity parts are formed, the lead frame being disposed on the main surface of the heated molds; injecting a resin in the main surfaces of the heated molds so as to seal the one portion of the lead frame with the sealing resin; and taking out the lead frame from the heated molds. In the taking-out step, while the lead frame is taken out, the main surfaces of the molds are inspected by using a sensor, and the sensor is cooled and formed integrally with an arm used for taking out the lead frame.

Abstract: A manufacturing method of a semiconductor device includes the steps of: preparing a lead frame; mounting a plurality of semiconductor chips on the lead frame; and sealing one portion of the lead frame with a sealing resin. The resin-sealing step includes the step of: disposing the lead frame, molds having main surfaces on which cavity parts are formed, the lead frame being disposed on the main surface of the heated molds; injecting a resin in the main surfaces of the heated molds so as to seal the one portion of the lead frame with the sealing resin; and taking out the lead frame from the heated molds. In the taking-out step, while the lead frame is taken out, the main surfaces of the molds are inspected by using a sensor, and the sensor is cooled and formed integrally with an arm used for taking out the lead frame.

Abstract: In lead forming of a packaged semiconductor device having sides and leads extending outwardly from the sides of a package, separation between first and second bottom dies is adjusted to receive the package. The first and second bottom dies have top surfaces that include oblique portions. The package is placed between the first and second bottom dies with the leads proximate the top surfaces of the first and second bottom dies. At least one of (i) the first and second bottom dies and (ii) first and second top dies having respective bottom surfaces with oblique portions complementary to the top surfaces of the first and second bottom dies are moved toward each other. The leads are clamped between the top and bottom dies and are formed. Simultaneously, lateral forces, produced through contact of the complementary top and bottom surfaces and the leads, move the first and second top dies laterally, changing separation between the first and second top dies.

Abstract: In a lead forming apparatus for a semiconductor device, a holder holds a semiconductor device with leads to be formed, the semiconductor device having leads extending from a package. Two die assemblies (for bending, for cutting, or the like) are set in parallel, each including top and bottom dies matched with each other. A mover changes relative distance between the two die assemblies. The top and bottom dies in the two die assemblies are positioned so the leads of the semiconductor device held on the holder are between the dies.

Abstract: In a lead forming apparatus for a semiconductor device, a holder holds a semiconductor device with leads to be formed, the semiconductor device having leads extending from a package. Two die assemblies (for bending, for cutting, or the like) are set in parallel, each including top and bottom dies matched with each other. A mover changes relative distance between the two die assemblies. The top and bottom dies in the two die assemblies are positioned so the leads of the semiconductor device held on the holder are between the dies.

Abstract: A clamping apparatus includes upper and lower platens; one or more tiebars connecting the platens; and an intermediate platen between the upper and lower platens for movement relative to and along the tiebars. Upper and lower mold halves are provided on the upper and intermediate platens, respectively. A linkage connects the lower and intermediate platens. The linkage includes upper and lower links connected with each other for rotation on an intermediate shaft. The upper and lower links are pivotably supported on first and second shafts fixed to the intermediate and lower platens, repectively. The intermediate shaft is operatively connected with a drive mechanism so that the drive mechanism transmits a driving force to the linkage, and the lower platen is moved relative to the intermediate platen. A set of a radical needle bearing and a thrust bearing is used for at least one of the intermediate, first, and second shafts.

Abstract: A resin molding apparatus including a holder for controllably holding and releasing a lead frame having a first and second principal surfaces and a plurality of elements mounted on at least one of the first and second principal surfaces. The resin molding apparatus also includes a transporter for transporting the holder with the lead frame from a first position via a second position to a third position. Further it has a first and second molding dice controllably adjoining the first and second principal surfaces of the lead frame arranged on the second position, respectively, so that a molding cavity is defined therebetween, which covers the element of the lead frame. A resin injector is provided for injecting resin into the molding cavity; and also an elevator is arranged on the second position for elevating the holder with the lead frame in a direction perpendicular to the first and second principal surfaces.

Abstract: In a resin molding method for a semiconductor device, the respective cavities of upper and lower mold blocks are faced each other when mold-clamped, and a lead frame, a semiconductor chip connected to the lead frame and a nut, overlapping and provided on a terminal portion of the lead frame, are integrally molded with a seal resin that is injected into the cavities in the mold-clamping condition, and upper and lower sides of the nut are formed to be resin-tight structures by pressure from elastic bodies.

Abstract: A clamping apparatus includes upper and lower platens; one or more tiebars for connecting the platens; an intermediate platen provided between the upper and lower platens for movement relative to and along the tiebars. Upper and lower mold halves are provided on the upper and intermediate platens, respectively. A linkage is provided for connecting the lower and intermediate platens. The linkage includes upper and lower links connected with each other for rotation on an intermediate shaft. The upper and lower links are pivotably supported on first and second shafts fixed on the intermediate and lower platens, respectively. The intermediate shaft is operatively connected with the drive mechanism so that the mechanism transmits a driving force to the linkage, so that the lower platen is moved relative to the intermediate platen. A set of radial needle bearing and thrust bearing is used for at least one of the intermediate, first and second shafts.

Abstract: A semiconductor manufacturing apparatus is provided with a cavity-depth adjusting mechanism for moving a movable member relative to a stationary member to adjust the depth of cavities according to the thickness of a package to be molded. The semiconductor manufacturing apparatus is further provided with a material-thickness adjusting mechanism for moving another movable member relative to another stationary member to adjust the level of a lead frame mounting surface according to the thickness of a lead frame to be mounted.

Abstract: A semiconductor device substrate which can be easily conveyed and a semiconductor device fabrication method using the substrate. The semiconductor device fabrication method includes forming a solder resist on a semiconductor element mounting plate-shaped substrate having major and minor sides and containing organic matter, having a linear expansion coefficient A different from that of the substrate, warping the substrate along a minor-side direction, and conveying the warped substrate.

Abstract: To provide a semiconductor device substrate which can be easily conveyed and a semiconductor device fabrication method using the substrate. The semiconductor device fabrication method includes a step of forming a solder resist, on a semiconductor element mounting plate-shaped substrate having major and minor sides and containing an organic matter, having a linear expansion coefficient A different fiom that of the substrate, a step of warping the substrate on which the solder resist is formed in its minor-side direction, and a step of conveying the warped substrate.

Abstract: A plastic molding device for a semiconductor element for plastic molding a semiconductor element on a lead frame, which comprises: an upper platen, a lower platen, and a movable platen movably provided at a tie bar which is provided between said two platens; an upper metal mold and a lower metal mold provided at the upper platen and the movable platen, respectively; a motor for applying a raising force for driving the movable platen; a driving force conversion mechanism for converting the rotation force of the motor into a reciprocative force; and a double toggle mechanism for giving the reciprocative force to the movable platen.

Abstract: A plastic molding device for a semiconductor element for plastic molding a semiconductor element on a lead frame, which comprises: an upper platen, a lower platen, and a movable platen movably provided at a tie bar which is provided between said two platens; an upper metal mold and a lower metal mold provided at the upper platen and the movable platen, respectively; a motor for applying a raising force for driving the movable platen to; a driving force conversion mechanism for converting the rotation force of the motor into a reciprocative force; and a double toggle mechanism for giving the reciprocative force to the movable platen.

Abstract: A process of thermally cracking a heavy petroleum oil wherein the heavy petroleum oil is treated successively in a cracking furnace and then in a perfect mixing type tank reactor. The thermal cracking in the cracking furnace is performed at a temperature at the outlet of the cracking furnace of 450.degree.-520.degree. C. with a conversion of at least 60-75% of the overall conversion rate while the thermal cracking in the tank reactor is performed at a temperature of 400.degree.-450.degree. C. a pressure of from ambient pressure to 1 kg/cm.sup.2 for a period of time of less than 30 minutes but not less than 10 minutes while feeding steam having a temperature of 435.degree.-700.degree. C. to the tank reactor in an amount of 8-20% by weight of the heavy petroleum oil fed to the cracking furnace.

Abstract: A plastic molding device for a semiconductor element for plastic molding a semiconductor element on a lead frame, which comprises: an upper platen, a lower platen, and a movable platen movably provided at a tie bar which is provided between said two platens; an upper metal mold and a lower metal mold provided at the upper platen and the movable platen, respectively; a motor for applying a raising force for driving the movable platen; a driving force conversion mechanism for converting the rotation force of the motor into a reciprocal force; and a double toggle mechanism for giving the reciprocal force to the movable platen.

Abstract: Molten pitch is mixed and atomized in an inert gas stream having a temperature less than that of the molten pitch, cooled to the ordinary temperature and separated from the gas stream.Fine powder such as carbon, silica alumina and the like is added to at least one step of the process to improve the fluidity of the thusly obtained fine solid pitch spheres. The pitch spheres are easy to storage, handle and transport as they behave like a fluid.

Abstract: A heavy hydrocarbon feed stock is, after being heat-treated in a first cracking zone, introduced into a second thermal cracking zone for obtaining a thermally cracked product and a pitch product. The second cracking zone has a plurality of cracking reactors which are connected in series, through which is successively passed the treated feed stock and to each of which is supplied a gaseous heat transfer medium to maintain the liquid phase therein at a temperature sufficient for effecting the thermal cracking and to strip the resulting distillable, cracked components from the liquid phase. The thermal cracking temperature in one reactor is so controlled as to become higher than that in its adjacent upstream-side reactor. The distillable, cracked components in respective reactors are removed overhead therefrom and separated into a heavy fraction and a light fraction, while the liquid phase in the downstream-end reactor is discharged therefrom for recovery as the pitch product.