Patents by Inventor Ivan Jevtic

Ivan Jevtic has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RF SWITCH WITH COMPENSATION AND GATE BOOTSTRAPPING
    Publication number: 20240154610
    Abstract: A radio frequency switch device includes a first transistor and a second transistor; a compensation network coupled between a body terminal of the first transistor and a source/drain terminal of the second transistor; and a bootstrapping network having a first terminal coupled to a first bias terminal, a second terminal coupled to a gate terminal of the first transistor, and a third terminal coupled to the body terminal of the first transistor, wherein the bootstrapping network establishes a low impedance path between the gate terminal and the body terminal of the first transistor in response to a first voltage value of the first bias terminal, and wherein the bootstrapping network establishes a high impedance path between the gate terminal and the body terminal of the first transistor in response to a second voltage value of the first bias terminal.
    Type: Application
    Filed: January 8, 2024
    Publication date: May 9, 2024
    Inventors: Semen Syroiezhin, Valentyn Solomko, Ivan Jevtic
  • RF switch with compensation and gate bootstrapping
    Patent number: 11916546
    Abstract: A radio frequency switch device includes a first transistor and a second transistor; a compensation network coupled between a body terminal of the first transistor and a source/drain terminal of the second transistor; and a bootstrapping network having a first terminal coupled to a first bias terminal, a second terminal coupled to a gate terminal of the first transistor, and a third terminal coupled to the body terminal of the first transistor, wherein the bootstrapping network establishes a low impedance path between the gate terminal and the body terminal of the first transistor in response to a first voltage value of the first bias terminal, and wherein the bootstrapping network establishes a high impedance path between the gate terminal and the body terminal of the first transistor in response to a second voltage value of the first bias terminal.
    Type: Grant
    Filed: February 25, 2021
    Date of Patent: February 27, 2024
    Assignee: Infineon Technologies AG
    Inventors: Semen Syroiezhin, Ivan Jevtic, Valentyn Solomko
  • RF Switch with Compensation and Gate Bootstrapping
    Publication number: 20220271746
    Abstract: A radio frequency switch device includes a first transistor and a second transistor; a compensation network coupled between a body terminal of the first transistor and a source/drain terminal of the second transistor; and a bootstrapping network having a first terminal coupled to a first bias terminal, a second terminal coupled to a gate terminal of the first transistor, and a third terminal coupled to the body terminal of the first transistor, wherein the bootstrapping network establishes a low impedance path between the gate terminal and the body terminal of the first transistor in response to a first voltage value of the first bias terminal, and wherein the bootstrapping network establishes a high impedance path between the gate terminal and the body terminal of the first transistor in response to a second voltage value of the first bias terminal.
    Type: Application
    Filed: February 25, 2021
    Publication date: August 25, 2022
    Inventors: Semen Syroiezhin, Ivan Jevtic, Valentyn Solomko