Abstract: A rotational negative-inertia converter (RNIC) has a housing enclosing a flywheel configured to rotate around an axis of symmetry; a motor with a stator attached to the housing and a rotor attached to the flywheel to rotate it around the axis of symmetry; a housing angular accelerometer attached to said housing; a flywheel angular accelerometer; and a controller configured to receive measured accelerometer values from the accelerometers. The controller is configured to drive the motor to maintain the angular acceleration of the flywheel at a value proportional to the housing angular acceleration, with a predetermined proportionality constant. A method for calibrating an ADCS testbed comprising a DUT holder with three RNICs includes: using measured angular velocities of the DUT holder and RNIC flywheels, and ZGT data, to compute moments of inertia of the DUT holder with and without a satellite with ADCS, allowing compensation for those moments by the RNICs.

Abstract: Provided herein are methods and systems allowing for real-time measurement of cellular drug-target engagement. Use of fluorescence-based cell target engagement technology with real-time gene expression machinery provides several advantages over prior systems. Integration with real-time gene expression machinery without bias to any particular design or brand is provided. Programmability of cell target engagement methodology, such that any software in real-time gene expression machine can seamlessly be used for programming is provided. Single or multiple machine integration for the use of cell target engagement technology is provided. Compatibility with multiple multi-well plate setups is provided. Development of unique modifications of real-time (quantitative) gene expression software to detect real-time cellular drug-target engagement to work efficiently with existing gene expression machinery is provided.

Abstract: Provided herein are containers comprising a composition comprising an antibody comprising a heavy chain comprising SEQ ID NO:1 and a light chain comprising SEQ ID NO:2. The containers can be bottles or vials, for example, glass or polyethylene terephthalate G (PETG) bottles or vials. Also provided are kits comprising the containers and methods of treating cancer using the antibodies from the containers.

Abstract: Provided herein are containers comprising a composition comprising an antibody comprising a heavy chain comprising SEQ ID NO:1 and a light chain comprising SEQ ID NO:2. The containers can be bottles or vials, for example, glass or polyethylene terephthalate G (PETG) bottles or vials. Also provided are kits comprising the containers and methods of treating cancer using the antibodies from the containers.

Abstract: Provided herein are methods amenable to high-throughput multiplexing, in part, using a modified enzyme complementation assay, that can be used to screen a library of test compounds and to identify compounds that inhibit denaturation of a target polypeptide of interest.

Abstract: A light source includes a semiconductor light emitter having an electrical drive input and operatively configured to emit a light beam; a first weakly polarizing beam splitter positioned to capture the light beam, reflecting one portion, and transmitting another portion with an output intensity P. The light source includes a second polarizing beam splitter positioned to capture the reflected portion of the light beam and split it into first and second detector light beams of orthogonal polarizations. The light source further includes first and second detectors capturing those detector light beams, and is configured to deliver corresponding first and second output signals from corresponding detector outputs. The light source includes an electronic circuit coupled to those electrical outputs and to the electrical drive input of the light emitter.

Abstract: An array reflector comprising a waveguide and a high reflectivity mirror is disclosed. The waveguide has an input end and a reflective end. The high reflectivity mirror is disposed at the reflective end. The array reflector also includes n?1 mirrors arrayed along the length of the waveguide, wherein n is an integer greater than two.

Abstract: A light source includes a semiconductor light emitter having an electrical drive input and operatively configured to emit a light beam; a first weakly polarizing beam splitter positioned to capture the light beam, reflecting one portion, and transmitting another portion with an output intensity P. The light source includes a second polarizing beam splitter positioned to capture the reflected portion of the light beam and split it into first and second detector light beams of orthogonal polarizations. The light source further includes first and second detectors capturing those detector light beams, and is configured to deliver corresponding first and second output signals from corresponding detector outputs. The light source includes an electronic circuit coupled to those electrical outputs and to the electrical drive input of the light emitter.

Abstract: Embodiments generally relate to an optical waveguide component configured for operation with amplitude modulated optical signals at a line rate. The optical waveguide component includes a first optical waveguide segment having a first port and a second port; and a plurality of second optical waveguides each forming a closed loop. Each of the second optical waveguides is electromagnetically coupled to the first optical waveguide exactly once, and each of the closed loops has a round trip time. A product of the line rate and each of the round-trip times is equal to or greater than unity.

Abstract: Embodiments generally relate to a light source and methods for minimizing temperature sensitivity of a light source light source. In one embodiment a light source includes a light-emitting diode, a light beam having an optical axis, a photodetector and a polarizer. The diode is operatively configured to emit the light beam. The beam splitter, positioned to intercept the light beam, includes a first optical surface operatively configured to reflect a first portion of the light beam and to transmit a second portion of the light beam therethrough. The photodetector is positioned to capture the first portion of the light beam after reflection by the beam splitter and operatively configured to generate photocurrent proportional to an intensity of that captured first portion. The polarizer is positioned between the diode and the beam splitter, and is operatively configured to polarize the light beam along a polarization direction perpendicular to its optical axis.

Abstract: Embodiments generally relate to an optical waveguide component configured for operation with amplitude modulated optical signals at a line rate. The optical waveguide component includes a first optical waveguide segment having a first port and a second port; and a plurality of second optical waveguides each forming a closed loop. Each of the second optical waveguides is electromagnetically coupled to the first optical waveguide exactly once, and each of the closed loops has a round trip time. A product of the line rate and each of the round-trip times is equal to or greater than unity.

Abstract: An array reflector comprising a waveguide and a high reflectivity mirror is disclosed. The waveguide has an input end and a reflective end. The high reflectivity mirror is disposed at the reflective end. The array reflector also includes n?1 mirrors arrayed along the length of the waveguide, wherein n is an integer greater than two.

Abstract: An array reflector comprising a waveguide and a high reflectivity mirror is disclosed. The waveguide has an input end and a reflective end. The high reflectivity mirror is disposed at the reflective end. The array reflector also includes n?1 mirrors arrayed along the length of the waveguide, wherein n is an integer greater than two.

Abstract: Embodiments generally relate to a light source and methods for minimizing temperature sensitivity of a light source light source. In one embodiment a light source includes a light-emitting diode, a light beam having an optical axis, a photodetector and a polarizer. The diode is operatively configured to emit the light beam. The beam splitter, positioned to intercept the light beam, includes a first optical surface operatively configured to reflect a first portion of the light beam and to transmit a second portion of the light beam therethrough. The photodetector is positioned to capture the first portion of the light beam after reflection by the beam splitter and operatively configured to generate photocurrent proportional to an intensity of that captured first portion. The polarizer is positioned between the diode and the beam splitter, and is operatively configured to polarize the light beam along a polarization direction perpendicular to its optical axis.

Abstract: A light source system and method that generates stable optical power over time and temperature for use in laser scanning, turbidity sensing, airborne-particle analysis, fog and visibility monitoring, blood-gas analysis and applications where light source output intensity changes less than one-half percent over a 50° C. range. The system includes a miniature semiconductor light emitter that can be powered by two AAA alkaline batteries for more than 100 hours and is about 1 cm3 in size (TO-5 package). A semiconductor light emitter emits a beam of linearly polarized light through a coated optical element having first and second surfaces that meet at an acute angle, the first surface reflecting a portion of the light to a control system and transmitting the rest through the second surface in a direction normal to it and thereby enabling immunity to light interference in the reflected and transmitted beams and novel, error-canceling properties.

Abstract: A light source system and method that generates stable optical power over time and temperature for use in laser scanning, turbidity sensing, airborne-particle analysis, fog and visibility monitoring, blood-gas analysis and applications where light source output intensity changes less than one-half percent over a 50° C. range. The system includes a miniature semiconductor light emitter that can be powered by two AAA alkaline batteries for more than 100 hours and is about 1 cm3 in size (TO-5 package). A semiconductor light emitter emits a beam of linearly polarized light through a coated optical element having first and second surfaces that meet at an acute angle, the first surface reflecting a portion of the light to a control system and transmitting the rest through the second surface in a direction normal to it and thereby enabling immunity to light interference in the reflected and transmitted beams and novel, error-canceling properties.

Abstract: A short-wavelength vertical cavity surface emitting laser (VCSEL) is flip-chip bonded to a long-wavelength VCSEL. The short-wavelength VCSEL is used to optically-pump the long-wavelength VCSEL. Certain embodiments of the invention can serve as optical sources for optical fiber communication systems. Methods also are provided.

Abstract: A short-wavelength vertical cavity surface emitting laser (VCSEL) is flip-chip bonded to a long-wavelength VCSEL. The short-wavelength VCSEL is used to optically-pump the long-wavelength VCSEL. Certain embodiments of the invention can serve as optical sources for optical fiber communication systems. Methods also are provided.

Abstract: Buried layers are formed within a semiconductor. Metallic or insulating buried layers are produced several microns within a semiconductor substrate. The buried layer can confine current to the buried layer itself by using a conductive material to create the buried layer. The buried layer can also confine current to a specified area of the semiconductor, by using an insulating material inside of the buried layer or by leaving a created void within the material. The buried layer is useful in the construction of a semiconductor Vertical Cavity Laser (VCL). A buried isolation layer confines the current to a narrow active region increasing efficiency of the VCL. The buried layer is also useful in fabricating discrete devices, such as diodes, transistors, and photodetectors, as well as fabricating integrated circuits.

Abstract: Buried layers are formed within a semiconductor. Metallic or insulating buried layers are produced several microns within a semiconductor substrate. The buried layer can confine current to the buried layer itself by using a conductive material to create the buried layer. The buried layer can also confine current to a specified area of the semiconductor, by using an insulating material inside of the buried layer or by leaving a created void within the material. The buried layer is useful in the construction of a semiconductor Vertical Cavity Laser (VCL). A buried isolation layer confines the current to a narrow active region increasing efficiency of the VCL. The buried layer is also useful in fabricating discrete devices, such as diodes, transistors, and photodetectors, as well as fabricating integrated circuits.