Abstract: A method of transferring light-emitting diodes (LEDs) may include: placing a backplane on a backing board, wherein a sealing member is located around a periphery of the backplane; placing a plurality of first LED coupons on the backplane; placing a transparent panel on the sealing member and over the plurality of first LED coupons, such that a space is formed between the backing board and the transparent panel; drawing a vacuum on the space such that the transparent panel presses the plurality of first LED coupons toward the backplane; and directing laser radiation through the transparent panel to irradiate the plurality of first LED coupons located on the backplane.

Abstract: An apparatus for transferring light-emitting diodes (LEDs) includes a backing board for supporting a backplane, a sealing member formed on the backing board around a periphery of the backplane, a transparent panel formed on the sealing member such that a space is formed between the backing board and the transparent panel, and a vacuum source for drawing a vacuum on the space.

Abstract: A circular microLED with a p portion and an n portion both having circular cross-sections along a common axis. The p portion and the n portion may each have a cylindrical and/or frustoconical shapes. The n portion may have circular cross sections greater than the p portion. The n portion may also have an annular contact. The microLED may be a flip chip microLED, with a p contact within a shell defined by the annular n contact.

Abstract: A multi-chip package may include a system-on-chip (SoC) and an optical IO subassembly on a common substrate. The SoC and the optical IO subassembly may be linked by a die-to-die interface. The optical IO subassembly may include an optical IO IC with microLEDs and/or photodetectors bonded to a surface of the optical IO IC away from the common substrate. An optical window layer may shield optical elements of the optical IO subassembly from damage relating to molding compound related operations during assembly.

Abstract: An optical interconnect may include an optoelectronic IC mounted to a substrate. The optoelectronic IC may have optoelectronic devices, for example microLEDs and/or photodetectors, mounted to a surface of the optoelectronic IC away from the substrate. The optoelectronic IC may have circuitry for driving the microLEDs and/or processing electrical signals from the photodetectors. The optoelectronic IC may be interfaced to a D2D interface chip. The D2D interface chip may be mounted to the optoelectronic IC.

Abstract: A method of forming a light emitting device includes providing a free standing support containing a matrix material including first and second vias, depositing in the first vias a first photocurable quantum dot ink including first quantum dots suspended in a first photocurable polymer, illuminating the first photocurable quantum dot ink with ultraviolet radiation or blue light from first LEDs of an array of LEDs to crosslink the first photocurable polymer material in the first vias, depositing in the second vias a second photocurable quantum dot ink comprising second quantum dots suspended in a second photocurable polymer material, illuminating the second photocurable quantum dot ink with ultraviolet radiation or blue light from second LEDs of the array of LEDs to crosslink the second photocurable polymer material in the second vias, and attaching the free standing support to the array of LEDs after the illuminating.

Abstract: Optoelectronic subassemblies may be bonded to base integrated circuit chips (ICs). The optoelectronic subassemblies may be ICs themselves, with optical emitters and/or photodetectors bonded to those ICs. In some embodiments active sides of the OE ICs may be bonded to active sides of the base ICs. In some embodiments non-active sides of the OE ICs may be bonded to active sides of the base ICs. In some embodiments active sides of the OE ICs may be bonded to non-active sides of the base ICs. And in some embodiments non-active sides of the OE ICs may be bonded to non-active sides of the base ICs.

Abstract: A light-emitting device includes a backplane, light-emitting diodes (LEDs) located over a front side of the backplane, and microlenses respectively disposed over the LEDs. Each microlens includes a back surface having a first surface area and configured to receive light emitted from a corresponding LED, an opposing front surface having a second surface area and configured to emit the received light, and at least one sidewall extending from the front surface to the back surface. The second surface area is greater than the first surface area.

Abstract: An apparatus for transferring light-emitting diodes (LEDs) includes a backing board for supporting a backplane, a sealing member formed on the backing board around a periphery of the backplane, a transparent panel formed on the sealing member such that a space is formed between the backing board and the transparent panel, and a vacuum source for drawing a vacuum on the space.

Abstract: A light-emitting device includes a backplane, light-emitting diodes (LEDs) located over a front side of the backplane, and microlenses respectively disposed over the LEDs. Each microlens includes a back surface having a first surface area and configured to receive light emitted from a corresponding LED, an opposing front surface having a second surface area and configured to emit the received light, and at least one sidewall extending from the front surface to the back surface. The second surface area is greater than the first surface area.

Abstract: A method of forming a 3D crack-stop structure in, through, and wrapped around the edges of a substrate to prevent through-substrate cracks from propagating and breaking the substrate and the resulting device are provided. Embodiments include providing a substrate including one or more dies; forming a continuous first trench near an outer edge of the substrate; forming a continuous second trench parallel to and on an opposite side of the first trench from the outer edge; forming a continuous row of vias parallel to and on an opposite side of the second trench from the first trench, forming a continuous third trench parallel to and near an outer edge of each of the dies; forming a protective layer wrapping around the outer edge of the substrate and over and filling the trenches and vias; and patterning active areas of the substrate between the vias and the third trench.

Abstract: A method of forming a 3D crack-stop structure in, through, and wrapped around the edges of a substrate to prevent through-substrate cracks from propagating and breaking the substrate and the resulting device are provided. Embodiments include providing a substrate including one or more dies; forming a continuous first trench near an outer edge of the substrate; forming a continuous second trench parallel to and on an opposite side of the first trench from the outer edge; forming a continuous row of vias parallel to and on an opposite side of the second trench from the first trench, forming a continuous third trench parallel to and near an outer edge of each of the dies; forming a protective layer wrapping around the outer edge of the substrate and over and filling the trenches and vias; and patterning active areas of the substrate between the vias and the third trench.

Abstract: A method of forming a 3D crack-stop structure in, through, and wrapped around the edges of a substrate to prevent through-substrate cracks from propagating and breaking the substrate and the resulting device are provided. Embodiments include providing a substrate including one or more dies; forming a continuous first trench near an outer edge of the substrate; forming a continuous second trench parallel to and on an opposite side of the first trench from the outer edge; forming a continuous row of vias parallel to and on an opposite side of the second trench from the first trench, forming a continuous third trench parallel to and near an outer edge of each of the dies; forming a protective layer wrapping around the outer edge of the substrate and over and filling the trenches and vias; and patterning active areas of the substrate between the vias and the third trench.

Abstract: A group III nitride-based high electron mobility transistor (HEMT) is disclosed. The group III nitride-based high electron mobility transistor (HEMT) comprises sequentially a substrate, a GaN buffer layer, a GaN channel layer, a AlN spacer layer, a barrier layer, a GaN cap layer, and a delta doped layer inserted between the AlN spacer layer and the barrier layer. The HEMT structure of the present invention can improve the electron mobility and concentration of the two-dimensional electron gas, while keeping a low contact resistance.