Patents by Inventor Iton Wang

Iton Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating metal-to-metal antifuse with improved diffusion barrier layer
    Patent number: 5753528
    Abstract: A metal-to-metal antifuse comprises a lower electrode comprising a first metal layer in an integrated circuit, a first barrier layer formed from a layer of TiW:N disposed over the lower electrode, a layer of antifuse material formed from amorphous silicon over the first barrier layer, a second barrier layer formed from a layer of TiW:N disposed over the layer of antifuse material, said second barrier layer, and an upper electrode over the second barrier layer, the upper electrode comprising a second metal layer in the integrated circuit.
    Type: Grant
    Filed: November 7, 1995
    Date of Patent: May 19, 1998
    Assignee: Actel Corporation
    Inventors: Abdul R. Forouhi, Iton Wang
  • Integrated circuit barrier structure
    Patent number: 5670823
    Abstract: A barrier metal integrated circuit structure, including relatively thin, highly nitrided layers of TiW (i.e., TiW:N) straddling a central conductor layer, and in turn each being straddled by adjacent layers of relatively thick substantially un-nitrided TiW material, and a method for its fabrication including deposition of layers of TiW and TiW:N, the latter in a N.sub.2 dominated atmosphere and/or under backbias conditions effective for establishing at least a saturated level of nitrogen into the TiW:N, resulting in an effective barrier to migration of conductor materials from the conductor layer.
    Type: Grant
    Filed: June 28, 1996
    Date of Patent: September 23, 1997
    Inventors: James B. Kruger, S. Jeffrey Rosner, Iton Wang
  • Metal-to-metal antifuse with improved diffusion barrier layer
    Patent number: 5510646
    Abstract: A metal-to-metal antifuse comprises a lower electrode comprising a first metal layer in an integrated circuit, a first barrier layer formed from a layer of TiW:N disposed over the lower electrode, a layer of antifuse material formed from amorphous silicon over the first barrier layer, a second barrier layer formed from a layer of TiW:N disposed over the layer of antifuse material, said second barrier layer, and an upper electrode over the second barrier layer, the upper electrode comprising a second metal layer in the integrated circuit.
    Type: Grant
    Filed: June 10, 1993
    Date of Patent: April 23, 1996
    Assignee: Actel Corporation
    Inventors: Abdul R. Forouhi, Iton Wang
  • Methods of making integrated circuit barrier structures
    Patent number: 5286676
    Abstract: A barrier metal integrated circuit structure, including relatively thin, highly nitrided layers of TiW (i.e., TiW:N) straddling a central conductor layer, and in turn each being straddled by adjacent layers of relatively thick substantially un-nitrided TiW material, and a method for its fabrication including deposition of layers of TiW and TiW:N, the latter in a N.sub.2 dominated atmosphere by backs puttering and/or under backbias conditions effective for establishing at least a saturated level of nitrogen into the TiW:N, resulting in an effective barrier to migration of conductor materials from the conductor layer.
    Type: Grant
    Filed: June 15, 1992
    Date of Patent: February 15, 1994
    Assignee: Hewlett-Packard Company
    Inventors: James B. Kruger, S. Jeffrey Rosner, Iton Wang