Abstract: The present invention relates to a method for determining an actual junction temperature (Tj) and/or an actual collector current (IC) of an IGBT device, wherein the IGBT device has a main emitter (EM) and an auxiliary emitter (EA), comprising the steps of; measuring the characteristics of an emitter voltage drop (VEE?) as a difference between a main emitter voltage (VE) at the main emitter (EM) and an auxiliary emitter voltage (VE?) at the auxiliary emitter (EA) during a switching operation of the IGBT device; and determining the junction temperature and/or the collector current (IC) based on the characteristics of the emitter voltage drop (VEE?).

Abstract: A termination region of an IGBT is described, in which surface p-rings are combined with oxide/polysilicon-filled trenches, buried p-rings and surface field plates, so as to obtain an improved distribution of potential field lines in the termination region. The combination of surface ring termination and deep ring termination offers a significant reduction in the amount silicon area which is required for the termination region.

Abstract: A system and method are provided for monitoring in real time the operating state of an IGBT device, to determine a junction temperature and/or the remaining lifetime of an IGBT device. The system includes a differential unit configured to receive a gate-emitter voltage characteristic of the IGBT device to be measured and to differentiate the gate-emitter voltage characteristic to obtain pulses correlating with edges formed by a Miller plateau phase during a switch-off phase of the IGBT device. The system also includes a timer unit configured to measure the time delay between the obtained pulses indicating the start and end of the Miller plateau phase during the switch-off phase of the IGBT device, and a junction temperature calculation unit configured to determine at least one of the junction temperature of the IGBT device and/or the remaining lifetime of the IGBT device based on the measured time delay.

Abstract: The precursor of a hydroprocessing catalyst is made by impregnating a metal oxide component comprising at least one metal from Group 6 of the Periodic Table and at least one metal from Groups 8-10 of the Periodic Table with an amide formed from a first organic compound containing at least one amine group, and a second organic compound containing at least one carboxylic acid group. Following impregnation heat treatment follows to form in situ generated unsaturation additional to that in the two organic compounds. The catalyst precursor is sulfided to form an active, sulfide hydroprocessing catalyst.

Abstract: A process for hydrotreating a first aromatics- and sulfur-containing hydrocarbon feed using a fresh supported CoMo catalyst, includes treating the fresh catalyst under first hydrotreating conditions with a second hydrocarbon feed having a lower aromatics content than the first feed.

Abstract: An insulated gate bipolar device is disclosed which can include layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side in the following order: a source region of a first conductivity type, a base layer of a second conductivity type, which contacts the emitter electrode in a contact area, an enhancement layer of the first conductivity type, a floating compensation layer of the second conductivity type having a compensation layer thickness tp, a drift layer of the first conductivity type having lower doping concentration than the enhancement layer and a collector layer of the second conductivity type.

Abstract: Described herein is a catalyst precursor composition comprising at least one metal from Group 6 of the Periodic Table of the Elements, at least one metal from Groups 8-10 of the Periodic Table of the Elements, and a reaction product formed from (i) a first organic compound containing at least one amine group, and (ii) a second organic compound separate from said first organic compound and containing at least one carboxylic acid group. A process for preparing the catalyst precursor composition is also described, as is sulfiding the bulk mixed metal oxide catalyst precursor composition to form a hydroprocessing catalyst.

Abstract: Described herein is a catalyst precursor composition comprising at least one metal from Group 6 of the Periodic Table of the Elements, at least one metal from Groups 8-10 of the Periodic Table of the Elements, and a reaction product formed from (i) a first organic compound containing at least one amine group and at least 10 carbon atoms or (ii) a second organic compound containing at least one carboxylic acid group and at least 10 carbon atoms, but not both, wherein the reaction product contains additional unsaturated carbon atoms, relative to the first or second organic compound, wherein the metals of the catalyst precursor composition are arranged in a crystal lattice, and wherein the reaction product is not located within the crystal lattice. A process for preparing the catalyst precursor composition is also described, as is sulfiding the catalyst precursor composition to form a hydroprocessing catalyst.

Abstract: An insulated gate bipolar device is disclosed which can include layers of different conductivity types between an emitter electrode on an emitter side and a collector electrode on a collector side in the following order: a source region of a first conductivity type, a base layer of a second conductivity type, which contacts the emitter electrode in a contact area, an enhancement layer of the first conductivity type, a floating compensation layer of the second conductivity type having a compensation layer thickness tp, a drift layer of the first conductivity type having lower doping concentration than the enhancement layer and a collector layer of the second conductivity type.

Abstract: A process for hydrotreating a first aromatics- and sulfur-containing hydrocarbon feed using a fresh supported CoMo catalyst, includes treating the fresh catalyst under first hydrotreating conditions with a second hydrocarbon feed having a lower aromatics content than the first feed.

Abstract: Described herein is a catalyst precursor composition comprising at least one metal from Group 6 of the Periodic Table of the Elements, at least one metal from Groups 8-10 of the Periodic Table of the Elements, and a reaction product formed from (i) a first organic compound containing at least one amine group and at least 10 carbon atoms or (ii) a second organic compound containing at least one carboxylic acid group and at least 10 carbon atoms, but not both, wherein the reaction product contains additional unsaturated carbon atoms, relative to the first or second organic compound, wherein the metals of the catalyst precursor composition are arranged in a crystal lattice, and wherein the reaction product is not located within the crystal lattice. A process for preparing the catalyst precursor composition is also described, as is sulfiding the catalyst precursor composition to form a hydroprocessing catalyst.

Abstract: Described herein is a catalyst precursor composition comprising at least one metal from Group 6 of the Periodic Table of the Elements, at least one metal from Groups 8-10 of the Periodic Table of the Elements, and a reaction product formed from (i) a first organic compound containing at least one amine group, and (ii) a second organic compound separate from said first organic compound and containing at least one carboxylic acid group. A process for preparing the catalyst precursor composition is also described, as is sulfiding the bulk mixed metal oxide catalyst precursor composition to form a hydroprocessing catalyst.

Abstract: A process for hydrotreating a first aromatics- and sulfur-containing hydrocarbon feed using a fresh supported CoMo catalyst, includes treating the fresh catalyst under first hydrotreating conditions with a second hydrocarbon feed having a lower aromatics content than the first feed.

Abstract: A diode for fast switching applications includes a base layer of a first conductivity type with a first main side and a second main side opposite the first main side, an anode layer of a second conductivity type, which is arranged on the second main side, a plurality of first zones of the first conductivity type with a higher doping concentration than the base layer, and a plurality of second zones of the second conductivity type. The first and second zones are arranged alternately on the first main side. A cathode electrode is arranged on top of the first and second zones on the side of the zones which lies opposite the base layer, and a anode electrode is arranged on top of the anode layer on the side of the anode layer which lies opposite the base layer. The base layer includes a first sublayer, which is formed by the second main sided part of the base layer, and a second sublayer, which is formed by the first main sided part of the base layer.