Abstract: A method and system for large scale Vertical-Cavity Surface-Emitting Laser (VCSEL) binning from wafers to be compatible with a Clock-Data Recovery Unit (CDRU) and/or a VCSEL driver are provided. An illustrative method of binning is provided that includes: for at least a portion of VCSELs on a wafer, measuring a set of representative parameters of the VCSELs, of predetermined DC or small-signal values, and sorting the measured VCSELs into clusters according to the measured set of representative parameters of the VCSELs; further sorting the clusters into sub-groups that comply with specifications of the VCSEL driver; and providing a feedback signal to the CDRU for equalizing control signals provided to the VCSEL driver.

Abstract: A memory device includes a memory cell and a controller. The memory cell includes: (a) an array of molecule chains, at least one molecule chain includes: (i) first and second binding sites positioned at first and second ends of the molecule chain, respectively, and (ii) a chain of one or more fullerene derivatives, chemically connecting between the first and second binding sites, (b) source and drain electrodes, electrically connected to the first and second binding sites, respectively, and configured to apply to the array a source-drain voltage (VSD) along a first axis, and (c) a gate electrode, configured to apply to the array a gate voltage (VG) along a second different axis. The controller is configured to perform a data storage operation in the memory cell by (i) applying to the gate electrode a signal for producing the VG, and (ii) applying the VSD between the source and drain electrodes.

Abstract: Disclosed are a testing unit, system, and method for testing and predicting failure of optical receivers. The testing unit and system are configured to apply different values of current, voltage, heat stress, and illumination load on the optical receivers during testing. The test methods are designed to check dark current, photo current, forward voltage, and drift over time of these parameters.

Abstract: A tunable vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a VCSEL emission structure, piezoelectric material, and a piezoelectric electrode. The VCSEL emission structure includes a first reflector; a second reflector; and an active cavity material structure disposed between the first and second reflectors. The active cavity material structure includes an active region. The piezoelectric material is mechanically coupled to the VCSEL emission structure such that when the piezoelectric material experiences a mechanical stress, the mechanical stress is transferred to the active cavity material structure of the VCSEL emission structure. The piezoelectric electrode is designed to cause an electric field within the piezoelectric material.

Abstract: Embodiments are disclosed for a quantum key distribution enabled intra-datacenter network. An example system includes a first vertical cavity surface emitting laser (VCSEL), a second VCSEL and a network interface controller. The first VCSEL is configured to emit a first optical signal associated with data. The second VCSEL is configured to emit a second optical signal associated with quantum key distribution (QKD). Furthermore, the network interface controller is configured to manage transmission of the first optical signal associated with the first VCSEL and the second optical signal associated with the second VCSEL via an optical communication channel coupled to a network interface module.

Abstract: A VCSEL includes an active region between a top distributed Bragg reflector (DBR) and a bottom DBR each having alternating GaAs and AlGaAs layers. The active region includes quantum wells (QW) confined between top and bottom GaAs-containing current-spreading layers (CSL), an aperture layer having an optical aperture and a tunnel junction layer above the QW. A GaAs intermediate layer configured to have an open top air gap is disposed over a boundary layer of the active region and the top DBR. The air gap is made wider than the optical aperture and has a height equal to one quarter of VCSEL's emission wavelength in air. The top DBR is attached to the intermediate layer by applying wafer bonding techniques. VCSEL output, the air gap, and the optical aperture are aligned on the same optical axis. The bottom DBR is epitaxially grown on a silicon or a GaAs substrate.

Abstract: Embodiments are disclosed for a quantum key distribution enabled intra-datacenter network. An example system includes a first vertical cavity surface emitting laser (VCSEL), a second VCSEL and a network interface controller. The first VCSEL is configured to emit a first optical signal associated with data. The second VCSEL is configured to emit a second optical signal associated with quantum key distribution (QKD). Furthermore, the network interface controller is configured to manage transmission of the first optical signal associated with the first VCSEL and the second optical signal associated with the second VCSEL via an optical communication channel coupled to a network interface module.

Abstract: Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.

Abstract: A memory device includes a memory cell and a controller. The memory cell includes: (a) an array of molecule chains, at least one molecule chain includes: (i) first and second binding sites positioned at first and second ends of the molecule chain, respectively, and (ii) a chain of one or more fullerene derivatives, chemically connecting between the first and second binding sites, (b) source and drain electrodes, electrically connected to the first and second binding sites, respectively, and configured to apply to the array a source-drain voltage (VSD) along a first axis, and (c) a gate electrode, configured to apply to the array a gate voltage (VG) along a second different axis. The controller is configured to perform a data storage operation in the memory cell by (i) applying to the gate electrode a signal for producing the VG, and (ii) applying the VSD between the source and drain electrodes.

Abstract: To address the need to excite lasers at a high frequency while minimizing electrical parasitic components, the present invention embraces a system and method of exciting a laser using a direct injection of an electron beam. The system may include a low voltage electron emission device made of one or more electron sources. When the device is activated, an electrical field is applied to the tip of each electron source, causing the electron source to emit a stream of electrons. The electrons are directed into a VCSEL, causing it to emit an optical signal. In another aspect, a system for random number generation is provided. The system may also include a processor that receives a measurement of an initial random value, executes an algorithm, where at least one input of the algorithm is the initial random value, and determines a final random value.

Abstract: Example vertical cavity surface emitting lasers (VCSELs) include a mesa structure disposed on a substrate, the mesa structure including a first reflector, a second reflector defining at least one diameter, and an active cavity material structure disposed between the first and second reflectors; and a second contact layer disposed at least in part on top of the mesa structure and defining a physical emission aperture having a physical emission aperture diameter. The ratio of the physical emission aperture diameter to the at least one diameter is greater than or approximately 0.172 and/or the ratio of the physical emission aperture diameter to the at least one diameter is less than or approximately 0.36. An example VCSEL includes a substrate; a buffer layer disposed on a portion of the substrate; and an emission structure disposed on the buffer layer.

Abstract: Methods for forming an at least partially oxidized confinement layer of a semiconductor device and corresponding semiconductor devices are provided. The method comprises forming two or more layers of a semiconductor device on a substrate. The layers include an exposed layer and a to-be-oxidized layer. The to-be-oxidized layer is disposed between the substrate and the exposed layer. The method further comprises etching, using a masking process, a pattern of holes that extend through the exposed layer at least to a first surface of the to-be-oxidized layer. Each hole of the pattern of holes extends in a direction that is transverse to a level plane that is parallel to the first surface of the to-be-oxidized layer. The method further comprises oxidizing the to-be-oxidized layer through the pattern of holes by exposing the two or more layers of the semiconductor device to an oxidizing gas to form a confinement layer.

Abstract: Optical communication modules and associated methods and computer program products for performing network communication security are provided. An example optical module includes a substrate, a first optoelectronic component supported by the substrate configured for operation with optical signals having a first wavelength, and a second optoelectronic component supported by the substrate configured for operation with optical signals having a second wavelength. The module further includes an optical communication medium defining a first end in optical communication with the first optoelectronic component and the second optoelectronic component and a second end. The module also includes security circuitry operably connected with the first optoelectronic component and the second optoelectronic component. The security circuitry determines the presence of a noncompliant component coupled with the optical communication medium at the second end based upon operation of the second optoelectronic component.

Abstract: Optical communication modules and associated methods and computer program products for performing network communication security are provided. An example optical module includes a substrate, a first optoelectronic component supported by the substrate configured for operation with optical signals having a first wavelength, and a second optoelectronic component supported by the substrate configured for operation with optical signals having a second wavelength. The module further includes an optical communication medium defining a first end in optical communication with the first optoelectronic component and the second optoelectronic component and a second end. The module also includes security circuitry operably connected with the first optoelectronic component and the second optoelectronic component. The security circuitry determines the presence of a noncompliant component coupled with the optical communication medium at the second end based upon operation of the second optoelectronic component.

Abstract: Various embodiments of improved PIN-type photodiodes are provided. In an example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a second absorbing layer disposed between the first absorbing layer and the n-type contact. The first absorbing layer is characterized by a first absorption coefficient and the second absorbing layer is characterized by a second absorption coefficient. The second absorption coefficient is greater than the first absorption coefficient. In another example embodiment, the PIN-type photodiode includes a p-type contact; an n-type contact; a first absorbing layer disposed between the p-type contact and the n-type contact; and a non-absorbing accelerating layer disposed between absorbing layers and non-absorbing drift layer and the n-type contact.

Abstract: A method and system for large scale Vertical-Cavity Surface-Emitting Laser (VCSEL) binning from wafers to be compatible with a Clock-Data Recovery Unit (CDRU) and/or a VCSEL driver are provided. An illustrative method of binning is provided that includes: for at least a portion of VCSELs on a wafer, measuring a set of representative parameters of the VCSELs, of predetermined DC or small-signal values, and sorting the measured VCSELs into clusters according to the measured set of representative parameters of the VCSELs; further sorting the clusters into sub-groups that comply with specifications of the VCSEL driver; and providing a feedback signal to the CDRU for equalizing control signals provided to the VCSEL driver.

Abstract: A method and system for analyzing Vertical-Cavity Surface-Emitting Lasers (VCSELs) on a wafer are provided. An illustrative method of is provided that includes: applying a stimulus to each of the plurality of VCSELs on the wafer; measuring, for each of the plurality of VCSELs, two or more VCSEL parameters responsive to the stimulus; correlating the measured two or more VCSEL parameters to define a value of a common performance characteristic; and identifying clusters of VCSELs having similar values of the common performance characteristic. The clusters of VCSELs may be determined to collectively meet or not meet an optical performance requirement defined for the VCSELs on the wafer.

Abstract: A universal multi-core fiber (UMCF) interconnect includes multiple optical fiber cores and a shared cladding. Each of the optical fiber cores is configured to convey first optical communication signals having a first carrier wavelength using multi-mode propagation, and to convey second optical communication signals having a second carrier wavelength using single-mode propagation. The shared cladding encloses the multiple optical fiber cores.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a mesa structure disposed on a substrate. The mesa structure includes a first reflector, a second reflector, and an active cavity material structure disposed between the first and second reflectors. The second reflector has an opening extending from a second surface of the second reflector into the second reflector by a predetermined depth. Etching into the second reflector to the predetermined depth reduces the photon lifetime and the threshold gain of the VCSEL, while increasing the modulation bandwidth and maintaining the high reflectivity of the second reflector. Thus, etching the second reflector to the predetermined depth provides an improvement in overshoot control, broader modulation bandwidth, and faster pulsing of the VCSEL such that the VCSEL may provide a high speed, high bandwidth signal with controlled overshoot.

Abstract: Disclosed are a testing unit, system, and method for testing and predicting failure of optical receivers. The testing unit and system are configured to apply different values of current, voltage, heat stress, and illumination load on the optical receivers during testing. The test methods are designed to check dark current, photo current, forward voltage, and drift over time of these parameters.