Abstract: A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with one of erbium or yttrium at an atomic percentage of greater than three for improving piezoelectric properties of the piezoelectric layer.

Abstract: A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with multiple rare earth elements for improving piezoelectric properties of the piezoelectric layer.

Abstract: A method is provided for depositing a thin film of material on a substrate. The method includes providing the substrate on a cathode and a target on an anode in a reaction chamber of a magnetron sputtering device, generating a magnetic field using an enhanced magnetron including an upper base plate to generate an upper magnetic field having a field strength of about 205 gauss and a lower base plate to generate a lower magnetic field having a field strength of about ?215 gauss to about ?370 gauss, injecting sputtering gas at low pressure into the reaction chamber, and applying power across the anode and cathode to create plasma. Ions from the plasma sputter atoms of at least one element from the target, which are deposited on the substrate to form the thin film. Power density of the power is in a range of about 20 W/cm2 to about 60 W/cm2.

Abstract: A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with multiple rare earth elements for improving piezoelectric properties of the piezoelectric layer.

Abstract: A bulk acoustic wave (BAW) resonator structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode and a second electrode disposed over the first piezoelectric layer. The piezoelectric layer is formed of a piezoelectric material doped with one of erbium or yittrium at an atomic percentage of greater than three for improving piezoelectric properties of the piezoelectric layer.