Patents by Inventor Ivan Avrutsky

Ivan Avrutsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230046187
    Abstract: A photoacoustic tomography system includes a first ring-shaped mirror having a central axis therethrough and configured to converge light inwardly towards the central axis and a subject, and an adjustment mechanism configured to move the first ring-shaped mirror along the central axis to a plurality of different positions. Each position of the plurality of different positions allows the first ring-shaped mirror to illuminate a respective ring of light around a respective portion of the subject, and an acoustic signal detector is movable along the central axis such that acoustic signals can be detected from the respective portion of the subject when illuminated by the first ring-shaped mirror while at each respective position of the plurality of different positions.
    Type: Application
    Filed: October 24, 2022
    Publication date: February 16, 2023
    Inventors: Ivan Avrutsky, Mohammad Mehrmohammadi
  • Patent number: 11543571
    Abstract: A transmission filter apparatus is provided that includes: (i) a substrate to serve as a foundation for the apparatus; (ii) a layer containing resonant dielectric cavities separated by conductive regions. The dimensions and design of the dielectric cavities, thickness of the layer, and substrate, dielectric and conductive materials are chosen to achieve resonant transmission of selected wavelengths. In a particular one or more embodiments, the layer is one dimensional, i.e. you have dielectric cavities along one axis in the plane that are comparatively infinity long in the parallel plane. In a particular one or more embodiments, the layer is two dimensional, i.e. you have dielectric cavities along both axis in the plane. The dimensions in each plane may or may not be equal. In a specific one or more embodiments, the dielectric cavities are terminated on the top and/or bottom by thin metal films with small apertures or tapers.
    Type: Grant
    Filed: June 16, 2020
    Date of Patent: January 3, 2023
    Assignee: United States of America as represented by the Secretary of the Air Force
    Inventors: Justin W. Cleary, Evan M. Smith, Ricky D. Gibson, Jr., Shivashankar R. Vangala, Joshua Hendrickson, Ivan Avrutsky
  • Publication number: 20210041612
    Abstract: A transmission filter apparatus is provided that includes: (i) a substrate to serve as a foundation for the apparatus; (ii) a layer containing resonant dielectric cavities separated by conductive regions. The dimensions and design of the dielectric cavities, thickness of the layer, and substrate, dielectric and conductive materials are chosen to achieve resonant transmission of selected wavelengths. In a particular one or more embodiments, the layer is one dimensional, i.e. you have dielectric cavities along one axis in the plane that are comparatively infinity long in the parallel plane. In a particular one or more embodiments, the layer is two dimensional, i.e. you have dielectric cavities along both axis in the plane. The dimensions in each plane may or may not be equal. In a specific one or more embodiments, the dielectric cavities are terminated on the top and/or bottom by thin metal films with small apertures or tapers.
    Type: Application
    Filed: June 16, 2020
    Publication date: February 11, 2021
    Inventors: Justin W. Cleary, Evan M. Smith, Ricky D. Gibson, Shivashankar R. Vangala, Joshua Hendrickson, Ivan Avrutsky
  • Publication number: 20210015368
    Abstract: An ultrasonic photoacoustic tomography system includes a mirror arrangement configured to redirect an incoming light beam defining a central axis such that the mirror arrangement reflects the incoming light beam to form a converging ring-shaped light beam. This converging ring-shaped light beam directs light originating from the incoming light beam radially inward covering a 360° circumferential range around the central axis. A closed-geometry acoustic detector is configured to pick up reactive sound waves from tissue irradiated by the converging ring-shaped light beam over the 360° circumferential range.
    Type: Application
    Filed: July 20, 2018
    Publication date: January 21, 2021
    Inventors: Ivan Avrutsky, Mohammad Mehrmohammadi
  • Patent number: 8355604
    Abstract: A silicon-on-insulator device has a waveguide having a carrier wafer layer, a buffer layer, a guiding layer, and a cladding layer. The silicon-on-insulator is additionally provided with a polarizing arrangement deposited on a predetermined portion of the waveguide, the polarizing arrangement being provided with a bottom metal layer, a dielectric gap, and a top metal layer, the bottom metal layer being deposited on the cladding layer. A protection layer formed of SiO2 overlies the top metal layer. The polarizing arrangement attenuates preferentially the electromagnetic energy that is propagated in the waveguide in the TM transmission mode. There is formed a gap plasmon-polariton (GPP) confined to the dielectric gap, the dielectric gap having a high optical loss characteristic. In accordance with a method aspect, there are provided the steps of forming a silicon-on-insulator waveguide arrangement and depositing a polarizer structure that absorbs the electromagnetic energy in the TM transmission mode.
    Type: Grant
    Filed: November 3, 2009
    Date of Patent: January 15, 2013
    Assignee: Wayne State University
    Inventor: Ivan Avrutsky
  • Publication number: 20110170822
    Abstract: A silicon-on-insulator device has a waveguide having a carrier wafer layer, a buffer layer, a guiding layer, and a cladding layer. The silicon-on-insulator is additionally provided with a polarizing arrangement deposited on a predetermined portion of the waveguide, the polarizing arrangement being provided with a bottom metal layer, a dielectric gap, and a top metal layer, the bottom metal layer being deposited on the cladding layer. A protection layer formed of SiO2 overlies the top metal layer. The polarizing arrangement attenuates preferentially the electromagnetic energy that is propagated in the waveguide in the TM transmission mode. There is formed a gap plasmon-polariton (GPP) confined to the dielectric gap, the dielectric gap having a high optical loss characteristic. In accordance with a method aspect, there are provided the steps of forming a silicon-on-insulator waveguide arrangement and depositing a polarizer structure that absorbs the electromagnetic energy in the TM transmission mode.
    Type: Application
    Filed: November 3, 2009
    Publication date: July 14, 2011
    Inventor: Ivan Avrutsky
  • Patent number: 7799707
    Abstract: Methods of forming a gated, self-aligned nano-structures for electron extraction are disclosed. One method of forming the nano-structure comprises irradiating a first surface of a thermally conductive laminate to melt an area across the first surface of the laminate. The laminate comprises a thermally conductive film and a patterned layer disposed on the first surface of the film. The patterned layer has a pattern formed therethrough, defining the area for melting. The film is insulated at a second surface thereof to provide two-dimensional heat transfer laterally in plane of the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form the nano-structure having an apical nano-tip for electron emission centered in an electrically isolated aperture that serves as a gate electrode to control electron extraction in a gated field emitter device.
    Type: Grant
    Filed: August 1, 2008
    Date of Patent: September 21, 2010
    Assignee: Wayne State University
    Inventors: Ronald J. Baird, Daniel G. Georgiev, Ivan Avrutsky, Golam Newaz, Gregory W. Auner
  • Publication number: 20090142936
    Abstract: Methods of forming a gated, self-aligned nano-structures for electron extraction are disclosed. One method of forming the nano-structure comprises irradiating a first surface of a thermally conductive laminate to melt an area across the first surface of the laminate. The laminate comprises a thermally conductive film and a patterned layer disposed on the first surface of the film. The patterned layer has a pattern formed therethrough, defining the area for melting. The film is insulated at a second surface thereof to provide two-dimensional heat transfer laterally in plane of the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form the nano-structure having an apical nano-tip for electron emission centered in an electrically isolated aperture that serves as a gate electrode to control electron extraction in a gated field emitter device.
    Type: Application
    Filed: August 1, 2008
    Publication date: June 4, 2009
    Applicant: WAYNE STATE UNIVERSITY
    Inventors: RONALD J. BAIRD, Daniel G. Georgiev, Ivan Avrutsky, Golam Newaz, Gregory W. Auner
  • Patent number: 7402445
    Abstract: Methods of forming a nano-structure for electron extraction are disclosed. One method of forming a nano-structure comprises irradiating an area on a first surface of a thermal conductive film to melt the area across the film. The film is insulated on a second surface to provide two-dimensional heat transfer across the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form a nano-structure having an apical nano-tip for electron extraction.
    Type: Grant
    Filed: May 12, 2006
    Date of Patent: July 22, 2008
    Assignee: Wayne State University
    Inventors: Daniel G. Georgiev, Ivan Avrutsky, Ronald J. Baird, Golam Newaz, Gregory W. Auner
  • Patent number: 7262845
    Abstract: A miniaturized diffractive imaging spectrometer (DIS) has a footprint less than 2×1 mm2, is about 2.5 mm tall (excluding an image detector, which in some embodiments may be a CCD matrix), and covers the entire visible spectral range from 400 nm to 700 nm with resolution of approximately from 2 nm to 4 nm across the field. The DIS is able to function with multiple input waveguide channels, and is flexible in its various possible configurations, as it can be designed to achieve better resolution or higher number of channels or wider spectral range or smaller size.
    Type: Grant
    Filed: May 27, 2004
    Date of Patent: August 28, 2007
    Assignee: Wayne State University
    Inventor: Ivan Avrutsky
  • Publication number: 20060258133
    Abstract: Methods of forming a nano-structure for electron extraction are disclosed. One method of forming a nano-structure comprises irradiating an area on a first surface of a thermal conductive film to melt the area across the film. The film is insulated on a second surface to provide two-dimensional heat transfer across the film. The liquid density of the film is greater than the solid density thereof. The method further comprises cooling the area inwardly from the periphery thereof to form a nano-structure having an apical nano-tip for electron extraction.
    Type: Application
    Filed: May 12, 2006
    Publication date: November 16, 2006
    Inventors: Daniel Georgiev, Ivan Avrutsky, Ronald Baird, Golam Newaz, Gregory Auner
  • Publication number: 20050068526
    Abstract: A miniaturized diffractive imaging spectrometer (DIS) has a footprint less than 2×1 mm2, is about 2.5 mm tall (excluding an image detector, which in some embodiments may be a CCD matrix), and covers the entire visible spectral range from 400 nm to 700 nm with resolution of approximately from 2 nm to 4 nm across the field. The DIS is able to function with multiple input waveguide channels, and is flexible in its various possible configurations, as it can be designed to achieve better resolution or higher number of channels or wider spectral range or smaller size.
    Type: Application
    Filed: May 27, 2004
    Publication date: March 31, 2005
    Inventor: Ivan Avrutsky
  • Patent number: 6141370
    Abstract: A superimposed grating tunable WDM semiconductor laser is provided comprising a grating structure is a binary superimposed grating comprising a plurality of segments of equal dimension, s, each segment having one of two values of refractive index, whereby the grating structure is provided by a binary modulation of the refractive index modulation of segments s along the length of the grating.Thus, for a superimposed grating structure for an optoelectronic device for providing a spectrum comprising j reflection peaks at wavelengths .lambda..sub.j, the grating comprising a binary superimposed grating (BSG) having a sequence of a plurality of segments of equal size s, each segment of the sequence having a refractive index of one of two values wherein the effective waveguide index of the ith segment n.sub.i.sup.0 (.lambda.) is allowed to be changed by .DELTA.n.multidot.(m-1/2) with m=1 or m=0: ##EQU1## where i=1,2,3 . . . is the segment number, for digital position i.multidot.s, n.sup.0 (.lambda.
    Type: Grant
    Filed: February 19, 1999
    Date of Patent: October 31, 2000
    Assignee: Northern Telecom Limited
    Inventors: Ivan Avrutsky, Hanan Anis, Toshi Makino, Jingming Xu