Abstract: Aspects of the present invention relate to a active roll bar damper assembly (1) suitable for an active roll bar (5). The active roll bar damper assembly (1) includes a first subassembly (15-1) and a second subassembly (15-2) for mounting to the active roll bar (5). The first subassembly (15-1) includes a rigid first mass (17) having a first aperture (27). At least one first spring (21-n) is disposed in the first aperture (27) for positioning between the active roll bar (5) and the first mass (17). The second subassembly (15-2) includes a rigid second mass (37) having a second aperture (47). At least one second spring (41-n) is disposed in the second aperture (47) for positioning between the active roll bar (5) and the first mass (17). The first and second masses (17, 37) are configured to engage each other to limit compression of the first and second springs (21-n, 41-n).

Abstract: By arranging both a conductive and non-conductive resistive memory cell in a cross coupled arrangement to facilitate reading a data state the memory cells can have very small differences in their resistance values and still read correctly. This allows both of the memory cells' resistances to change over time and still have enough difference between their resistances to read the desired data state that was programmed. A pair of ReRAM or CBRAM resistive memory devices are configured as a one bit memory cell and used to store a single data bit wherein one of the resistive memory devices is in an ERASE condition and the other resistive memory devices of the pair is in a WRITE condition. Reading the resistance states of the resistive memory device pairs is accomplished without having to use a reference voltage or current since a trip-point is between the conductive states thereof.

Abstract: By arranging both a conductive and non-conductive resistive memory cell in a cross coupled arrangement to facilitate reading a data state the memory cells can have very small differences in their resistance values and still read correctly. This allows both of the memory cells' resistances to change over time and still have enough difference between their resistances to read the desired data state that was programmed. A pair of ReRAM or CBRAM resistive memory devices are configured as a one bit memory cell and used to store a single data bit wherein one of the resistive memory devices is in an ERASE condition and the other resistive memory devices of the pair is in a WRITE condition. Reading the resistance states of the resistive memory device pairs is accomplished without having to use a reference voltage or current since a trip-point is between the conductive states thereof.

Abstract: A current limited voltage supply including a transistor and a capacitor is provided for powering digital logic cells of an integrated circuit. The transistor is connected in a current mirror configuration, such that a constant reference current is mirrored through the transistor to create a first supply current. The transistor is coupled to the digital logic cells and the capacitor. The first supply current is used to charge the capacitor while the digital logic cells are not switching. While the digital logic cells are switching, the capacitor discharges to the digital logic cells, thereby providing the digital logic cells with sufficient energy to implement high-speed switching. The capacitor minimizes voltage fluctuations within in the current limited voltage supply, such that analog circuitry can be reliably powered from a different branch of the same current mirror circuit.

Abstract: A current limited voltage supply including a transistor and a capacitor is provided for powering digital logic cells of an integrated circuit. The transistor is connected in a current mirror configuration, such that a constant reference current is mirrored through the transistor to create a first supply current. The transistor is coupled to the digital logic cells and the capacitor. The first supply current is used to charge the capacitor while the digital logic cells are not switching. While the digital logic cells are switching, the capacitor discharges to the digital logic cells, thereby providing the digital logic cells with sufficient energy to implement high-speed switching. The capacitor minimizes voltage fluctuations within in the current limited voltage supply, such that analog circuitry can be reliably powered from a different branch of the same current mirror circuit.

Abstract: A crystal oscillator circuit having a parallel resonant frequency that is adjustable by switching trim capacitors in parallel with a crystal.