Abstract: Systems and methods for restoring cognitive function are disclosed. In some implementations, a method includes, at a computing device, separately stimulating one or more of lateral and medial entorhinal afferents and other structures connecting to a hippocampus of an animal subject in accordance with a plurality of predefined stimulation patterns, thereby attempting to restore object-specific memories and location-specific memories; collecting a plurality of one or more of macro- and micro-recordings of the stimulation of hippocampalentorhinal cortical (HEC) system; and refining the computational model for restoring individual memories in accordance with a portion of the plurality of one or more of macro- and micro-recordings.

Abstract: The various embodiments described herein include methods, devices, and systems for enhancement of memory. In one aspect, a method includes: (1) implanting intracranial electrodes in a patient, wherein the electrodes are placed selectively at a specific brain site; (2) determining a threshold for eliciting an after-discharge threshold of the patient, and (3) stimulating the electrodes with current set below the after-discharge threshold while the patient is in a particular phase of sleep so as to enhance memory of the patient.

Abstract: Systems and methods for restoring cognitive function are disclosed. In some implementations, a method includes, at a computing device, separately stimulating one or more of lateral and medial entorhinal afferents and other structures connecting to a hippocampus of an animal subject in accordance with a plurality of predefined stimulation patterns, thereby attempting to restore object-specific memories and location-specific memories; collecting a plurality of one or more of macro- and micro-recordings of the stimulation of hippocampalentorhinal cortical (HEC) system; and refining the computational model for restoring individual memories in accordance with a portion of the plurality of one or more of macro- and micro-recordings.

Abstract: The various embodiments described herein include methods, devices, and systems for enhancement of memory. In one aspect, a method includes: (1) implanting intracranial electrodes in a patient, wherein the electrodes are placed selectively at a specific brain site; (2) determining a threshold for eliciting an after-discharge threshold of the patient, and (3) stimulating the electrodes with current set below the after-discharge threshold while the patient is in a particular phase of sleep so as to enhance memory of the patient.

Abstract: A site-specific deep brain stimulation for enhancement of memory is described. A method of the site-specific deep brain stimulation for enhancement of memory may include implanting intracranial depth electrodes in a patient, wherein the electrodes are placed in right and/or left entorhinal regions, and stimulating the electrodes with current set below an after-discharge threshold. The method may include stimulation at a specific brain site in the medial temporal lobe, stimulation (ODTS) at specific stages of information processing. A system for site specific deep brain stimulation of entorhinal regions during specific stages of information processing is also described.

Abstract: A brain stimulation device includes: a threaded head portion; a needle portion connected to the threaded head portion; at least one wireless power source arranged in proximity to the threaded head portion, the at least one wireless power source being configured to generate electrical energy for the brain stimulation device responsive to a wireless power signal being received by the brain stimulation device; and at least one electrode arranged at least partially on an outside surface of the needle portion in electrical communication with the at least one wireless power source, wherein the at least one electrode is configured to transmit an electrical signal responsive to receiving the electrical energy from the at least one wireless power source. A method of using the brain stimulation device is also described.

Abstract: A site-specific deep brain stimulation for enhancement of memory is described. A method of the site-specific deep brain stimulation for enhancement of memory may include implanting intracranial depth electrodes in a patient, wherein the electrodes are placed in right and/or left entorhinal regions, and stimulating the electrodes with current set below an after-discharge threshold. The method may include stimulation at a specific brain site in the medial temporal lobe, stimulation (ODTS) at specific stages of information processing. A system for site specific deep brain stimulation of entorhinal regions during specific stages of information processing is also described.