Patents by Inventor Itsuo Kuroyanagi

Itsuo Kuroyanagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5573448
    Abstract: A template-type wafer polishing method in which a plurality of wafers are polished while they are fitted in the corresponding number of circumferentially spaced engagement holes in a template blank, with the backsides of the respective wafers held by a backing pad, wherein the backing pad has, in its one surface next to the template blank, a plurality of annular grooves each extending along a corresponding one of the engagement grooves in the template blank for relieving a stress concentrated on the peripheral edge of each wafer. The polished wafer is free from deformation, such as declination caused at the peripheral edge thereof due to stress concentration and, hence, has an extremely high degree of flatness. The backing pad and a method of making the same are also disclosed.
    Type: Grant
    Filed: August 18, 1994
    Date of Patent: November 12, 1996
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Yukio Nakazima, Itsuo Kuroyanagi
  • Patent number: 5521781
    Abstract: Proposed is a substrate of a magnetic recording medium in the form of an annular disk made from a single crystal of silicon which is imparted with greatly improved mechanical strengths to withstand mechanical shocks and high-velocity revolution. Different from conventional annular disks as formed by a mechanical working to form the outer contour and the circular center opening, the peripheral surfaces of the inventive annular disk are freed from the work-stressed surface layer by a chemical etching treatment undertaken after the mechanical working.
    Type: Grant
    Filed: May 22, 1995
    Date of Patent: May 28, 1996
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Hideo Kaneko, Yasuaki Nakazato, Toyofumi Aoki, Itsuo Kuroyanagi
  • Patent number: 4243473
    Abstract: Method for detecting crystal defects in semiconductor silicon which comprises treating a preliminarily mirror etched crystal of semiconductor silicon with a detecting solution which is a mixture of about 50% hydrofluoric acid solution and concentrated nitric acid in a ratio of 1000 to 0.1-20 by volume added with an anionic surfactant, and thereafter applying renewedly a mirror etching thereto. Also provided is a detecting solution therefor. Practice of the method causes no occupational disease and no environmental pollution with respect to hexavalent chromium.
    Type: Grant
    Filed: December 20, 1977
    Date of Patent: January 6, 1981
    Assignee: Shin-Etsu Handatai Co. Ltd.
    Inventors: Hisayoshi Yamaguchi, Itsuo Kuroyanagi