Abstract: An imaging apparatus includes a plurality of pixels, a signal holding unit, first and second control electrodes. Each of the plurality of pixels includes a photoelectric conversion unit, and an amplification element to amplify signals based on signal charges generated by the photoelectric conversion unit, in which the plurality of pixels output signals for performing a phase contrast detection type of focal point detection. The signal holding unit is in an electrical pathway between an output node of the photoelectric conversion unit and an input node of the amplification element, in which signals for performing the phase contrast detection type of focal point detection are held. The first control electrode is configured to transfer a signal of the photoelectric conversion unit to the signal holding unit. The second control electrode is configured to transfer a signal for performing the phase difference detection type of focal point detection.

Abstract: An image pickup device, an image pickup system, and a movable body that include a conductive line in which a potential changes in a direction opposite to a direction of a change in a potential of a control line used to perform a global electronic shutter operation.

Abstract: An image pickup device, an image pickup system, and a movable body that include a conductive line in which a potential changes in a direction opposite to a direction of a change in a potential of a control line used to perform a global electronic shutter operation.

Abstract: An imaging apparatus includes a plurality of pixels, a signal holding unit, first and second control electrodes. Each of the plurality of pixels includes a photoelectric conversion unit, and an amplification element to amplify signals based on signal charges generated by the photoelectric conversion unit, in which the plurality of pixels output signals for performing a phase contrast detection type of focal point detection. The signal holding unit is in an electrical pathway between an output node of the photoelectric conversion unit and an input node of the amplification element, in which signals for performing the phase contrast detection type of focal point detection are held. The first control electrode is configured to transfer a signal of the photoelectric conversion unit to the signal holding unit. The second control electrode is configured to transfer a signal for performing the phase difference detection type of focal point detection.

Abstract: An imaging apparatus includes a plurality of pixels, a signal holding unit, first and second control electrodes. Each of the plurality of pixels includes a photoelectric conversion unit, and an amplification element to amplify signals based on signal charges generated by the photoelectric conversion unit, in which the plurality of pixels output signals for performing a phase contrast detection type of focal point detection. The signal holding unit is in an electrical pathway between an output node of the photoelectric conversion unit and an input node of the amplification element, in which signals for performing the phase contrast detection type of focal point detection are held. The first control electrode is configured to transfer a signal of the photoelectric conversion unit to the signal holding unit. The second control electrode is configured to transfer a signal for performing the phase difference detection type of focal point detection.

Abstract: An image pickup apparatus includes: first and second photoelectric conversion units that are disposed in a semiconductor substrate, are configured to accumulate charges, and are of a first conductivity type; an electrode that is disposed on a region between the first and second photoelectric conversion units and is configured to control an electrical conduction between the first and second photoelectric conversion units; a first semiconductor region that is formed under the electrode and between the first and second photoelectric conversion units, is continuous from the first photoelectric conversion unit to the second photoelectric conversion unit, and is of the first conductivity type; and a second semiconductor region that is formed under the electrode and between the first and second photoelectric conversion units, is provided at a depth different from that of the first semiconductor region, and is of a second conductivity type.

Abstract: An electronic device according to one or more embodiments of the present invention comprises an output line, a current mirror circuit and a comparator. Current signals from a plurality of signal sources are output to the output line. The current mirror circuit is electrically connected to the output line. The comparator is configured to compare a mirrored current signal from the current mirror circuit with a reference current signal. The comparator is configured to output a signal representing a comparison result of amplitudes of the mirrored current signal and the reference current signal.

Abstract: An imaging apparatus includes a plurality of pixels, a signal holding unit, first and second control electrodes. Each of the plurality of pixels includes a photoelectric conversion unit, and an amplification element to amplify signals based on signal charges generated by the photoelectric conversion unit, in which the plurality of pixels output signals for performing a phase contrast detection type of focal point detection. The signal holding unit is in an electrical pathway between an output node of the photoelectric conversion unit and an input node of the amplification element, in which signals for performing the phase contrast detection type of focal point detection are held. The first control electrode is configured to transfer a signal of the photoelectric conversion unit to the signal holding unit. The second control electrode is configured to transfer a signal for performing the phase difference detection type of focal point detection.

Abstract: An imaging apparatus includes a plurality of pixels, a signal holding unit, first and second control electrodes. Each of the plurality of pixels includes a photoelectric conversion unit, and an amplification element to amplify signals based on signal charges generated by the photoelectric conversion unit, in which the plurality of pixels output signals for performing a phase contrast detection type of focal point detection. The signal holding unit is in an electrical pathway between an output node of the photoelectric conversion unit and an input node of the amplification element, in which signals for performing the phase contrast detection type of focal point detection are held. The first control electrode is configured to transfer a signal of the photoelectric conversion unit to the signal holding unit. The second control electrode is configured to transfer a signal for performing the phase difference detection type of focal point detection.

Abstract: An image pickup apparatus includes: first and second photoelectric conversion units that are disposed in a semiconductor substrate, are configured to accumulate charges, and are of a first conductivity type; an electrode that is disposed on a region between the first and second photoelectric conversion units and is configured to control an electrical conduction between the first and second photoelectric conversion units; a first semiconductor region that is formed under the electrode and between the first and second photoelectric conversion units, is continuous from the first photoelectric conversion unit to the second photoelectric conversion unit, and is of the first conductivity type; and a second semiconductor region that is formed under the electrode and between the first and second photoelectric conversion units, is provided at a depth different from that of the first semiconductor region, and is of a second conductivity type.

Abstract: An image pickup apparatus includes a plurality of pixels each including a photoelectric conversion unit, an amplification element configured to amplify a signal based on a signal charge generated in the photoelectric conversion unit, and a first signal holding unit and a second signal holding unit located at a stage following the first signal holding unit and arranged on an electric path between the photoelectric conversion unit and an input node of the amplification element, in which a coverage by a light-shielding member of the first signal holding unit is lower than a coverage by a light-shielding member of the second signal holding unit.

Abstract: An embodiment is an imaging apparatus including a plurality of unit cells. The imaging apparatus includes a first conductive member electrically connected to gates of the plurality of first transfer transistors, a second conductive member electrically connected to gates of the plurality of second transfer transistors, a third conductive member disposed adjacently to the first conductive member in a same wiring layer as the first conductive member and electrically connected to a plurality of nodes each included in respective one of the plurality of unit cells, and a fourth conductive member disposed adjacently to the second conductive member in a same wiring layer as the second conductive member. An opposing length of the first conductive member and the third conductive member is longer than an opposing length of the second conductive member and the fourth conductive member.

Abstract: One or more embodiments relate to an image pickup apparatus including multiple pixels. Each of the multiple pixels includes a photoelectric-conversion unit, and an amplifier which outputs a signal based on charge generated by the photoelectric-conversion unit. Within an electric path between the photoelectric-conversion unit and an input node of the amplifier, there are disposed a first holder, a second holder disposed following the first holder, a first transfer unit which transfers charge to the first holder, a second transfer unit which transfers charge of the first holder to the second holder, and a third transfer unit which transfers charge of the second holder. The first holder includes a first-conductive-type first semiconductor region holding charge. The second holder includes a first-conductive-type second semiconductor region holding charge. Impurity concentration of the first semiconductor region is lower than impurity concentration of the second semiconductor region.

Abstract: An embodiment is an imaging apparatus including a plurality of unit cells. The imaging apparatus includes a first conductive member electrically connected to gates of the plurality of first transfer transistors, a second conductive member electrically connected to gates of the plurality of second transfer transistors, a third conductive member disposed adjacently to the first conductive member in a same wiring layer as the first conductive member and electrically connected to a plurality of nodes each included in respective one of the plurality of unit cells, and a fourth conductive member disposed adjacently to the second conductive member in a same wiring layer as the second conductive member. An opposing length of the first conductive member and the third conductive member is longer than an opposing length of the second conductive member and the fourth conductive member.