Abstract: Systems, methods, and devices provide management of power domains. Methods include activating a first power domain of a memory controller in response to receiving a memory command associated with a storage location coupled to the memory controller, and performing a first portion of a sequence of operations determined based on the memory command, the first portion being performed using a first plurality of processing elements included in the first power domain. Methods further include activating a second power domain of the memory controller based on a timing determined by the sequence of operations, and performing a second portion of the sequence of operations using a second plurality of processing elements included in the second power domain.

Abstract: Systems, methods, and devices prevent data loss in memory devices. Systems may include a non-volatile memory device that includes a first data unit configured to store data for the non-volatile memory device and associated metadata, and a second data unit configured to store data for the non-volatile memory device and associated metadata, wherein the first data unit and second data unit are configured to alternate storing a most recent version of the data and associated metadata. The systems may also include control circuitry configured to read metadata from the first data unit and the second data unit, identify the first data unit as an inactive data unit based on contents of the first data unit and the second data unit, and perform one or more update operations such that the first data unit is updated and set as an active unit when the update operations are complete.

Abstract: Systems, methods, and devices prevent data loss in memory devices. Systems may include a non-volatile memory device that includes a first data unit configured to store data for the non-volatile memory device and associated metadata, and a second data unit configured to store data for the non-volatile memory device and associated metadata, wherein the first data unit and second data unit are configured to alternate storing a most recent version of the data and associated metadata. The systems may also include control circuitry configured to read metadata from the first data unit and the second data unit, identify the first data unit as an inactive data unit based on contents of the first data unit and the second data unit, and perform one or more update operations such that the first data unit is updated and set as an active unit when the update operations are complete.

Abstract: Systems, methods, and devices provide management of power domains. Methods include activating a first power domain of a memory controller in response to receiving a memory command associated with a storage location coupled to the memory controller, and performing a first portion of a sequence of operations determined based on the memory command, the first portion being performed using a first plurality of processing elements included in the first power domain. Methods further include activating a second power domain of the memory controller based on a timing determined by the sequence of operations, and performing a second portion of the sequence of operations using a second plurality of processing elements included in the second power domain.

Abstract: Systems, methods, and devices prevent data loss in memory devices. Systems may include a non-volatile memory device that includes a first data unit configured to store data for the non-volatile memory device and associated metadata, and a second data unit configured to store data for the non-volatile memory device and associated metadata, wherein the first data unit and second data unit are configured to alternate storing a most recent version of the data and associated metadata. The systems may also include control circuitry configured to read metadata from the first data unit and the second data unit, identify the first data unit as an inactive data unit based on contents of the first data unit and the second data unit, and perform one or more update operations such that the first data unit is updated and set as an active unit when the update operations are complete.

Abstract: Disclosed are methods and circuits for performing recovery associated with programming of non-volatile memory (NVM) array cells. According to embodiments, there are provided methods and circuits for programming NVM cells, including: (1) erasing NVM array cells; (2) loading an SRAM with user data; (3) if programming is successful, then flipping bits in the SRAM; and (4) if programming is not successful, reading data back from the array to the SRAM.

Abstract: A method of performing recovery in conjunction with programming an array of NVM cells. First, erasing the array cells and loading an SRAM with user data. When programming the cells, flip bits in the SRAM which are successfully programmed (pass PV). If programming is not successful, read the failed data from the array, and if the SRAM bits were not successfully programmed, do not change them. Write the other bits (not programmed or successfully programmed) from the array to the SRAM. Before reading the failed data, the SRAM may be copied to a second SRAM. If the restore did not work, an ED mechanism may be applied, and if the ED bits to not align with the data, move a read reference (RD), copy the second SRAM to the original SRAM, and attempt reading again, until the data is successfully recovered.